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1. 发明申请

WO2015179172A1 CARRIER AGGREGATION AMPLIFIER WITH DUAL GAIN CONTROL 审中-公开
标题翻译：具有双增益控制的载波聚合放大器
公开(公告)号：WO2015179172A1
公开(公告)日：2015-11-26
申请号：PCT/US2015/030327
申请日：2015-05-12
申请人： QUALCOMM INCORPORATED
发明人： YOUSSEF, Ahmed Abdel Monem , ABDEL GHANY, Ehab Ahmed Sobhy , CHANG, Li-Chung
IPC分类号： H04B1/00 , H03F1/22 , H03G1/00
CPC分类号： H03G3/3036 , H03F1/223 , H03F3/19 , H03F3/193 , H03F3/68 , H03F2200/111 , H03F2200/294 , H03F2200/451 , H03F2200/489 , H03G1/0029 , H04B1/0053
摘要： An apparatus includes a first amplification stage configured to amplify a first carrier signal and a second amplification stage configured to amplify a second carrier signal. The first amplification stage is direct-current (DC) coupled to the second amplification stage. First circuitry is coupled to the first amplification stage and configured to control a first gain of the first amplification stage. The first circuitry includes a first gain control transistor configured to selectively divert a first bleed current from a first output of the first amplification stage. Second circuitry is coupled to the second amplification stage and configured to control a second gain of the second amplification stage independently of the first gain. The second circuitry includes a second gain control transistor configured to selectively divert a second bleed current from a second output of the second amplification stage.
摘要翻译：一种装置包括被配置为放大第一载波信号的第一放大级和被配置为放大第二载波信号的第二放大级。第一放大级是耦合到第二放大级的直流（DC）。第一电路耦合到第一放大级并被配置为控制第一放大级的第一增益。第一电路包括第一增益控制晶体管，其被配置为选择性地转移来自第一放大级的第一输出的第一泄放电流。第二电路耦合到第二放大级并且被配置为独立于第一增益来控制第二放大级的第二增益。第二电路包括第二增益控制晶体管，其被配置为选择性地转移来自第二放大级的第二输出的第二放电电流。

2. 发明申请

WO2015108897A1 INTER CARRIER-AGGREGATION ISOLATION IN A RECEIVER 审中-公开
标题翻译：接收器中的载波间聚合分离
公开(公告)号：WO2015108897A1
公开(公告)日：2015-07-23
申请号：PCT/US2015/011288
申请日：2015-01-14
申请人： QUALCOMM INCORPORATED
发明人： YOUSSEF, Ahmed Abdel Monem , UZUNKOL, Mehmet , XU, Rui , ABDEL GHANY, Ehab Ahmed Sobhy , LEUNG, Wingching Vincent , WOO, Sang Hyun , HE, Allen , CHANG, Li-Chung
IPC分类号： H03F3/195 , H03F3/21 , H03F3/72 , G04B1/00 , H04B1/16 , H04L5/00 , H03F3/68
CPC分类号： H04B1/006 , H03F3/195 , H03F3/211 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/294 , H03F2200/507 , H03F2200/516 , H03F2200/541 , H03F2203/7209 , H03F2203/7227 , H04B1/005 , H04B1/0057 , H04B1/0067 , H04B1/12 , H04B1/1615 , H04L5/001 , H04L5/14
摘要： A device includes a first amplifier circuit coupled to a first transformer and a second transformer, the first transformer selectively coupled to a first shared power distribution network through a first switch, the second transformer selectively coupled to a second shared power distribution network through a second switch.
摘要翻译：一种设备包括耦合到第一变压器和第二变压器的第一放大器电路，第一变压器通过第一开关有选择地耦合到第一共享配电网络，第二变压器通过第二开关选择性地耦合到第二共享配电网络。

3. 发明申请

WO2015148750A1 SINGLE-INPUT MULTIPLE-OUTPUT AMPLIFIERS WITH SIMULTANEOUS MULTIPLE GAIN MODES 审中-公开
标题翻译：单输入多输出放大器同时采用多种增益模式
公开(公告)号：WO2015148750A1
公开(公告)日：2015-10-01
申请号：PCT/US2015/022628
申请日：2015-03-26
申请人： QUALCOMM INCORPORATED
发明人： XU, Rui , HE, Allen , LEUNG, Wingching Vincent , YOUSSEF, Ahmed Abdel Monem , ABDEL GHANY, Ehab Ahmed Sobhy , WOO, Sang Hyun , CHANG, Li-Chung
IPC分类号： H03F3/189 , H03F3/68
CPC分类号： H03F3/193 , H03F1/56 , H03F3/189 , H03F3/68 , H03F2200/222 , H03F2200/42 , H04B1/1607
摘要： A device includes at least one first amplifier circuit configurable to receive and amplify an input radio frequency (RF) signal having a first carrier at a first input signal level and provide a first amplified RF signal, and at least one second amplifier circuit configurable to receive and amplify the input RF signal having a second carrier at a second input signal level and provide a second amplified RF signal, the at least one first amplifier circuit having a first input impedance, the at least one second amplifier circuit having a second input impedance.
摘要翻译：一种装置包括至少一个第一放大器电路，其可配置为接收和放大具有第一输入信号电平的第一载波的输入射频（RF）信号并提供第一放大RF信号，以及至少一个第二放大器电路，并且放大具有第二输入信号电平的第二载波的输入RF信号，并提供第二放大RF信号，所述至少一个第一放大器电路具有第一输入阻抗，所述至少一个第二放大器电路具有第二输入阻抗。

