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1. 发明申请

WO2014078742A2 ADJUSTABLE GAIN FOR MULTI-STACKED AMPLIFIERS 审中-公开
标题翻译：可调增益用于多层放大器
公开(公告)号：WO2014078742A2
公开(公告)日：2014-05-22
申请号：PCT/US2013/070434
申请日：2013-11-15
申请人： QUALCOMM INCORPORATED
发明人： CHA, Jeongwon , LEE, Chang-Ho , HADJICHRISTOS, Aristotele
IPC分类号： H03F1/02
CPC分类号： H03F1/0277 , H03F1/223 , H03F1/523 , H03F3/211 , H03F3/245 , H03F2200/61 , H03K17/102
摘要： Techniques for providing adjustable gain in an amplifier. In an aspect, a composite amplifier having adjustable gain includes a plurality of amplifiers coupled in parallel, wherein each of the amplifiers may be turned on or off to adjust the overall gain of the composite amplifier. Each amplifier may include an input transistor and at least two cascode transistors. To turn each amplifier off, the gate voltage of a second or lowermost cascode transistor coupled to the input transistor may be grounded, and the gate voltage of a first cascode transistor coupled to the output voltage may be coupled to a first turn-off voltage to reduce the drain-to-gate voltage drop across the first cascode transistor. Further aspects provide for decoupling a capacitor coupled to the gates of the cascode transistors from AC ground when the amplifier is turned off.
摘要翻译：
在放大器中提供可调增益的技术。一方面，具有可调节增益的复合放大器包括并联耦合的多个放大器，其中每个放大器可以被开启或关闭以调节复合放大器的整体增益。每个放大器可以包括输入晶体管和至少两个共源共栅晶体管。为了关闭每个放大器，耦合到输入晶体管的第二或最低级联晶体管的栅极电压可以接地，并且耦合到输出电压的第一级联晶体管的栅极电压可以耦合到第一关断电压以降低第一共源共栅晶体管两端的漏极至栅极压降。进一步的方面提供了当放大器关闭时将耦合到共源共栅晶体管的栅极的电容器与交流地断开。

2. 发明申请

WO2014031787A1 HIGH POWER TUNABLE CAPACITOR 审中-公开
标题翻译：高功率电容电容器
公开(公告)号：WO2014031787A1
公开(公告)日：2014-02-27
申请号：PCT/US2013/056056
申请日：2013-08-21
申请人： QUALCOMM INCORPORATED
发明人： AHN, Minsik , AN, Kyu Hwan , LEE, Chang-Ho , HADJICHRISTOS, Aristotele
IPC分类号： H03K17/56 , H03H7/48
CPC分类号： H03H7/0153 , H03F2200/378 , H03F2200/387 , H03H7/01 , H03H7/48 , H03K17/102 , H03K17/56
摘要： A high power tunable capacitor (500) is disclosed. In an exemplary embodiment, an apparatus includes a capacitor (508) coupled to an input signal (504), a body contacted switch (510) coupled to the capacitor, the body contacted switch coupled to a body bias signal (Bb), and a floating body switch (512) coupled between the body contacted switch and a ground, the floating body switch configured to decouple the body bias signal from the ground.
摘要翻译：公开了一种高功率可调电容器（500）。在一个示例性实施例中，装置包括耦合到输入信号（504）的电容器（508），耦合到电容器的身体接触开关（510），耦合到体偏置信号（Bb）的身体接触开关，以及浮体开关（512），其联接在身体接触开关和地面之间，浮体开关被配置为将身体偏置信号与地面分离。

3. 发明授权

EP2936679B1 MULTI-MODE MULTI-BAND POWER AMPLIFIERS 有权
公开(公告)号：EP2936679B1
公开(公告)日：2018-10-17
申请号：EP13821320.2
申请日：2013-12-19
申请人： Qualcomm Incorporated
发明人： LEE, Chang-Ho , KIM, Woonyun , AHN, Minsik , CHA, Jeongwon , PARK, Yunseo , HADJICHRISTOS, Aristotele
IPC分类号： H04B1/04 , H03H7/38 , H03F3/72 , H03F1/02
CPC分类号： H04B1/0458 , H03F1/0277 , H03F3/72 , H03F2203/7239 , H03H7/38 , H04B1/0483
摘要： Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.

