专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005085946A1 A PHOTON SOURCE 审中-公开
标题翻译：光电源
公开(公告)号：WO2005085946A1
公开(公告)日：2005-09-15
申请号：PCT/AU2005/000296
申请日：2005-03-02
申请人： QUCOR PTY LTD , HUNTINGTON, Shane, T. , PRAWER, Steven , GREENTREE, Andrew, D. , RABEAU, James
发明人： HUNTINGTON, Shane, T. , PRAWER, Steven , GREENTREE, Andrew, D. , RABEAU, James
IPC分类号： G02F1/365
CPC分类号： G02F1/365 , H04L9/0852
摘要： The present invention provides a photon source comprising an optical waveguide and a material having at least one colour centre. The or each colour centre is arranged for photon emission and the material is grown so that the material is bonded to the optical waveguide and in use at least some of the photons emitted by the or each colour centre are guided in the optical waveguide. The present invention also provides a photon source having an optical waveguide incorporating the material which has the at least one colour centre.
摘要翻译：本发明提供一种光源，其包括光波导和具有至少一个色心的材料。该颜色中心或每个颜色中心被布置用于光子发射，并且材料生长使得材料结合到光波导，并且在使用中，由该或每个颜色中心发射的至少一些光子在光波导中被引导。本发明还提供了一种光子源，其具有并入有至少一个颜色中心的材料的光波导。

2. 发明申请

WO2005112087A1 IMPLANTED COUNTED DOPANT IONS 审中-公开
标题翻译：植入计数的离子
公开(公告)号：WO2005112087A1
公开(公告)日：2005-11-24
申请号：PCT/AU2005/000706
申请日：2005-05-18
申请人： QUCOR PTY LTD , ANDRESEN, Soren , DZURAK, Andrew, Steven , GUAJA, Eric , HEARNE, Sean , HOPF, Toby, Felix , JAMIESON, David, Norman , MITIC, Mladen , PRAWER, Steven , YANG, Changyi
发明人： ANDRESEN, Soren , DZURAK, Andrew, Steven , GUAJA, Eric , HEARNE, Sean , HOPF, Toby, Felix , JAMIESON, David, Norman , MITIC, Mladen , PRAWER, Steven , YANG, Changyi
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/66537 , H01L29/66583 , H01L29/7833 , H01L29/785
摘要： This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallised to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.
摘要翻译：本发明涉及一般类型的半导体器件，其包括注入在基本上是本征半导体的衬底（158）的区域中的数量的掺杂剂原子（142）。衬底（158）的一个或多个掺杂表面区域（152）被金属化以形成电极（150），并且将计数的掺杂剂离子（142）注入基本上本征半导体的区域中。

3. 发明申请

WO2012162743A1 AN ELECTRODE AND A FEEDTHROUGH FOR MEDICAL DEVICE APPLICATIONS 审中-公开
标题翻译：一种电极和一种用于医疗设备的应用
公开(公告)号：WO2012162743A1
公开(公告)日：2012-12-06
申请号：PCT/AU2012/000609
申请日：2012-05-31
申请人： THE UNIVERSITY OF MELBOURNE , NATIONAL ICT AUSTRALIA LIMITED , MEFFIN, Hamish , FOX, Kate , GARRETT, David , GANESAN, Kumaravelu , PRAWER, Steven
发明人： MEFFIN, Hamish , FOX, Kate , GARRETT, David , GANESAN, Kumaravelu , PRAWER, Steven
IPC分类号： A61N1/372 , H01M4/00
CPC分类号： A61N1/05 , A61N1/0529 , A61N1/0543 , A61N1/0551 , A61N1/3754 , Y10T29/49165 , Y10T29/49204
摘要： The present disclosure provides an electrode and an feedthrough for an implantable medical device. In one embodiment, the implantable electrode and the implantable feedthrough both comprise electrically insulating diamond material and electrically conductive diamond material that form an interface. Further, the present disclosure provides method for fabricating the implantable electrode and the feedthrough.
摘要翻译：本公开提供了一种用于可植入医疗装置的电极和馈通件。在一个实施例中，可植入电极和可植入馈通两者均包括形成界面的电绝缘金刚石材料和导电金刚石材料。此外，本公开提供了制造可植入电极和馈通的方法。