4. 发明申请

WO2015108892A1 AREA-EFFICIENT DEGENERATIVE INDUCTANCE FOR A LOW NOISE AMPLIFIER (LNA) 审中-公开
标题翻译：低噪声放大器（LNA）的有效衰减电感
公开(公告)号：WO2015108892A1
公开(公告)日：2015-07-23
申请号：PCT/US2015/011283
申请日：2015-01-14
申请人： QUALCOMM INCORPORATED
发明人： ABDEL GHANY, Ehab Ahmed Sobhy , WOO, Sang Hyun , LEUNG, Wingching Vincent , JIN, Zhang , CHANG, Li-Chung
IPC分类号： H03F1/26 , H03F3/193 , H03F3/68
CPC分类号： H03G3/3036 , H03F1/26 , H03F3/19 , H03F3/193 , H03F3/68 , H03F2200/294 , H03F2200/372 , H03F2200/451
摘要： A device includes a first and a second low noise amplifier (LNA), a first degenerative inductance coupled between the first LNA and ground by a first ground connection, and a second degenerative inductance coupled between the second LNA and ground by a second ground connection, the first and second degenerative inductances configured to establish negative inductive coupling between the first and second degenerative inductances.
摘要翻译：器件包括第一和第二低噪声放大器（LNA），通过第一接地连接耦合在第一LNA与地之间的第一退化电感，以及通过第二接地连接耦合在第二LNA与地之间的第二退化电感，第一和第二退化电感被配置为在第一和第二退化电感之间建立负电感耦合。

5. 发明申请

WO2015038402A1 ELECTRO-STATIC DISCHARGE PROTECTION FOR INTEGRATED CIRCUITS 审中-公开
标题翻译：集成电路的静电放电保护
公开(公告)号：WO2015038402A1
公开(公告)日：2015-03-19
申请号：PCT/US2014/054104
申请日：2014-09-04
申请人： QUALCOMM INCORPORATED
发明人： YOUSSEF, Ahmed Abdel Monem , GUDEM, Prasad Srinivasa Siva , CHANG, Li-Chung , ABDEL GHANY, Ehab Ahmed Sobhy
IPC分类号： H01L27/02 , H03F1/52 , H02H9/04
CPC分类号： H02H9/046 , H01L27/0255 , H03F1/223 , H03F1/523 , H03F2200/336 , H03F2200/441 , H03F2200/444
摘要： Techniques for improving electro-static discharge (ESD) performance in integrated circuits (IC's). In an aspect, one or more protective diodes are provided between various nodes of the IC. For example, protective diode(s) may be provided between the drain and gate of an amplifier input transistor, and/or between the drain and ground, etc. In certain exemplary embodiments, the amplifier may be a cascode amplifier. Further aspects for effectively dealing with ESD phenomena are described.
摘要翻译：用于提高集成电路（IC）中静电放电（ESD）性能的技术。在一个方面，在IC的各个节点之间提供一个或多个保护二极管。例如，可以在放大器输入晶体管的漏极和栅极之间和/或在漏极和地之间提供保护二极管等。在某些示例性实施例中，放大器可以是共源共栅放大器。描述了有效处理ESD现象的其他方面。

6. 发明公开

EP3367576A1 ROUTING AND SHIELDING OF SIGNAL LINES TO IMPROVE ISOLATION 有权
公开(公告)号：EP3367576A1
公开(公告)日：2018-08-29
申请号：EP18166592.8
申请日：2014-04-01
申请人： Qualcomm Incorporated
发明人： YOUSSEF, Ahmed Abdel Monem , CHANG, Li-Chung , LEUNG, Wingching Vincent , HE, Allen , XU, Rui , ABDEL GHANY, Ehab Ahmed Sobhy
IPC分类号： H04B1/00 , H05K1/02
摘要： Techniques for routing and shielding signal lines to improve isolation between the signal lines are disclosed. In an exemplary design, an apparatus includes first, second, and third signal lines and a switch. The first, second, and third signal lines are configurable to carry first, second, and third signals, respectively. The switch is coupled between the second signal line and AC ground and is closed when the second signal line is not carrying the second signal. The second signal line isolates the first and third signal lines when the switch is closed. Adjacent signal lines are not active at the same time. A signal line may include positive and negative signal lines, which may have at least one cross over in order to cancel coupling between the positive and negative signal lines.