4. 发明申请

WO2021066981A1 PACKAGE COMPRISING A SOLDER RESIST LAYER CONFIGURED AS A SEATING PLANE FOR A DEVICE 审中-公开
公开(公告)号：WO2021066981A1
公开(公告)日：2021-04-08
申请号：PCT/US2020/048864
申请日：2020-09-01
申请人： QUALCOMM INCORPORATED
发明人： GARCIA, Daniel , MENGISTIE, Kinfegebriel Amera , CARRARA, Francesco , LEE, Chang-Ho , ALAWANI, Ashish , KUHLMAN, Mark , LEE, John Jong-Hoon , KIM, Jeongkeun , YU, Xiaoju , NIRAMARNKARN, Supatta
IPC分类号： H01L23/498 , H01L23/552 , H01L23/00 , H01L23/31
摘要： A package that includes a substrate having a first surface; a solder resist layer coupled to the first surface of the substrate; a device located over the solder resist layer such that a portion of the device touches the solder resist layer; and an encapsulation layer located over the solder resist layer such that the encapsulation layer encapsulates the device. The solder resist layer is configured as a seating plane for the device. The device is located over the solder resist layer such that a surface of the device facing the substrate is approximately parallel to the first surface of the substrate. The solder resist layer includes at least one notch. The device is located over the solder resist layer such that at least one corner of the device touches the at least one notch.

5. 发明申请

WO2017131933A1 ADAPTIVE BIAS CIRCUIT FOR A RADIO FREQUENCY (RF) AMPLIFIER 审中-公开
标题翻译：适用于射频（RF）放大器的自适应偏置电路
公开(公告)号：WO2017131933A1
公开(公告)日：2017-08-03
申请号：PCT/US2017/012237
申请日：2017-01-05
申请人： QUALCOMM INCORPORATED
发明人： KIM, Woonyun , LEE, Chang-Ho , AHN, Minsik , CHA, Jeongwon
IPC分类号： H03F1/02 , H03F3/193 , H03F3/24 , H03F3/45
CPC分类号： H03F3/45179 , H03F1/0266 , H03F3/193 , H03F3/245 , H03F3/45188 , H03F2200/165 , H03F2200/168 , H03F2200/18 , H03F2200/294 , H03F2200/336 , H03F2200/451 , H03F2203/45244
摘要： A circuit (550) includes a first transistor (534) comprising a gate, a source, and a drain, and an inductor (535) coupled between the gate and the source of the first transistor (534), wherein the source is further coupled to a current source (520) and the gate is further coupled to an amplifier (550).
摘要翻译：一种电路（550）包括：第一晶体管（534），其包括栅极，源极和漏极;以及电感器（535），其耦合在第一晶体管（534）的栅极和源极之间），其中所述源进一步耦合到电流源（520）并且所述栅极进一步耦合到放大器（550）。

6. 发明申请

WO2014026158A1 MULTI-THROW ANTENNA SWITCH WITH OFF-STATE CAPACITANCE REDUCTION 审中-公开
标题翻译：多级天线开关，具有不同的电容减少功能
公开(公告)号：WO2014026158A1
公开(公告)日：2014-02-13
申请号：PCT/US2013/054416
申请日：2013-08-09
申请人： QUALCOMM INCORPORATED
发明人： AHN, Minsik , LEE, Chang-Ho , HADJICHRISTOS, Aristotele
IPC分类号： H04B1/00 , H04B1/40
CPC分类号： H01Q1/50 , H04B1/006 , H04B1/406
摘要： A multi-throw antenna switch with off-state capacitance reduction is disclosed. In an exemplary embodiment, an apparatus is provided that includes a plurality of first stage switches connected to an antenna, and a plurality of second stage switches connected to the plurality of first stage switches, each first stage switch connected in series to one or more second stage switches to form a plurality of switchable signal paths connected to the antenna.
摘要翻译：公开了一种具有关闭状态电容降低的多掷天线开关。在示例性实施例中，提供了一种装置，其包括连接到天线的多个第一级开关和连接到多个第一级开关的多个第二级开关，每个第一级开关串联连接到一个或多个第二级开关级开关以形成连接到天线的多个可切换信号路径。

7. 发明公开

EP2974002A1 ADAPATIVE POWER AMPLIFIER 审中-公开
标题翻译：自适应功率转换器
公开(公告)号：EP2974002A1
公开(公告)日：2016-01-20
申请号：EP14718811.4
申请日：2014-03-10
申请人： QUALCOMM Incorporated
发明人： CHA, Jeongwon , LEE, Chang-Ho , KIM, Woonyun , HADJICHRISTOS, Aristotele , ZHAO, Yu
IPC分类号： H03F1/02 , H03F1/22 , H03F3/24 , H03F1/32 , H03F3/217
CPC分类号： H03F3/193 , H03F1/0211 , H03F1/0261 , H03F1/22 , H03F1/223 , H03F1/3205 , H03F3/21 , H03F3/2171 , H03F3/245 , H03F2200/18 , H03F2200/61
摘要： Exemplary embodiments are related to an envelope-tracking power amplifier (310). A device may include a first transistor (MN) of a plurality of transistors in a stacked configuration configured to receive a supply voltage (VDD) varying with an envelope of a radio- frequency (RF) input signal. The device may further include a second transistor (Ml) of the plurality in the stacked configuration coupled to a reference voltage and configured to receive a dynamic bias voltage (VG1) varying inversely proportional to the supply voltage (VDD).

