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1. 发明申请

US20110281438A1 PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING 有权
标题翻译： PULSED BIAS等离子体处理以控制微波
公开(公告)号：US20110281438A1
公开(公告)日：2011-11-17
申请号：US12744588
申请日：2008-11-18
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/32136
摘要： A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.
摘要翻译：提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。稳态蚀刻气体流过。提供稳态RF功率以从蚀刻气体形成等离子体。在稳态蚀刻气流期间提供脉冲偏压，其中脉冲偏压具有1至10,000Hz之间的频率。使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

2. 发明申请

US20080296736A1 METHOD FOR REDUCING MICROLOADING IN ETCHING HIGH ASPECT RATIO STRUCTURES 有权
标题翻译：用于减少高比例比例结构中微孔的方法
公开(公告)号：US20080296736A1
公开(公告)日：2008-12-04
申请号：US11757950
申请日：2007-06-04
申请人： Qian Fu , Shenjian Liu , Wonchul Lee , Bryan Pu
发明人： Qian Fu , Shenjian Liu , Wonchul Lee , Bryan Pu
IPC分类号： H01B13/00 , H01L21/306 , H01L29/06
CPC分类号： H01L21/32139 , H01L21/32136 , H01L21/32137
摘要： A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.
摘要翻译：提供了一种用于蚀刻导电层中不同宽高比特征的方法。该方法包括：在长宽比依赖沉积物上沉积导电层; 将导电层的纵横比依赖蚀刻蚀刻到导电层中; 并重复沉积和蚀刻至少一次。

3. 发明授权

US08518282B2 Method of controlling etch microloading for a tungsten-containing layer 有权
标题翻译：控制含钨层的蚀刻微负载的方法
公开(公告)号：US08518282B2
公开(公告)日：2013-08-27
申请号：US12744012
申请日：2008-11-13
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01L21/32136 , H01L21/32138
摘要： A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.
摘要翻译：提供了一种用于蚀刻含钨层中不同纵横比的特征的方法。提供了含有钨蚀刻部件和沉积部件的蚀刻气体。由所提供的蚀刻气体形成等离子体。用所提供的等离子体蚀刻用宽而窄的特征图案化的含钨层。

4. 发明授权

US07629255B2 Method for reducing microloading in etching high aspect ratio structures 有权
标题翻译：蚀刻高纵横比结构中减少微载荷的方法
公开(公告)号：US07629255B2
公开(公告)日：2009-12-08
申请号：US11757950
申请日：2007-06-04
申请人： Qian Fu , Shenjian Liu , Wonchul Lee , Bryan Pu
发明人： Qian Fu , Shenjian Liu , Wonchul Lee , Bryan Pu
IPC分类号： H01L21/44
CPC分类号： H01L21/32139 , H01L21/32136 , H01L21/32137
摘要： A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.
摘要翻译：提供了一种用于蚀刻导电层中不同宽高比特征的方法。该方法包括：在长宽比依赖沉积物上沉积导电层; 将导电层的纵横比依赖蚀刻蚀刻到导电层中; 并重复沉积和蚀刻至少一次。

5. 发明授权

US08609546B2 Pulsed bias plasma process to control microloading 有权
标题翻译：脉冲偏压等离子体工艺来控制微载荷
公开(公告)号：US08609546B2
公开(公告)日：2013-12-17
申请号：US12744588
申请日：2008-11-18
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136
摘要： A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.
摘要翻译：提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。稳态蚀刻气体流过。提供稳态RF功率以从蚀刻气体形成等离子体。在稳态蚀刻气流期间提供脉冲偏压，其中脉冲偏压具有1至10,000Hz之间的频率。使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

6. 发明申请

US20110151670A1 METHOD OF CONTROLLING ETCH MICROLOADING FOR A TUNGSTEN-CONTAINING LAYER 有权
标题翻译：控制含金属层的蚀刻微孔的方法
公开(公告)号：US20110151670A1
公开(公告)日：2011-06-23
申请号：US12744012
申请日：2008-11-13
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/32138
摘要： A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.
摘要翻译：提供了一种用于蚀刻含钨层中不同纵横比的特征的方法。提供了含有钨蚀刻部件和沉积部件的蚀刻气体。由所提供的蚀刻气体形成等离子体。用所提供的等离子体蚀刻用宽而窄的特征图案化的含钨层。

