会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • System and method for dynamically adjusting memory rail voltage
    • 动态调整内存轨电压的系统和方法
    • US09299419B1
    • 2016-03-29
    • US14611482
    • 2015-02-02
    • QUALCOMM Incorporated
    • Harmander SinghMilena VratonjicIan David O'DonnellKenneth Gainey
    • G11C5/14G11C11/00G11C11/417G11C5/00
    • G11C11/417G11C5/005G11C5/14G11C5/147
    • Systems and methods for optimizing a memory rail voltage are disclosed. The system may comprise a plurality of sensor cells, each sensor cell comprising at least one bitcell replica having a predefined data retention voltage higher than a data retention voltage of a similar memory bit cell. The sensor cells may be configured to provide an output based on a sensor rail voltage higher than the predefined data retention voltage. The system may further comprise a controller operably coupled to a power management circuit and configured to adjust the memory rail and the sensor rail voltages. The controller may be further configured to compare an expected value to the sensor indication. The controller may decrease the sensor rail voltage and the memory rail voltage based on the indication until a sensor indicates a bitcell replica has failed, indicating an optimum memory rail voltage has been reached.
    • 公开了用于优化存储器轨电压的系统和方法。 该系统可以包括多个传感器单元,每个传感器单元包括至少一个比特单元复制品,其具有高于类似存储器位单元的数据保持电压的预定数据保持电压。 传感器单元可以被配置为基于高于预定数据保持电压的传感器轨道电压来提供输出。 系统还可以包括可操作地耦合到功率管理电路并被配置为调整存储器轨和传感器轨电压的控制器。 控制器还可以被配置为将预期值与传感器指示进行比较。 控制器可以基于指示降低传感器轨电压和存储器轨电压,直到传感器指示位单元副本已经失败,表明已经达到最佳存储器轨电压。