8. 发明公开

EP2920878A2 ADJUSTABLE GAIN FOR MULTI-STACKED AMPLIFIERS 审中-公开
标题翻译：可调增益多堆BOOSTER
公开(公告)号：EP2920878A2
公开(公告)日：2015-09-23
申请号：EP13799450.5
申请日：2013-11-15
申请人： Qualcomm Incorporated
发明人： CHA, Jeongwon , LEE, Chang-Ho , HADJICHRISTOS, Aristotele
IPC分类号： H03F1/02 , H03F1/22 , H03F1/52 , H03F3/21 , H03K17/10
CPC分类号： H03F1/0277 , H03F1/223 , H03F1/523 , H03F3/211 , H03F3/245 , H03F2200/61 , H03K17/102
摘要： Techniques for providing adjustable gain in an amplifier. In an aspect, a composite amplifier having adjustable gain includes a plurality of amplifiers coupled in parallel, wherein each of the amplifiers may be turned on or off to adjust the overall gain of the composite amplifier. Each amplifier may include an input transistor and at least two cascode transistors. To turn each amplifier off, the gate voltage of a second or lowermost cascode transistor coupled to the input transistor may be grounded, and the gate voltage of a first cascode transistor coupled to the output voltage may be coupled to a first turn-off voltage to reduce the drain-to-gate voltage drop across the first cascode transistor. Further aspects provide for decoupling a capacitor coupled to the gates of the cascode transistors from AC ground when the amplifier is turned off.

9. 发明公开

EP2888816A1 HIGH POWER TUNABLE CAPACITOR 有权
标题翻译：可调节高性能电容器
公开(公告)号：EP2888816A1
公开(公告)日：2015-07-01
申请号：EP13753991.2
申请日：2013-08-21
申请人： Qualcomm Incorporated
发明人： AHN, Minsik , AN, Kyu Hwan , LEE, Chang-Ho , HADJICHRISTOS, Aristotele
IPC分类号： H03K17/56 , H03H7/48
摘要： A high power tunable capacitor is disclosed. In an exemplary embodiment, an apparatus includes a capacitor coupled to an input signal, a body contacted switch coupled to the capacitor, the body contacted switch coupled to a body bias signal, and a floating body switch coupled between the body contacted switch and a ground, the floating body switch configured to decouple the body bias signal from the ground.

10. 发明申请

WO2014150273A1 ADAPATIVE POWER AMPLIFIER 审中-公开
标题翻译：自适应功率放大器
公开(公告)号：WO2014150273A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022781
申请日：2014-03-10
申请人： QUALCOMM INCORPORATED
发明人： CHA, Jeongwon , LEE, Chang-Ho , KIM, Woonyun , HADJICHRISTOS, Aristotele , ZHAO, Yu
IPC分类号： H03F1/02 , H03F1/22 , H03F3/24 , H03F1/32 , H03F3/217
CPC分类号： H03F3/193 , H03F1/0211 , H03F1/0261 , H03F1/22 , H03F1/223 , H03F1/3205 , H03F3/21 , H03F3/2171 , H03F3/245 , H03F2200/18 , H03F2200/61
摘要： Exemplary embodiments are related to an envelope-tracking power amplifier (310). A device may include a first transistor (MN) of a plurality of transistors in a stacked configuration configured to receive a supply voltage (VDD) varying with an envelope of a radio- frequency (RF) input signal. The device may further include a second transistor (Ml) of the plurality in the stacked configuration coupled to a reference voltage and configured to receive a dynamic bias voltage (VG1) varying inversely proportional to the supply voltage (VDD).
摘要翻译：示例性实施例涉及包络跟踪功率放大器（310）。器件可以包括堆叠配置中的多个晶体管的第一晶体管（MN），其被配置为接收随着射频（RF）输入信号的包络而变化的电源电压（VDD）。该器件还可包括多个堆叠配置中的第二晶体管（M1），其耦合到参考电压并被配置为接收与电源电压（VDD）成反比变化的动态偏置电压（VG1）。

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