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1. 发明授权

US07564295B2 Automatic bias circuit for sense amplifier 有权
标题翻译：读出放大器的自动偏置电路
公开(公告)号：US07564295B2
公开(公告)日：2009-07-21
申请号：US11769611
申请日：2007-06-27
申请人： Po-Yao Ker , Shine Chung , Fu-Lung Hsueh
发明人： Po-Yao Ker , Shine Chung , Fu-Lung Hsueh
IPC分类号： H01H37/76 , H01H85/00
CPC分类号： G11C17/18 , G11C5/147
摘要： The present invention discloses a bias circuit for a sense amplifier having a device under sensing, the device under sensing having an un-programmed state and a programmed state, the bias circuit comprises at least one first branch having at least one first device formed substantially the same as the device under sensing and remaining in the un-programmed state, and at least one second device formed also substantially the same as the device under sensing and being in the programmed state, wherein the at least one first device and the at least one second device are serially connected. A typical application of the present invention is an electrical fuse memory.
摘要翻译：本发明公开了一种用于感测放大器的偏置电路，其具有被感测的器件，该感测器件处于非编程状态和编程状态，该偏置电路包括至少一个第一分支，该第一分支具有至少一个基本上形成与感测下的设备相同并且保持在未编程状态，并且至少一个第二设备形成也与感测下的设备基本相同并处于编程状态，其中至少一个第一设备和至少一个第二设备串联连接。本发明的典型应用是电熔丝存储器。

2. 发明申请

US20080258255A1 Electromigration Aggravated Electrical Fuse Structure 审中-公开
标题翻译：电迁移加重电气保险丝结构
公开(公告)号：US20080258255A1
公开(公告)日：2008-10-23
申请号：US11738868
申请日：2007-04-23
申请人： Po-Yao Ker , Shine Chung
发明人： Po-Yao Ker , Shine Chung
IPC分类号： H01L23/52 , H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure with aggravated electromigration effect is disclosed, which comprises an anode area overlaying a first plurality of contacts that are coupled to a positively high voltage during a programming of the fuse structure, a cathode area overlaying a second plurality of contacts that are coupled to a complementary low voltage during a programming of the fuse structure, and a fuse link area having a first and second end, wherein the first end contacts the anode area at a predetermined distance to the nearest of the first plurality of contacts, and the second end contacts the cathode area at the predetermined distance to the nearest of the second plurality of contacts, wherein the cathode area is smaller than the anode area for the aggravating electromigration effect.
摘要翻译：公开了一种具有恶化的电迁移效应的熔丝结构，其包括在熔丝结构的编程期间覆盖耦合到正高电压的第一多个触点的阳极区域，覆盖第二多个触点的阴极区域，在熔丝结构的编程期间的互补的低电压以及具有第一和第二端的熔丝链接区域，其中第一端以最接近第一多个触点的预定距离接触阳极区域，而第二端以与第二多个触点最接近的预定距离接触阴极区域，其中阴极区域小于用于加重电迁移效应的阳极区域。

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