4. 发明申请

WO2010003179A1 A METHOD OF FABRICATING A MATERIAL 审中-公开
标题翻译：制作材料的方法
公开(公告)号：WO2010003179A1
公开(公告)日：2010-01-14
申请号：PCT/AU2009/000877
申请日：2009-07-07
申请人： THE UNIVERSITY OF MELBOURNE , PRAWER, Steven , AHARONOVICH, Igor
发明人： PRAWER, Steven , AHARONOVICH, Igor
IPC分类号： B05D3/02 , G02F1/015 , G02F1/00 , C23C4/02 , G02F1/21 , G02F2/02 , C23C16/00 , G02F1/225 , C30B25/00 , G02F1/29 , H01L21/225 , C30B29/04 , G02F1/295 , H01L33/00
CPC分类号： C23C16/56 , C23C16/274
摘要： The present disclosure provides a method of fabricating a material. The material comprises first and second material components. The method comprises the steps of providing a source of a first material component. Further, the method comprises providing a substrate comprising a second component material in which a third material component is incorporated in a manner such that a surface of the substrate is at least partially composed of the third material component. The second material component is located in the proximity of the surface of the substrate. The method also comprises fabricating the material on the surface by forming the first material component on the substrate and transporting the second material from the substrate to a location at which the material is fabricated so that the second material component is incorporated into the first material component.
摘要翻译：本公开提供了制造材料的方法。该材料包括第一和第二材料组分。该方法包括提供第一材料成分的源的步骤。此外，所述方法包括提供包括第二成分材料的基材，其中以使得基材的表面至少部分地由第三材料成分组成的方式引入第三材料成分。第二材料组分位于衬底表面附近。该方法还包括通过在衬底上形成第一材料组分并将第二材料从衬底输送到制造材料的位置，使得第二材料组分被结合到第一材料组分中，从而在表面上制造材料。

5. 发明申请

WO2009105815A1 A METHOD OF FABRICATING A SINGLE PHOTON SOURCE 审中-公开
标题翻译：一种制作单光子源的方法
公开(公告)号：WO2009105815A1
公开(公告)日：2009-09-03
申请号：PCT/AU2009/000215
申请日：2009-02-25
申请人： THE UNIVERSITY OF MELBOURNE , TRPKOVSKI, Steven , PRAWER, Steven , SIMPSON, David Allan , AMPEM-LASSEN, Eric , GIBSON, Brant Cameron
发明人： TRPKOVSKI, Steven , PRAWER, Steven , SIMPSON, David Allan , AMPEM-LASSEN, Eric , GIBSON, Brant Cameron
IPC分类号： G02F1/39 , G01N21/63 , G01N21/87
CPC分类号： H04B10/70
摘要： The present disclosure provides a method of fabricating a single photon source. The method comprises the steps of providing a substrate with a visual feature and providing a plurality of particles positioned on the substrate. The particles are positioned in the proximity of the visual feature and include a particle that is arranged for single photon emission in response to a suitable excitation. The method also includes characterising photon emission from the particles to identify the single photon emission and thereby identifying an approximate location of the particle arranged for single photon emission relative to the visual feature. Further, the method includes imaging the visual feature and an area in the proximity of the visual feature and thereby imaging the particle arranged for single photon emission. In addition, the method includes moving the particle arranged for single photon emission to a predetermined position comprising coupling a suitable device to the particle and lifting the particle using the suitable device.
摘要翻译：本公开提供了制造单个光子源的方法。该方法包括以下步骤：提供具有视觉特征的基底并提供定位在基底上的多个颗粒。颗粒位于视觉特征附近，并且包括响应于合适的激发被布置用于单光子发射的颗粒。该方法还包括表征来自颗粒的光子发射以识别单个光子发射，从而识别为相对于视觉特征单光子发射排列的颗粒的近似位置。此外，该方法包括对视觉特征和视觉特征附近的区域进行成像，从而对排列成单光子发射的颗粒进行成像。此外，该方法包括将布置用于单光子发射的颗粒移动到预定位置，包括将合适的装置耦合到颗粒并使用合适的装置提升颗粒。

