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    • 3. 发明申请
    • PHARMACEUTICAL COMPOSITIONS
    • 药物组合物
    • US20160331751A1
    • 2016-11-17
    • US15106886
    • 2014-12-19
    • Stephane FerrettiSebastien JeayEnsar HalilovicFang LiHui-Qin Wang
    • Stephane FerrettiSebastien JeayEnsar HalilovicFang LiHui-Qin Wang
    • A61K31/519A61K31/506A61K31/496
    • A61K31/519A61K31/4188A61K31/496A61K31/505A61K31/506A61K2300/00
    • The disclosure relates to a pharmaceutical combination of a mdm2/4 inhibitor, namely (S)-1-(4-Chloro-phenyl)-7-isopropoxy-6-methoxy-2-(4-{methyl-[4-(4-methyl-3-oxo-piperazin-1-yl)-trans-cyclohexylmethyl]-amino}-phenyl)-1,4-dihydro-2H-isoquinolin-3-one or (S)-5-(5-Chloro-1-methyl-2-oxo-1,2-dihydro-pyridin-3-yl)-6-(4-chloro-phenyl)-2-(2,4-dimethoxy-pyrimidin-5-yl)-1-isopropyl-5,6-dihydro-1H-pyrrolo[3,4-d]imidazol-4-one, and a cyclin dependent kinase 4/6 (CDK4/6) inhibitor 7-Cyclopentyl-2-(5-piperazin-1-yl-pyridin-2-ylamino)-7H-pyrrolo[2,3-d]pyrimidine-6-carboxylic acid dimethylamide. In addition, the disclosure relates to a pharmaceutical combination product. The disclosure also relates to corresponding pharmaceutical formulations, uses and treatment methods comprising said mdm2/4 inhibitor or a cyclin dependent kinase 4/6 (CDK4/6) inhibitor.
    • 本公开涉及mdm2 / 4抑制剂的药物组合,即(S)-1-(4-氯 - 苯基)-7-异丙氧基-6-甲氧基-2-(4- {甲基 - [4-(4 - 甲基-3-氧代 - 哌嗪-1-基) - 反式 - 环己基甲基] - 氨基} - 苯基)-1,4-二氢-2H-异喹啉-3-酮或(S)-5-(5-氯 - -1-甲基-2-氧代-1,2-二氢 - 吡啶-3-基)-6-(4-氯 - 苯基)-2-(2,4-二甲氧基 - 嘧啶-5-基)-1-异丙基 -5,6-二氢-1H-吡咯并[3,4-d]咪唑-4-酮和细胞周期蛋白依赖性激酶4/6(CDK4 / 6)抑制剂7-环戊基-2-(5-哌嗪-1-基) 吡啶-2-基氨基)-7H-吡咯并[2,3-d]嘧啶-6-甲酸二甲基酰胺。 此外,本公开涉及药物组合产品。 本公开还涉及包含所述mdm2 / 4抑制剂或细胞周期蛋白依赖性激酶4/6(CDK4 / 6)抑制剂的相应药物制剂,用途和治疗方法。
    • 7. 发明申请
    • POLARISCOPE STRESS MEASUREMENT TOOL AND METHOD OF USE
    • 极化应力测量工具及其使用方法
    • US20120314202A1
    • 2012-12-13
    • US13571481
    • 2012-08-10
    • Steven DanylukFang Li
    • Steven DanylukFang Li
    • G01B11/16G01J4/00
    • G01B11/168G01L1/241G01L5/0047
    • The present invention provides a tool for and method of using an infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin, multi crystalline silicon wafers including in situ measurement of residual stress for large cast wafers. The shear difference method is used to obtain full stress components by integrating the shear stress map from the boundaries. System ambiguity at the boundaries is resolved completely by introducing a new analytical function. A new anisotropic stress optic law is provided, and stress optic coefficients are calibrated for different crystal grain orientations and stress orientations.
    • 本发明提供了一种使用红外透射技术提取薄多晶硅晶片中的平面内残余应力的全应力分量的工具和方法,包括原位测量大型晶圆的残余应力。 剪切差法用于通过从边界积分剪切应力图来获得全应力分量。 通过引入新的分析功能,完全解决了边界的系统模糊。 提供了新的各向异性应力光学定律,并且针对不同的晶粒取向和应力取向校准了应力光学系数。