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1. 发明授权

US08933468B2 Electronic device with reduced non-device edge area 有权
标题翻译：电子设备具有减少的非设备边缘区域
公开(公告)号：US08933468B2
公开(公告)日：2015-01-13
申请号：US13422924
申请日：2012-03-16
申请人： Prashant Mandlik , Ruiqing Ma , Jeff Silvernail , Julia J. Brown , Lin Han , Sigurd Wagner , Luke Walski
发明人： Prashant Mandlik , Ruiqing Ma , Jeff Silvernail , Julia J. Brown , Lin Han , Sigurd Wagner , Luke Walski
IPC分类号： H01L29/18 , H01L33/00 , H01L27/32 , H01L25/075
CPC分类号： H01L51/5253 , H01L25/0753 , H01L27/3209 , H01L51/56 , H01L2251/566 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.
摘要翻译：可以提供第一产品，其包括具有第一表面，第一侧和第一边缘与第一表面相交的第一边缘的基底; 以及设置在所述基板上的装置，所述装置具有第二侧，所述第二侧的至少第一部分设置在距所述基板的第一边缘3mm以内。第一产品还可以包括覆盖基板的第一边缘的至少一部分，基板的第一侧的至少一部分以及装置的第二侧的至少第一部分的第一阻挡膜。

2. 发明申请

US20130241076A1 ELECTRONIC DEVICE WITH REDUCED NON-DEVICE EDGE AREA 有权
公开(公告)号：US20130241076A1
公开(公告)日：2013-09-19
申请号：US13422924
申请日：2012-03-16
申请人： Prashant Mandlik , Ruiqing Ma , Jeff Silvernail , Julie J. Brown , Lin Han , Sigurd Wagner , Luke Walski
发明人： Prashant Mandlik , Ruiqing Ma , Jeff Silvernail , Julie J. Brown , Lin Han , Sigurd Wagner , Luke Walski
IPC分类号： H01L23/28 , H01L21/78 , H01L21/56 , H01L23/48
CPC分类号： H01L51/5253 , H01L25/0753 , H01L27/3209 , H01L51/56 , H01L2251/566 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

3. 发明申请

US20110114994A1 HYBRID LAYERS FOR USE IN COATINGS ON ELECTRONIC DEVICES OR OTHER ARTICLES 有权
标题翻译：混合层用于电子设备或其他文章的涂料
公开(公告)号：US20110114994A1
公开(公告)日：2011-05-19
申请号：US12990860
申请日：2009-05-05
申请人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
发明人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
IPC分类号： H01L33/52
CPC分类号： H01L51/5253 , C23C16/02 , C23C16/0272 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/45523 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00 , H01L51/5203 , H01L51/5259 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/566
摘要： A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.
摘要翻译：一种用于保护包括有机器件本体的电子器件的方法。该方法涉及使用通过化学气相沉积沉积的混合层。混合层包括聚合材料和非聚合材料的混合物，其中聚合物与非聚合材料的重量比在95:5至5:95的范围内，其中聚合材料和非聚合材料聚合物材料由相同的前体材料源产生。还公开了用于阻止环境污染物的横向扩散的技术。

4. 发明授权

US08592253B2 Hybrid layers for use in coatings on electronic devices or other articles 有权
标题翻译：用于电子设备或其他物品上的涂料的混合层
公开(公告)号：US08592253B2
公开(公告)日：2013-11-26
申请号：US12990860
申请日：2009-05-05
申请人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
发明人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
IPC分类号： H01L21/44 , H01L21/48
CPC分类号： H01L51/5253 , C23C16/02 , C23C16/0272 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/45523 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00 , H01L51/5203 , H01L51/5259 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/566
摘要： A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.
摘要翻译：一种用于保护包括有机器件本体的电子器件的方法。该方法涉及使用通过化学气相沉积沉积的混合层。混合层包括聚合材料和非聚合材料的混合物，其中聚合物与非聚合材料的重量比在95:5至5:95的范围内，其中聚合材料和非聚合材料聚合物材料由相同的前体材料源产生。还公开了用于阻止环境污染物的横向扩散的技术。

