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1. 发明授权

US3949387A Beam addressable film using amorphous magnetic material 失效
标题翻译：使用非晶磁性材料的光束寻址膜
公开(公告)号：US3949387A
公开(公告)日：1976-04-06
申请号：US284512
申请日：1972-08-29
申请人： Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino , Thomas R. McGuire
发明人： Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino , Thomas R. McGuire
IPC分类号： G11C11/14 , G11B11/10 , G11B11/105 , G11B11/11 , G11C13/06 , G11C19/08 , H01F10/00 , H01F10/12 , H01F10/13
CPC分类号： G11B11/11 , G11B11/10 , G11B11/10504 , G11B11/10515 , G11B11/10517 , G11B11/10526 , G11B11/10545 , G11B11/10591 , G11C13/06 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F10/13 , H01F10/137
摘要： A beam addressable file using as a storage medium an amorphous magnetic composition having uniaxial anisotropy. The storage medium can be prepared in thin film or bulk form or as particles in a binder. The storage medium can be comprised of a single element or a multicomponent system where at least one of the components has an unpaired spin so that the composition has a net magnetic moment. The storage comosition exists in a microcrystalline structure (i.e., it has localized atomic ordering over a distance 25-100 angstroms) and also in a substantially amorphous structure (i.e., when the composition has localized atomic ordering only over distances less than 25 angstroms). Binary and ternary compositions, either alloys or compounds, are suitable. particularly good examples are combinations of rare earth elements and transition metal elements. The magnetic properties of these amorphous magnetic compositions are easily changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties. Either electron beams or light beams can be used to write information into the storage medium and optical readout is generally preferred. Curie point writing or compensation point writing is used.
摘要翻译：使用具有单轴各向异性的非晶磁性组合物作为存储介质的光束可寻址文件。存储介质可以以薄膜或本体形式或作为粘合剂中的颗粒制备。存储介质可以由单个元件或多组分系统组成，其中至少一个组件具有不成对的纺丝，使得组合物具有净磁矩。存储组合存在于微晶结构中（即，其在25-100埃的距离上具有局部原子排列），并且还存在于基本上非晶结构中（即，当组合物仅在小于25埃的距离处具有局部原子排列时）。二元和三元组合物，合金或化合物都是合适的。特别好的例子是稀土元素和过渡金属元素的组合。这些非晶磁性组合物的磁性能在制造过程中或在制造之后容易改变，并且可以容易地掺杂组合物而不会不利地影响磁性能。可以使用电子束或光束将信息写入存储介质，并且通常优选光学读出。使用居里点写入或补偿点写入。

2. 发明授权

US5422621A Oriented granular giant magnetoresistance sensor 失效
标题翻译：定向颗粒状巨磁阻传感器
公开(公告)号：US5422621A
公开(公告)日：1995-06-06
申请号：US145379
申请日：1993-10-29
申请人： Richard J. Gambino , James M. E. Harper , Thomas R. McGuire , Thomas S. Plaskett
发明人： Richard J. Gambino , James M. E. Harper , Thomas R. McGuire , Thomas S. Plaskett
IPC分类号： G01R33/09 , G11B5/39 , G11B5/48 , H01F10/14 , H01F41/22 , H01L43/08 , H01L43/10 , H01L43/12 , H01L43/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/484 , H01L43/10 , G11B2005/3996
摘要： A giant magnetoresistance sensor incorporating an orientated granular layer wherein the layer has a copper matrix with magnetic particles of a nickel cobalt alloy wherein the magnetic particles have a magnetocrystalline anisotropy constant K.sub.1 in the range from 0 to 3.times.10.sup.4 ergs/cm.sup.3. Alternatively, a silver or gold matrix may be used with magnetic particles of a nickel-ion alloy. The granular layer preferably has a (100) texture to provide the magnetic particles with their easy axes in the plane of the layer. The magnetic particles have their largest dimension in the range from 40 to 400 angstroms. The invention overcomes the problem of requiring a large magnetic field to obtain the saturation .DELTA.R/R. By providing a granular film with magnetic particles of low anisotropy, the saturation field to obtain .DELTA.R/R may be as low as 10 to 20 Oe.
摘要翻译：一种结合了取向粒状层的巨磁电阻传感器，其中该层具有带镍钴合金的磁性颗粒的铜基体，其中磁性颗粒的磁晶各向异性常数K1为0至3×10 4赫兹/ cm3。或者，可以使用银或金基质与镍离子合金的磁性颗粒。颗粒层优选具有（100）结构，以使磁性颗粒在层的平面中具有易于轴的位置。磁性颗粒的最大尺寸在40至400埃的范围内。本发明克服了需要大磁场获得饱和度DELTA R / R的问题。通过提供具有低各向异性的磁性颗粒的颗粒膜，获得DELTA R / R的饱和场可以低至10至20Oe。