7. 发明公开

EP3146638A1 CARRIER AGGREGATION AMPLIFIER WITH DUAL GAIN CONTROL 有权转让
标题翻译：麻醉品麻醉大师VERSTÄRKUNGSREGELUNGTRÄGERAGGREGATIONSVERSTÄRKERMIT DOPPELTERVERSTÄRKUNGSREGELUNG
公开(公告)号：EP3146638A1
公开(公告)日：2017-03-29
申请号：EP15726786.5
申请日：2015-05-12
申请人： Qualcomm Incorporated
发明人： YOUSSEF, Ahmed Abdel Monem , ABDEL GHANY, Ehab Ahmed Sobhy , CHANG, Li-Chung
IPC分类号： H04B1/00 , H03F1/22 , H03G1/00
CPC分类号： H03G3/3036 , H03F1/223 , H03F3/19 , H03F3/193 , H03F3/68 , H03F2200/111 , H03F2200/294 , H03F2200/451 , H03F2200/489 , H03G1/0029 , H04B1/0053
摘要： An apparatus includes a first amplification stage configured to amplify a first carrier signal and a second amplification stage configured to amplify a second carrier signal. The first amplification stage is direct-current (DC) coupled to the second amplification stage. First circuitry is coupled to the first amplification stage and configured to control a first gain of the first amplification stage. The first circuitry includes a first gain control transistor configured to selectively divert a first bleed current from a first output of the first amplification stage. Second circuitry is coupled to the second amplification stage and configured to control a second gain of the second amplification stage independently of the first gain. The second circuitry includes a second gain control transistor configured to selectively divert a second bleed current from a second output of the second amplification stage.
摘要翻译：一种装置包括被配置为放大第一载波信号的第一放大级和被配置为放大第二载波信号的第二放大级。第一放大级是耦合到第二放大级的直流（DC）。第一电路耦合到第一放大级并且被配置为控制第一放大级的第一增益。第一电路包括第一增益控制晶体管，其被配置为选择性地转移来自第一放大级的第一输出的第一泄放电流。第二电路耦合到第二放大级并且被配置为独立于第一增益来控制第二放大级的第二增益。第二电路包括第二增益控制晶体管，其被配置为选择性地转移来自第二放大级的第二输出的第二放电电流。

8. 发明公开

EP2982041A1 ROUTING AND SHIELDING OF SIGNAL LINES TO IMPROVE ISOLATION 有权
标题翻译：路由和信号线改进的隔离之盾
公开(公告)号：EP2982041A1
公开(公告)日：2016-02-10
申请号：EP14723233.4
申请日：2014-04-01
申请人： Qualcomm Incorporated
发明人： YOUSSEF, Ahmed Abdel Monem , CHANG, Li-Chung , LEUNG, Wingching Vincent , HE, Allen , XU, Rui , ABDEL GHANY, Ehab Ahmed Sobhy
IPC分类号： H04B1/00 , H05K1/02
CPC分类号： H05K1/0228 , H04B1/005 , H04B1/44 , H04B3/02 , H04B7/04 , H05K1/0219 , H05K2201/09245 , Y10T307/74
摘要： Techniques for routing and shielding signal lines to improve isolation between the signal lines are disclosed. In an exemplary design, an apparatus includes first, second, and third signal lines and a switch. The first, second, and third signal lines are configurable to carry first, second, and third signals, respectively. The switch is coupled between the second signal line and AC ground and is closed when the second signal line is not carrying the second signal. The second signal line isolates the first and third signal lines when the switch is closed. Adjacent signal lines are not active at the same time. A signal line may include positive and negative signal lines, which may have at least one cross over in order to cancel coupling between the positive and negative signal lines.

9. 发明授权

EP3044810B1 ELECTRO-STATIC DISCHARGE PROTECTION FOR INTEGRATED CIRCUITS 有权
公开(公告)号：EP3044810B1
公开(公告)日：2020-11-11
申请号：EP14766354.6
申请日：2014-09-04
申请人： Qualcomm Incorporated
发明人： YOUSSEF, Ahmed Abdel Monem , GUDEM, Prasad Srinivasa Siva , CHANG, Li-Chung , ABDEL GHANY, Ehab Ahmed Sobhy
IPC分类号： H01L27/02 , H02H9/04 , H03F1/22 , H03F1/52

10. 发明授权

EP3367576B1 ROUTING AND SHIELDING OF SIGNAL LINES TO IMPROVE ISOLATION 有权
公开(公告)号：EP3367576B1
公开(公告)日：2020-08-26
申请号：EP18166592.8
申请日：2014-04-01
申请人： Qualcomm Incorporated
发明人： YOUSSEF, Ahmed Abdel Monem , CHANG, Li-Chung , LEUNG, Wingching Vincent , HE, Allen , XU, Rui , ABDEL GHANY, Ehab Ahmed Sobhy
IPC分类号： H04B1/00 , H05K1/02

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