5. 发明申请

US20130202782A1 Thin Film Permeation Barrier For Devices And Substrates 审中-公开
标题翻译：用于器件和基板的薄膜渗透屏障
公开(公告)号：US20130202782A1
公开(公告)日：2013-08-08
申请号：US13365921
申请日：2012-02-03
申请人： Prashant Mandlik , Ruiqing Ma , Jeff Silvernail
发明人： Prashant Mandlik , Ruiqing Ma , Jeff Silvernail
IPC分类号： H05B33/10
CPC分类号： H05B33/10 , C23C16/401 , H01L51/5253
摘要： A method for fabricating a device having a barrier layer over a substrate is provided. A first sublayer of the barrier layer may be deposited via chemical vapor deposition using a first set of deposition parameters. The first set of deposition parameters may include a power density, a deposition pressure, a non-deposition gas flow rate and a deposition gas flow rate. One or more parameters may be set related to the flow ratio of non-deposition gas to deposition gas multiplied by the power density, or the power density divided by (1) the deposition pressure, (2) the sum of the non-deposition gas flow rate and the deposition gas flow rate, or (3) the precursor gas flow rate. The material of the first barrier layer may be selected to have a particular plasma etch rate compared to the etch rate of thermally growth silicon oxide under the same etching conditions.
摘要翻译：提供一种制造在衬底上具有阻挡层的器件的方法。可以使用第一组沉积参数通过化学气相沉积来沉积阻挡层的第一子层。第一组沉积参数可以包括功率密度，沉积压力，非沉积气体流速和沉积气体流速。可以设置一个或多个参数，其与非沉积气体与沉积气体的流量乘以功率密度或功率密度除以（1）沉积压力相关，（2）非沉积气体的总和流量和沉积气体流量，或（3）前体气体流速。与相同蚀刻条件下的热生长氧化硅的蚀刻速率相比，第一阻挡层的材料可以被选择为具有特定的等离子体蚀刻速率。

6. 发明授权

US09312511B2 Edge barrier film for electronic devices 有权
标题翻译：用于电子设备的边缘阻挡膜
公开(公告)号：US09312511B2
公开(公告)日：2016-04-12
申请号：US13422926
申请日：2012-03-16
申请人： Prashant Mandlik , Ruiqing Ma , Julia J. Brown
发明人： Prashant Mandlik , Ruiqing Ma , Julia J. Brown
IPC分类号： H01L23/48 , H01L51/52
CPC分类号： H01L51/5253 , H01L51/56 , Y10T428/23
摘要： In some embodiments, a first product is provided. The first product may include a substrate, a device having a device footprint disposed over the substrate, and a barrier film disposed over the substrate and substantially along a side of the device footprint. The barrier film may comprise a mixture of a polymeric material and non-polymeric material. The barrier film may have a perpendicular length that is less than or equal to 3.0 mm from the side of the device footprint.
摘要翻译：在一些实施例中，提供了第一产品。第一产品可以包括衬底，具有设置在衬底上的器件覆盖区的器件，以及设置在衬底上并且基本上沿着器件覆盖区的一侧的阻挡膜。阻挡膜可以包括聚合材料和非聚合材料的混合物。阻挡膜可以具有距离器件覆盖区一侧小于或等于3.0mm的垂直长度。

