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1. 发明申请

US20120241824A1 SPACER STRUCTURE WHEREIN CARBON-CONTAINING OXIDE FILM FORMED WITHIN 有权
标题翻译：在其内形成含碳氧化物膜的间隔结构
公开(公告)号：US20120241824A1
公开(公告)日：2012-09-27
申请号：US13490482
申请日：2012-06-07
申请人： Po-Lun Cheng , Che-Hung Liu
发明人： Po-Lun Cheng , Che-Hung Liu
IPC分类号： H01L29/78
CPC分类号： H01L29/6656
摘要： A spacer structure contains a carbon-containing oxide film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxide film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxide film.
摘要翻译：间隔结构包含位于栅极侧壁上的含碳氧化物膜和覆盖含碳氧化物膜的氮化物膜。含碳氧化物膜具有低蚀刻速率，使得间隔物结构在蚀刻含碳氧化膜期间具有良好的轮廓。

2. 发明申请

US20080061366A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：补充金属氧化物半导体器件及其制造方法
公开(公告)号：US20080061366A1
公开(公告)日：2008-03-13
申请号：US11530480
申请日：2006-09-11
申请人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
发明人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
IPC分类号： H01L29/76
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
摘要翻译：互补金属氧化物半导体（CMOS）器件包括具有第一有源区和第二有源区的衬底; 分别设置在所述第一有源区和所述第二有源区上的第一栅极结构和第二栅极结构; 分别设置在第一栅极结构和第二栅极结构的侧壁上的第一间隔结构和第二间隔结构; 在第一栅极结构和第二栅极结构的两侧分别设置在基板中的第一LDD和第二LDD; 外延材料层，设置在第一有源区并位于第一LDD的一侧; 以及钝化层，设置在所述第一栅极结构上，所述第一间隔结构和所述第一LDD并且覆盖所述第二有源区，其中所述钝化层包含含碳氮氧化物层。

3. 发明授权

US07592231B2 MOS transistor and fabrication thereof 有权
标题翻译： MOS晶体管及其制造
公开(公告)号：US07592231B2
公开(公告)日：2009-09-22
申请号：US11461639
申请日：2006-08-01
申请人： Po-Lun Cheng , Che-Hung Liu
发明人： Po-Lun Cheng , Che-Hung Liu
IPC分类号： H01L21/336
CPC分类号： H01L29/66628 , H01L21/7624 , H01L29/165 , H01L29/6653 , H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7843
摘要： A method of fabricating a MOS transistor is described. A substrate is provided, and then a composite layer for forming a gate structure and a carbon-containing mask material layer are formed thereon in turn, wherein the carbon-containing mask material layer is formed with a carbon-containing precursor gas and a reaction gas. The carbon-containing mask material layer and the composite layer are patterned into a carbon-containing hard mask layer and a gate structure, respectively. A spacer is formed on the sidewalls of the gate structure and the carbon-containing hard mask layer. A passivation layer is formed over the substrate, and then a portion of the passivation layer is removed to expose a portion of the substrate. A doped epitaxial layer is formed on the exposed portion of the substrate.
摘要翻译：描述制造MOS晶体管的方法。提供基板，然后依次形成用于形成栅极结构和含碳掩模材料层的复合层，其中含碳掩模材料层由含碳前体气体和反应气体形成。将含碳掩模材料层和复合层分别图案化为含碳硬掩模层和栅极结构。在栅极结构和含碳硬掩模层的侧壁上形成间隔物。在衬底上形成钝化层，然后去除钝化层的一部分以露出衬底的一部分。在衬底的暴露部分上形成掺杂的外延层。

4. 发明授权

US07329591B2 Method for forming silicon-containing film and method for decreasing number of particles 有权
标题翻译：用于形成含硅膜的方法和减少颗粒数的方法
公开(公告)号：US07329591B2
公开(公告)日：2008-02-12
申请号：US11358971
申请日：2006-02-21
申请人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
发明人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
IPC分类号： C23C16/24
CPC分类号： C23C16/325 , C23C16/345 , C23C16/402 , C23C16/4411 , H01L21/0217 , H01L21/02271 , H01L21/3145 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/3185
摘要： A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.
摘要翻译：描述了形成含硅膜的方法。将基板放置在反应室中，然后将含硅气体引入反应室中以进行CVD工艺，并在基板上沉积含硅膜。在CVD过程中，将反应室的至少顶部内表面的温度控制在低于50℃。

