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    • 1. 发明申请
    • DEVICE INCLUDING QUANTUM DOTS
    • 包括量子的设备
    • WO2012138410A1
    • 2012-10-11
    • PCT/US2012/023674
    • 2012-02-02
    • QD VISION, INC.COX, MarshallBREEN, CraigZHOU, ZhaoqunSTECKEL, Jonathan, S.
    • COX, MarshallBREEN, CraigZHOU, ZhaoqunSTECKEL, Jonathan, S.
    • H01L21/20
    • H01L33/04H01L21/02439H01L21/02491H01L21/02502H01L21/02521H01L21/0256H01L21/02601H01L33/005H01L33/0087H01L33/06H01L33/28H01L33/30H01L51/502
    • A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
    • 一种制造器件的方法,所述方法包括:在第一电极上沉积包含量子点的层,所述量子点包括附着于其外表面的配体; 处理包含量子点的沉积层的表面以除去暴露的配体; 并在其上形成器件层。 还公开了根据所公开的方法制造的装置。 本发明的另一方面涉及一种包括第一电极和第二电极以及在两个电极之间包含量子点的层,该层包括从分散体沉积的量子点,所述分散体在形成之后已被处理以除去暴露的配体 设备中的层。 本发明的另一方面涉及包括第一电极和第二电极的装置,包括设置在第一和第二电极之间的第一无机半导体材料的层和设置在第一和第二电极之间的多个量子点,外部 包括第二无机半导体材料的量子点的表面,其中第一无机半导体材料和第二无机半导体材料的组成相同(不考虑量子点的外表面上的任何配体)。
    • 5. 发明申请
    • DEVICE INCLUDING QUANTUM DOTS AND METHOD FOR MAKING SAME
    • 包括量子的装置及其制造方法
    • WO2012158252A1
    • 2012-11-22
    • PCT/US2012/029464
    • 2012-03-16
    • QD VISION, INC.MASHFORD, Benjamin, S.ZHOU, ZhaoqunKAZLAS, Peter, T.
    • MASHFORD, Benjamin, S.ZHOU, ZhaoqunKAZLAS, Peter, T.
    • H01L21/20
    • H01L51/502B82Y20/00B82Y30/00B82Y40/00C09K11/025C09K11/565C09K11/883H01L33/06H01L51/005H01L51/0058H01L51/0059H01L51/006H01L51/4233H01L51/5056H01L51/5088H01L2251/5369H05B33/14Y02E10/549Y10S977/774Y10S977/892Y10S977/896Y10S977/95
    • One embodiment relates to a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes, wherein at least a portion of the quantum dots comprise a cote comprising a first semiconductor material and an outer shell surrounding the core, the shell comprising a second semiconductor material, wherein the first semiconductor material confines holes better than electrons in the core and the second semiconductor material is permeable to electrons; and a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of a first inorganic semiconductor material, the first layer being disposed between the layer comprising quantum dots and the cathode, wherein the first layer and the cathode form an ohmic contact during operation of the device. In a second embodiments, a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes; a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of an n-doped inorganic semiconductor material, the first layer being in contact with the cathode and positioned between the emissive layer and the cathode, and a second layer comprising a material capable of transporting electrons comprising an inorganic semiconductor material, the second layer being disposed between the emissive layer and the first layer, wherein the second layer has a lower electron conductivity than the first layer. In a third embodiment, a device comprises a pair of electrodes comprising an anode and a cathode; an layer comprising quantum dots disposed between the electrodes; and a UV treated first layer comprising a material capable of transporting and injecting electrons in contact with the cathode and positioned between the emissive layer and the cathode, the material capable of transporting and injecting electrons comprising an inorganic semiconductor material. A method and other embodiments are also disclosed.
    • 一个实施例涉及一种包括一对包括阳极和阴极的电极的装置; 包括设置在所述电极之间的量子点的层,其中所述量子点的至少一部分包括包含第一半导体材料和围绕所述芯的外壳的壳体,所述外壳包括第二半导体材料,其中所述第一半导体材料限制孔 优于芯中的电子,第二半导体材料对电子是可透过的; 以及包含能够输送和注入电子的材料的第一层,所述材料包含第一无机半导体材料的纳米颗粒,所述第一层设置在包括量子点和阴极的层之间,其中第一层和阴极形成欧姆 在设备运行期间接触。 在第二实施例中,装置包括一对包括阳极和阴极的电极; 包括设置在电极之间的量子点的层; 包括能够输送和注入电子的材料的第一层,所述材料包含n掺杂的无机半导体材料的纳米颗粒,所述第一层与阴极接触并位于发光层和阴极之间,第二层包括 能够输送包含无机半导体材料的电子的材料,所述第二层设置在所述发射层和所述第一层之间,其中所述第二层具有比所述第一层更低的电子传导性。 在第三实施例中,器件包括一对包括阳极和阴极的电极; 包括设置在电极之间的量子点的层; 以及UV处理的第一层,其包括能够传输和注入与阴极接触并且位于发光层和阴极之间的材料的材料,该材料能够传输和注入包含无机半导体材料的电子。 还公开了一种方法和其他实施例。
    • 7. 发明公开
    • LIGHT-EMITTING DEVICE INCLUDING QUANTUM DOTS
    • 发光装置包括量子点
    • EP2283342A2
    • 2011-02-16
    • EP09727880.8
    • 2009-04-03
    • QD Vision, Inc.
    • ZHOU, ZhaoqunKAZLAS, Peter, T.MISIC, MeadPOPOVIC, ZoranMORRIS, John, Spencer
    • G01N21/63
    • H01L51/5012B82Y20/00H01L51/5048H01L51/5088H01L2251/552
    • A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
    • 公开了包括包含量子点的发射材料的发光器件。 在一个实施例中,该器件包括阴极,包括能够传输和注入包括无机材料的电子的材料的层,包括量子点的发射层,包括能够传输空穴的材料的层,包含空穴注入材料的层 ,和阳极。 在某些实施例中,空穴注入材料可以是p型掺杂空穴传输材料。 在某些优选实施例中,量子点包含半导体纳米晶体。 在本发明的另一方面中,提供了一种发光器件,其中器件具有不大于1240 /λ的初始导通电压,其中λ表示由发射层发射的光的波长(nm)。 公开了其他发光装置和方法。