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    • 1. 发明授权
    • Organic field-effect transistor and circuit
    • 有机场效应晶体管和电路
    • US08071976B2
    • 2011-12-06
    • US12534402
    • 2009-08-03
    • Qiang HuangTobias CanzlerUlrich DenkerAnsgar WernerKarl LeoKentaro Harada
    • Qiang HuangTobias CanzlerUlrich DenkerAnsgar WernerKarl LeoKentaro Harada
    • H01L51/00
    • H01L51/0562H01L27/283H01L51/002
    • The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
    • 本发明涉及有机场效应晶体管,特别涉及一种有机薄膜场效应晶体管,其包括栅电极,漏电极和源电极,与栅电极接触形成的电介质层,有源层 由与漏电极和源电极接触并被电气未掺杂的有机材料制成的掺杂剂材料层,其包含作为有源层的有机材料的电掺杂剂的掺杂剂材料和边界 表面区域,其中在有源层和掺杂剂材料层之间形成平面接触,其中掺杂剂材料层中类似的电荷载流子,即电子或空穴的迁移率不大于活性层的一半。
    • 3. 发明授权
    • Organic field-effect transistor
    • 有机场效应晶体管
    • US08212241B2
    • 2012-07-03
    • US12534394
    • 2009-08-03
    • Ulrich DenkerTobias CanzlerQiang Huang
    • Ulrich DenkerTobias CanzlerQiang Huang
    • H01L51/10
    • H01L51/0529H01L51/0562
    • The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.
    • 本发明涉及一种具有栅电极,漏电极和源电极的有机场效应晶体管,特别是有机薄层场效应晶体管,有源材料的有源层在操作期间被配置为形成 电路通道,将有源层与栅电极电隔离的介质层,掺杂剂材料层,其分子由两个或多个原子组成的分子掺杂剂材料组成,掺杂剂材料是用于有机材料的电掺杂剂 所述有源层,并且其中所述掺杂剂材料层形成在所述有源层和所述电介质层之间的边界表面区域中,或者形成为与所述边界表面区域相邻。
    • 4. 发明申请
    • Organischer Feldeffekt Transistor
    • 组合器Feldeffekt晶体管
    • US20100051923A1
    • 2010-03-04
    • US12534394
    • 2009-08-03
    • Ulrich DenkerTobias CanzlerQiang Huang
    • Ulrich DenkerTobias CanzlerQiang Huang
    • H01L51/10
    • H01L51/0529H01L51/0562
    • The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.
    • 本发明涉及一种具有栅电极,漏电极和源电极的有机场效应晶体管,特别是有机薄层场效应晶体管,有源材料的有源层在操作期间被配置为形成 电路通道,将有源层与栅电极电隔离的介质层,掺杂剂材料层,其分子由两个或多个原子组成的分子掺杂剂材料组成,掺杂剂材料是用于有机材料的电掺杂剂 所述有源层,并且其中所述掺杂剂材料层形成在所述有源层和所述电介质层之间的边界表面区域中,或者形成为与所述边界表面区域相邻。