6. 发明申请

WO2003019635A1 METHOD AND SYSTEM FOR SINGLE ION IMPLANTATION 审中-公开
标题翻译：用于单个植入的方法和系统
公开(公告)号：WO2003019635A1
公开(公告)日：2003-03-06
申请号：PCT/AU2002/001150
申请日：2002-08-27
申请人： UNISEARCH LIMITED , JAMIESON, David, Norman , PRAWER, Steven , DZURAK, Andrew, Steven , CLARK, Robert, Graham , YANG, Changyi
发明人： JAMIESON, David, Norman , PRAWER, Steven , DZURAK, Andrew, Steven , CLARK, Robert, Graham , YANG, Changyi
IPC分类号： H01L21/265
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , G06N99/002 , H01J37/20 , H01J37/244 , H01J37/3171 , H01J37/3174 , H01J2237/08 , H01J2237/20228 , H01J2237/20292 , H01J2237/31703 , H01J2237/31711 , H01J2237/31713 , H01J2237/31755 , H01J2237/31788 , H01L21/265 , H01L21/26513
摘要： A method and system for single ion doping and machining detects the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31 P ions into a semi-conductor substrate for construction of a Kane quantum computer. The method and system particularly relate to the application of a potential (24) across two electrodes (22, 23) on the surface of the substrate (20) to create a field to separate and sweep out electron-hole pairs formed within the substrate (20). A detector (30) is then used to detect transient current in the electrodes, and so determine the arrival of a single ion in the substrate (20).
摘要翻译：用于单离子掺杂和加工的方法和系统检测衬底中单个离子的冲击，穿透和停止。这种检测对于将数量为31个P离子成功地注入到用于构建Kane量子计算机的半导体衬底中是必需的。所述方法和系统特别涉及在衬底（20）的表面上跨越两个电极（22,23）施加电势（24）以形成场以分离和扫除形成在衬底内的电子 - 空穴对（ 20）。然后使用检测器（30）来检测电极中的瞬态电流，并且因此确定单个离子到达衬底（20）中。

7. 发明授权

EP1747579B1 METHOD OF IMPLANTING COUNTED DOPANT IONS 有权转让
标题翻译：计算掺杂离子的方法
公开(公告)号：EP1747579B1
公开(公告)日：2017-07-26
申请号：EP05739900.8
申请日：2005-05-18
申请人： Qucor Pty Ltd
发明人： ANDRESEN, Soren , DZURAK, Andrew, Steven , GUAJA, Eric , HEARNE, Sean , HOPF, Toby, Felix , JAMIESON, David, Norman , MITIC, Mladen , PRAWER, Steven , YANG, Changyi
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/66537 , H01L29/66583 , H01L29/7833 , H01L29/785
摘要： This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallized to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.
摘要翻译：本发明涉及一般类型的半导体器件，其包括注入基本上为本征半导体的衬底（158）的区域中的计数数量的掺杂剂原子（142）。对衬底（158）的一个或多个掺杂表面区域（152）进行金属化以形成电极（150），并将计数数量的掺杂剂离子（142）注入到基本上本征的半导体的区域中。

8. 发明授权

EP1421608B1 METHOD AND SYSTEM FOR SINGLE ION IMPLANTATION 有权
标题翻译：方法和系统单离子注入
公开(公告)号：EP1421608B1
公开(公告)日：2016-09-21
申请号：EP02753938.6
申请日：2002-08-27
申请人： Qucor Pty Ltd
发明人： JAMIESON, David, Norman , PRAWER, Steven , DZURAK, Andrew, Steven , CLARK, Robert, Graham , YANG, Changyi
IPC分类号： H01J37/317 , H01J37/08 , H01J37/244 , H01J37/20 , H01L21/265 , H01L31/115 , B82B3/00 , G01T1/00
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , G06N99/002 , H01J37/20 , H01J37/244 , H01J37/3171 , H01J37/3174 , H01J2237/08 , H01J2237/20228 , H01J2237/20292 , H01J2237/31703 , H01J2237/31711 , H01J2237/31713 , H01J2237/31755 , H01J2237/31788 , H01L21/265 , H01L21/26513

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式