5. 发明授权

US07402496B2 Complementary metal-oxide-semiconductor device and fabricating method thereof 有权
标题翻译：互补金属氧化物半导体器件及其制造方法
公开(公告)号：US07402496B2
公开(公告)日：2008-07-22
申请号：US11530480
申请日：2006-09-11
申请人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
发明人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
摘要翻译：互补金属氧化物半导体（CMOS）器件包括具有第一有源区和第二有源区的衬底; 分别设置在所述第一有源区和所述第二有源区上的第一栅极结构和第二栅极结构; 分别设置在第一栅极结构和第二栅极结构的侧壁上的第一间隔结构和第二间隔结构; 在第一栅极结构和第二栅极结构的两侧分别设置在基板中的第一LDD和第二LDD; 外延材料层，设置在第一有源区并位于第一LDD的一侧; 以及钝化层，设置在所述第一栅极结构上，所述第一间隔结构和所述第一LDD并且覆盖所述第二有源区，其中所述钝化层包含含碳氮氧化物层。

6. 发明申请

US20080116525A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE 审中-公开
标题翻译：补充金属氧化物半导体器件
公开(公告)号：US20080116525A1
公开(公告)日：2008-05-22
申请号：US12024069
申请日：2008-01-31
申请人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
发明人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
IPC分类号： H01L27/088
CPC分类号： H01L21/823814 , H01L21/823807 , H01L27/092 , H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7843 , H01L29/7848
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
摘要翻译：互补金属氧化物半导体（CMOS）器件包括具有第一有源区和第二有源区的衬底; 分别设置在所述第一有源区和所述第二有源区上的第一栅极结构和第二栅极结构; 分别设置在第一栅极结构和第二栅极结构的侧壁上的第一间隔结构和第二间隔结构; 在第一栅极结构和第二栅极结构的两侧分别设置在基板中的第一LDD和第二LDD; 外延材料层，设置在第一有源区并位于第一LDD的一侧; 以及钝化层，设置在所述第一栅极结构上，所述第一间隔结构和所述第一LDD并且覆盖所述第二有源区，其中所述钝化层包含含碳氮氧化物层。

7. 发明申请

US20070246751A1 SPACER STRUCTURE AND FABRICATION METHOD THEREOF 有权
标题翻译：间隔结构及其制造方法
公开(公告)号：US20070246751A1
公开(公告)日：2007-10-25
申请号：US11379226
申请日：2006-04-19
申请人： Po-Lun Cheng , Che-Hung Liu
发明人： Po-Lun Cheng , Che-Hung Liu
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/6656
摘要： A spacer structure contains a carbon-containing oxynitride film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxynitride film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxynitride film.
摘要翻译：间隔结构包含位于栅极侧壁上的含碳氧氮化物膜和覆盖含碳氧化物膜的氮化物膜。含碳氮氧化物膜具有低蚀刻速率，使得间隔物结构在蚀刻含碳氮氧化物膜期间可以具有良好的轮廓。

8. 发明申请

US20070197007A1 Method for forming silicon-containing film and method for decreasing number of particles 有权
标题翻译：用于形成含硅膜的方法和减少颗粒数的方法
公开(公告)号：US20070197007A1
公开(公告)日：2007-08-23
申请号：US11358971
申请日：2006-02-21
申请人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
发明人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
IPC分类号： H01L21/20
CPC分类号： C23C16/325 , C23C16/345 , C23C16/402 , C23C16/4411 , H01L21/0217 , H01L21/02271 , H01L21/3145 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/3185
摘要： A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.
摘要翻译：描述了形成含硅膜的方法。将基板放置在反应室中，然后将含硅气体引入反应室中以进行CVD工艺，并在基板上沉积含硅膜。在CVD过程中，将反应室的至少顶部内表面的温度控制在低于50℃。

9. 发明授权

US08415723B2 Spacer structure wherein carbon-containing oxide film formed within 有权
标题翻译：其中形成有碳氧化物膜的间隔结构
公开(公告)号：US08415723B2
公开(公告)日：2013-04-09
申请号：US13490482
申请日：2012-06-07
申请人： Po-Lun Cheng , Che-Hung Liu
发明人： Po-Lun Cheng , Che-Hung Liu
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/6656
摘要： A spacer structure contains a carbon-containing oxide film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxide film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxide film.
摘要翻译：间隔结构包含位于栅极侧壁上的含碳氧化物膜和覆盖含碳氧化物膜的氮化物膜。含碳氧化物膜具有低蚀刻速率，使得间隔物结构在蚀刻含碳氧化膜期间具有良好的轮廓。

10. 发明授权

US08288802B2 Spacer structure wherein carbon-containing oxynitride film formed within 有权
标题翻译：其中形成含碳氮氧化物膜的间隔结构
公开(公告)号：US08288802B2
公开(公告)日：2012-10-16
申请号：US11379226
申请日：2006-04-19
申请人： Po-Lun Cheng , Che-Hung Liu
发明人： Po-Lun Cheng , Che-Hung Liu
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/6656
摘要： A spacer structure contains a carbon-containing oxynitride film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxynitride film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxynitride film.
摘要翻译：间隔结构包含位于栅极侧壁上的含碳氧氮化物膜和覆盖含碳氧化物膜的氮化物膜。含碳氮氧化物膜具有低蚀刻速率，使得间隔物结构在蚀刻含碳氮氧化物膜期间可以具有良好的轮廓。

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