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    • 5. 发明授权
    • Method of manufacturing an array substrate for use in a LCD device
    • 制造用于LCD装置的阵列基板的方法
    • US07705925B2
    • 2010-04-27
    • US10774517
    • 2004-02-10
    • Woo-Hyuk Choi
    • Woo-Hyuk Choi
    • G02F1/136
    • G02F1/13458G02F1/136227G02F1/1368G02F2202/103
    • A TFT array substrate has a substrate with a pixel region and a switching region. A gate line has both a gate electrode that extends into the switching region and a gate pad is formed on the substrate. A gate pad electrode is formed on the gate pad. A data line includes both a source electrode that extends from the data line into the switching region and a data pad. A data pad electrode is formed on the data pad. A drain electrode that is spaced apart from the source electrode is over the gate electrode. A gate insulation layer covers the gate electrode and the substrate. Semiconductor layers, including a pure amorphous silicon layer and a doped amorphous silicon layer, and a protection layer extends over the source electrode, over the silicon layers, and over part of the drain electrode. A pixel electrode is formed on the pixel region. The pixel electrode contacts a side portion of the drain electrode. The TFT array substrate is fabricated using a back exposure.
    • TFT阵列基板具有带有像素区域和开关区域的基板。 栅极线具有延伸到开关区域的栅电极和在衬底上形成栅极焊盘的栅极线。 栅极焊盘电极形成在栅极焊盘上。 数据线包括从数据线延伸到切换区域的源电极和数据焊盘。 数据焊盘电极形成在数据焊盘上。 与源电极间隔开的漏电极在栅电极之上。 栅极绝缘层覆盖栅电极和衬底。 包括纯非晶硅层和掺杂的非晶硅层的半导体层和保护层在硅层上方以及在部分漏电极上在源极上延伸。 像素电极形成在像素区域上。 像素电极接触漏电极的侧部。 使用反向曝光来制造TFT阵列基板。
    • 7. 发明授权
    • Array substrate for use in LCD device
    • 用于LCD设备的阵列基板
    • US06717631B2
    • 2004-04-06
    • US09745527
    • 2000-12-26
    • Woo-Hyuk Choi
    • Woo-Hyuk Choi
    • G02F1136
    • G02F1/13458G02F1/136227G02F1/1368G02F2202/103
    • A TFT array substrate has a substrate with a pixel region and a switching region. A gate line has both a gate electrode that extends into the switching region and a gate pad is formed on the substrate. A gate pad electrode is formed on the gate pad. A data line includes both a source electrode that extends from the data line into the switching region and a data pad. A data pad electrode is formed on the data pad. A drain electrode that is spaced apart from the source electrode is over the gate electrode. A gate insulation layer covers the gate electrode and the substrate. Semiconductor layers, including a pure amorphous silicon layer and a doped amorphous silicon layer, and a protection layer extends over the source electrode, over the silicon layers, and over part of the drain electrode. A pixel electrode is formed on the pixel region. The pixel electrode contacts a side portion of the drain electrode. The TFT array substrate is fabricated using a back exposure.
    • TFT阵列基板具有带有像素区域和开关区域的基板。 栅极线具有延伸到开关区域的栅电极和在衬底上形成栅极焊盘的栅极线。 栅极焊盘电极形成在栅极焊盘上。 数据线包括从数据线延伸到切换区域的源电极和数据焊盘。 数据焊盘电极形成在数据焊盘上。 与源电极间隔开的漏电极在栅电极之上。 栅极绝缘层覆盖栅电极和衬底。 包括纯非晶硅层和掺杂的非晶硅层的半导体层和保护层在硅层上方以及在部分漏电极上在源极上延伸。 像素电极形成在像素区域上。 像素电极接触漏电极的侧部。 使用反向曝光来制造TFT阵列基板。