7. 发明申请

US20130244079A1 EDGE BARRIER FILM FOR ELECTRONIC DEVICES 有权
标题翻译：用于电子设备的边缘遮蔽膜
公开(公告)号：US20130244079A1
公开(公告)日：2013-09-19
申请号：US13422926
申请日：2012-03-16
申请人： Prashant Mandlik , Ruiqing Ma , Julia J. Brown
发明人： Prashant Mandlik , Ruiqing Ma , Julia J. Brown
IPC分类号： B32B3/02 , C23C16/44 , B05D5/00 , H01M10/04 , B32B9/00
CPC分类号： H01L51/5253 , H01L51/56 , Y10T428/23
摘要： In some embodiments, a first product is provided. The first product may include a substrate, a device having a device footprint disposed over the substrate, and a barrier film disposed over the substrate and substantially along a side of the device footprint. The barrier film may comprise a mixture of a polymeric material and non-polymeric material. The barrier film may have a perpendicular length that is less than or equal to 3.0 mm from the side of the device footprint.
摘要翻译：在一些实施例中，提供了第一产品。第一产品可以包括衬底，具有设置在衬底上的器件覆盖区的器件，以及设置在衬底上并且基本上沿着器件覆盖区的一侧的阻挡膜。阻挡膜可以包括聚合材料和非聚合材料的混合物。阻挡膜可以具有距离器件覆盖区一侧小于或等于3.0mm的垂直长度。

8. 发明授权

US08835909B2 Hybrid dielectric material for thin film transistors 有权
标题翻译：用于薄膜晶体管的混合电介质材料
公开(公告)号：US08835909B2
公开(公告)日：2014-09-16
申请号：US13056704
申请日：2009-07-30
申请人： Lin Han , Prashant Mandlik , Sigurd Wagner
发明人： Lin Han , Prashant Mandlik , Sigurd Wagner
IPC分类号： H01L29/08 , H01L21/02 , H01L29/66 , H01L29/49 , C23C16/40 , H01L21/316
CPC分类号： H01L29/4908 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L29/66765
摘要： Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO2-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.
摘要翻译：使用有机硅酸盐玻璃（OSG）作为绝缘体材料制造薄膜晶体管。有机硅酸盐玻璃可以是通过等离子体增强的化学气相沉积从硅氧烷和氧气沉积的SiO 2 - 硅氧烷混合材料。这些混合材料可以用作栅极电介质，作为底层，和/或作为背沟道钝化层。晶体管可以制成任何常规的TFT几何形状。

9. 发明申请

US20110180789A1 Hybrid Dielectric Material for Thin Film Transistors 有权
标题翻译：用于薄膜晶体管的混合电介质材料
公开(公告)号：US20110180789A1
公开(公告)日：2011-07-28
申请号：US13056704
申请日：2009-07-30
申请人： Lin Han , Prashant Mandlik , Sigurd Wagner
发明人： Lin Han , Prashant Mandlik , Sigurd Wagner
IPC分类号： H01L51/52 , H01L51/10 , H01L29/786 , H01L29/04 , H01L21/316
CPC分类号： H01L29/4908 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L29/66765
摘要： Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO2-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.
摘要翻译：使用有机硅酸盐玻璃（OSG）作为绝缘体材料制造薄膜晶体管。有机硅酸盐玻璃可以是通过等离子体增强的化学气相沉积从硅氧烷和氧气沉积的SiO 2 - 硅氧烷杂化材料。这些混合材料可以用作栅极电介质，作为底层，和/或作为背沟道钝化层。晶体管可以制成任何常规的TFT几何形状。

10. 发明授权

US08710518B2 Flexible lighting devices 有权
标题翻译：灵活的照明设备
公开(公告)号：US08710518B2
公开(公告)日：2014-04-29
申请号：US13469992
申请日：2012-05-11
申请人： Prashant Mandlik , Peter Levermore , Huiqing Pang , Emory Krall , Jason Paynter , Ruiqing Ma
发明人： Prashant Mandlik , Peter Levermore , Huiqing Pang , Emory Krall , Jason Paynter , Ruiqing Ma
IPC分类号： H01L51/56
CPC分类号： H01L51/56 , H01L51/0097 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10−1 Nm and 10−6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.
摘要翻译：提供了用于制造第一装置的第一装置和方法。第一器件可以包括柔性衬底和设置在柔性衬底上的至少一个有机发光器件（OLED）。第一装置可以具有在10-1Nm至10-6Nm之间的弯曲刚度，并且第一装置的临界应变能释放速率与材料密度因子的比可以大于0.05Jm / Kg。

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