3. 发明授权

US5565236A Method of forming a giant magnetoresistance sensor 失效
标题翻译：形成巨磁阻传感器的方法
公开(公告)号：US5565236A
公开(公告)日：1996-10-15
申请号：US449449
申请日：1995-05-24
申请人： Richard J. Gambino , James M. E. Harper , Thomas R. McGuire , Thomas S. Plaskett
发明人： Richard J. Gambino , James M. E. Harper , Thomas R. McGuire , Thomas S. Plaskett
IPC分类号： G01R33/09 , G11B5/39 , G11B5/48 , H01F10/14 , H01F41/22 , H01L43/08 , H01L43/10 , H01L43/12 , B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/484 , H01L43/10 , G11B2005/3996
摘要： A method for forming a giant magnetoresistance sensor and method for making is described incorporating an oriented granular layer wherein the layer has a copper matrix with magnetic particles of a nickel cobalt alloy wherein the magnetic particles have a magnetocrystalline anisotropy constant K.sub.1 in the range from 0 to 3.times.10.sup.4 ergs/cm.sup.3. Alternatively, a silver or gold matrix may be used with magnetic particles of a nickel-iron alloy. The granular layer preferably has a (100) texture to provide the magnetic particles with their easy axes in the plane of the layer. The magnetic particles have their largest dimension in the range from 40 to 400 angstroms. The invention overcomes the problem of requiring a large magnetic field to obtain the saturation .DELTA.R/R. By providing a granular film with magnetic particles of low anisotropy, the saturation field to obtain .DELTA.R/R may be as low as 10 to 20 Oe.
摘要翻译：描述了一种形成巨磁电阻传感器的方法及其制造方法，该方法结合了取向颗粒层，其中该层具有带镍钴合金磁性颗粒的铜基体，其中磁性颗粒的磁晶各向异性常数K1在0至 3x104 ergs / cm3。或者，银或金基质可以与镍 - 铁合金的磁性颗粒一起使用。颗粒层优选具有（100）结构，以使磁性颗粒在层的平面中具有易于轴的位置。磁性颗粒的最大尺寸在40至400埃的范围内。本发明克服了需要大磁场获得饱和度DELTA R / R的问题。通过提供具有低各向异性的磁性颗粒的颗粒膜，获得DELTA R / R的饱和场可以低至10至20Oe。

4. 发明授权

US5534360A Amorphous uranium alloy and use thereof 失效
标题翻译：无定形铀合金及其用途
公开(公告)号：US5534360A
公开(公告)日：1996-07-09
申请号：US264238
申请日：1994-06-22
申请人： Richard J. Gambino , Michael W. McElfresh , Thomas R. McGuire , Thomas S. Plaskett
发明人： Richard J. Gambino , Michael W. McElfresh , Thomas R. McGuire , Thomas S. Plaskett
IPC分类号： G11B11/105 , G11B11/11 , H01F1/047 , G11B5/66
CPC分类号： G11B11/10586 , H01F1/047 , G11B11/10508 , G11B11/10515 , G11B11/10532 , G11B11/11 , Y10S428/90
摘要： An amorphous alloy containing uranium and a member selected from the group of N, P, As, Sb, Bi, S, Se, Te, Po and mixtures thereof; and use thereof for storage medium, light modulator or optical isolator.
摘要翻译：含有铀和选自N，P，As，Sb，Bi，S，Se，Te，Po及其混合物的非晶合金; 并用于存储介质，光调制器或光隔离器。

5. 发明授权

US5373238A Four layer magnetoresistance device and method for making a four layer magnetoresistance device 失效
标题翻译：四层磁阻器件及制造四层磁阻器件的方法
公开(公告)号：US5373238A
公开(公告)日：1994-12-13
申请号：US973095
申请日：1992-11-06
申请人： Thomas R. McGuire , Thomas S. Plaskett
发明人： Thomas R. McGuire , Thomas S. Plaskett
IPC分类号： G01D5/18 , G01D5/245 , G01R33/09 , G11B5/39 , H01F10/32 , H01F41/30 , H01L43/08 , G01R33/02 , G11C19/08
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F41/302 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistive device is described for detecting magnetic fields incorporating a sandwich structure of four layers, two of which are ferromagnetic and which are separated by a non-ferromagnetic metallic layer and where one ferromagnetic layer is adjacent a fourth antiferromagnetic layer and exhibiting exchange anisotropy with the adjacent ferromagnetic layer. The invention overcomes the problem of small changes in magnetoresistance and in controlling the magnetization response of the magnetoresistive device.
摘要翻译：描述了用于检测包含四层的夹层结构的磁场的磁阻装置，其中两层是铁磁性的，并且由非铁磁性金属层分隔开，并且其中一个铁磁层与第四反铁磁性层相邻并且表现出交换各向异性相邻铁磁层。本发明克服了磁阻的小变化和控制磁阻器件的磁化响应的问题。

6. 发明授权

US4476454A New magnetoresistive materials 失效
标题翻译：新型磁阻材料
公开(公告)号：US4476454A
公开(公告)日：1984-10-09
申请号：US509739
申请日：1983-06-30
申请人： Joseph A. Aboaf , Erik Klokholm , Thomas R. McGuire
发明人： Joseph A. Aboaf , Erik Klokholm , Thomas R. McGuire
IPC分类号： G01R33/09 , C22C19/03 , C22C38/00 , G11B5/39 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3903 , H01L43/10
摘要： Devices and circuits are described employing magnetoresistive materials exhibiting a negative .DELTA..rho. effect (.DELTA..rho.=.rho..parallel.-.rho..perp.). In these materials, the electrical resistivity .rho. of the material in a direction perpendicular to the direction of current through the material is greater than the electrical resistivity .rho..parallel. of the material in a direction parallel to the direction of the electrical current through the material. These are ferromagnetic materials exhibiting magnetoresistance in the presence of an electrical current through the material and a magnetic field applied to the material to magnetize it to saturation at room temperature. These devices and circuits have advantages over conventional devices and circuits employing magnetoresistive materials of the conventional type, in which .DELTA..rho. is a positive quantity.
摘要翻译：使用具有负DELTA rho效应（DELTA rho = rho PARALLEL-rho ORTHOGONAL）的磁阻材料来描述器件和电路。在这些材料中，材料在垂直于通过材料的电流方向的方向上的电阻率rho大于材料在平行于通过材料的电流方向的方向上的电阻率rho PARALLEL。这些是在存在通过材料的电流的情况下表现出磁阻的铁磁材料和施加到材料上的磁场以使其在室温下饱和。这些器件和电路具有优于常规器件和使用常规类型的磁阻材料的电路的优点，其中DELTA rho是正量的。

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