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1. 发明申请

WO2013142782A2 LOW GM TRANSCONDUCTOR 审中-公开
标题翻译：低通GM TRANSCONDUCTOR
公开(公告)号：WO2013142782A2
公开(公告)日：2013-09-26
申请号：PCT/US2013/033482
申请日：2013-03-22
申请人： QUALCOMM INCORPORATED
发明人： MEHRABI, Arash , DEYERLE, IV, Thurman, S. , MIAO, Guoqing
IPC分类号： G05F1/56 , H03F3/45
CPC分类号： H03F3/45
摘要： Techniques for designing a transconductor configurable to have a low transconductance. In one aspect, a voltage to current conversion module is coupled to a 1:N current replication module. The voltage to current conversion module may be implemented as an operational amplifier configured with negative feedback to generate a current through a transistor, wherein such current is proportional to the difference between an input voltage and a common-mode reference. The 1:N current replication module is configured to mirror the generated current in another transistor, to a predetermined ratio, such that the output current is also proportional to the difference between the input voltage and the common-mode reference. In exemplary embodiments, the output stage driving the output current may be configured to operate as a Class A, Class B, or Class AB type amplifier.
摘要翻译：用于设计跨导体的技术，可配置为具有低跨导。在一个方面，电压到电流转换模块耦合到1：N电流复制模块。电压到电流转换模块可以被实现为配置有负反馈以产生通过晶体管的电流的运算放大器，其中这种电流与输入电压和共模参考之间的差成比例。 1：N电流复制模块被配置为将另一晶体管中产生的电流镜像到预定比例，使得输出电流也与输入电压和共模参考之间的差成比例。在示例性实施例中，驱动输出电流的输出级可被配置为作为A类，B类或AB类放大器工作。

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