7. 发明授权

US08124538B2 Selective etch of high-k dielectric material 有权
标题翻译：高k介电材料的选择性蚀刻
公开(公告)号：US08124538B2
公开(公告)日：2012-02-28
申请号：US12422108
申请日：2009-04-10
申请人： In Deog Bae , Qian Fu , Wonchul Lee , Shenjian Liu
发明人： In Deog Bae , Qian Fu , Wonchul Lee , Shenjian Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： A method for selectively etching a high-k dielectric layer with respect to a polysilicon material is provided. The high-k dielectric layer is partially removed by Ar sputtering, and then the high-k dielectric layer is etched using an etching gas comprising BCl3. The high-k dielectric layer and the polysilicon material may be formed on a substrate. In order to partially remove the high-k dielectric layer, a sputtering gas containing Ar is provided into an etch chamber in which the substrate is placed, a plasma is generated from the sputtering gas, and then the sputtering gas is stopped. In order to etch the high-k dielectric layer, the etching gas is provided into the etch chamber, a plasma is generated from the etching gas, and then the etching gas is stopped.
摘要翻译：提供了一种相对于多晶硅材料选择性地蚀刻高k电介质层的方法。通过Ar溅射部分去除高k电介质层，然后使用包含BCl 3的蚀刻气体蚀刻高k电介质层。高k电介质层和多晶硅材料可以形成在衬底上。为了部分去除高k电介质层，将含有Ar的溅射气体设置在其中放置基板的蚀刻室中，从溅射气体产生等离子体，然后停止溅射气体。为了蚀刻高k电介质层，蚀刻气体被提供到蚀刻室中，从蚀刻气体产生等离子体，然后停止蚀刻气体。

8. 发明申请

US20110104616A1 LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA 有权
标题翻译：线性宽度粗糙度改进与NOBLE气体等离子体
公开(公告)号：US20110104616A1
公开(公告)日：2011-05-05
申请号：US12921753
申请日：2009-02-18
申请人： Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
发明人： Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
IPC分类号： G03F7/20 , C23F1/08
CPC分类号： H01L21/3065 , H01L21/0271 , H01L21/308 , H01L21/3081 , H01L21/31144 , H01L21/67069
摘要： A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.
摘要翻译：用于形成光致抗蚀剂掩模的方法可以包括向具有基底的真空室提供紫外线（UV）产生气体，使产生紫外线的气体离子化以产生UV射线以照射基底，并通过光刻胶将特征蚀刻到基底中面具。

9. 发明授权

US07682979B2 Phase change alloy etch 有权
标题翻译：相变合金蚀刻
公开(公告)号：US07682979B2
公开(公告)日：2010-03-23
申请号：US11479303
申请日：2006-06-29
申请人： Qian Fu , Shenjian Liu , Linda Fung-Ming Lee
发明人： Qian Fu , Shenjian Liu , Linda Fung-Ming Lee
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J2237/3341 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.
摘要翻译：提供了一种形成装置的方法。提供了相变层。通过提供包含含溴化合物的蚀刻气体并从蚀刻气体形成等离子体来蚀刻相变层。相变层是可以被电流加热然后冷却的材料，根据材料的冷却速度而形成非晶材料或结晶材料。此外，无定形材料具有比结晶材料至少几倍的电阻。

10. 发明授权

US08901004B2 Plasma etch method to reduce micro-loading 有权
标题翻译：等离子蚀刻法减少微载荷
公开(公告)号：US08901004B2
公开(公告)日：2014-12-02
申请号：US12840034
申请日：2010-07-20
申请人： Tom Kamp , Qian Fu , I. C. Jang , Linda Braly , Shenjian Liu
发明人： Tom Kamp , Qian Fu , I. C. Jang , Linda Braly , Shenjian Liu
IPC分类号： H01L21/311 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/768 , H01L21/3065
CPC分类号： H01L21/76816 , H01L21/3065
摘要： A method of producing plurality of etched features in an electronic device is disclosed that avoids micro-loading problems thus maintaining more uniform sidewall profiles and more uniform critical dimensions. The method comprises performing a first time-divisional plasma etch process step within a plasma chamber to a first depth of the plurality of etched features, and performing a flash process step to remove any polymers from exposed surfaces of the plurality of etched features without requiring an oxidation step. The flash process step is performed independently of the time-divisional plasma etch step. A second time-divisional plasma etch process step is performed within the plasma chamber to a second depth of the plurality of etched features. The method may be repeated until a desired etch depth is reached.
摘要翻译：公开了一种在电子设备中产生多个蚀刻特征的方法，其避免微加载问题，从而保持更均匀的侧壁轮廓和更均匀的临界尺寸。该方法包括在等离子体室内执行第一时分等离子体蚀刻工艺步骤至多个蚀刻特征的第一深度，以及执行闪光处理步骤以从多个蚀刻特征的暴露表面去除任何聚合物，而不需要氧化步骤。独立于分时等离子体蚀刻步骤执行闪光处理步骤。在等离子体室内执行第二分时等离子体蚀刻工艺步骤到多个蚀刻特征的第二深度。可以重复该方法直到达到期望的蚀刻深度。

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