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1. 发明授权

US06747523B1 BiFET voltage controlled oscillator 有权
标题翻译： BiFET压控振荡器
公开(公告)号：US06747523B1
公开(公告)日：2004-06-08
申请号：US10324341
申请日：2002-12-19
申请人： Pingxi Ma , Marco Racanelli
发明人： Pingxi Ma , Marco Racanelli
IPC分类号： H03B512
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1243 , H03B2200/0038
摘要： According to one exemplary embodiment, a VCO core circuit is connected across a first node and a second node. The anode of a first varactor is connected to the first node while the anode of a second varactor is connected to the second node, and the cathode of the first varactor is tied to the cathode of the second varactor. A tuning voltage is also connected to the cathode of the first varactor and the cathode of the second varactor. The inductor is connected across the first node and the second node. A first and second bipolar transistors are configured as a differential pair. A first and second FETs are configured in a common-gate configuration. The drain of the first FET comprises a first output of the BiFET VCO circuit, while the drain of the second FET comprises a second output of the BiFET VCO circuit.
摘要翻译：根据一个示例性实施例，VCO核心电路跨越第一节点和第二节点连接。第一变容二极管的阳极连接到第一节点，而第二变容二极管的阳极连接到第二节点，并且第一变容二极管的阴极连接到第二变容二极管的阴极。调谐电压也连接到第一变容二极管的阴极和第二变容二极管的阴极。电感器连接在第一节点和第二节点之间。第一和第二双极晶体管被配置为差分对。第一和第二FET被配置成共栅配置。第一FET的漏极包括BiFET VCO电路的第一输出，而第二FET的漏极包括BiFET VCO电路的第二输出。

2. 发明授权

US06744322B1 High performance BiFET low noise amplifier 有权
标题翻译：高性能BiFET低噪声放大器
公开(公告)号：US06744322B1
公开(公告)日：2004-06-01
申请号：US10057098
申请日：2002-01-23
申请人： Pingxi Ma , Marco Racanelli
发明人： Pingxi Ma , Marco Racanelli
IPC分类号： H03F316
CPC分类号： H03F1/22 , H03F3/189 , H03F2200/294 , H03F2200/372
摘要： According to one exemplary embodiment, a circuit comprises a bipolar transistor having a base, an emitter, and a collector. For example, the bipolar transistor can be an NPN SiGe HBT. The base of the bipolar transistor is an input of the circuit. The emitter of the bipolar transistor is coupled to a first reference voltage. According to this exemplary embodiment, the circuit further comprises a field effect transistor having a gate, a source, and a drain. For example, the field effect transistor may be an NFET. The collector of the bipolar transistor is coupled to the source of the field effect transistor. The gate of the field effect transistor is coupled to a bias voltage. The drain of the field effect transistor is coupled to a second reference voltage. The drain of the field effect transistor is an output of the circuit.
摘要翻译：根据一个示例性实施例，电路包括具有基极，发射极和集电极的双极晶体管。例如，双极晶体管可以是NPN SiGe HBT。双极晶体管的基极是电路的输入。双极晶体管的发射极耦合到第一参考电压。根据该示例性实施例，电路还包括具有栅极，源极和漏极的场效应晶体管。例如，场效应晶体管可以是NFET。双极晶体管的集电极耦合到场效应晶体管的源极。场效应晶体管的栅极耦合到偏置电压。场效应晶体管的漏极耦合到第二参考电压。场效应晶体管的漏极是电路的输出。

3. 发明授权

US06949423B1 MOSFET-fused nonvolatile read-only memory cell (MOFROM) 有权
标题翻译： MOSFET熔接的非易失性只读存储单元（MOFROM）
公开(公告)号：US06949423B1
公开(公告)日：2005-09-27
申请号：US10723004
申请日：2003-11-26
申请人： Pingxi Ma , Daniel Fu
发明人： Pingxi Ma , Daniel Fu
IPC分类号： G11C17/16 , H01L21/28 , H01L21/8247 , H01L23/525 , H01L23/58 , H01L27/115
CPC分类号： H01L23/5256 , G11C17/16 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard CMOS process. The standard MOSFET presents an “OFF” state before the burning and an “ON” state with a stable low-resistance path after the burning.
摘要翻译：通过在浮栅N-MOSFET中直接偏置漏极到源极，通过隧道引起的穿通漏极连接到源极的MOSFET熔断非易失性ROM单元（MOFROM）提供了新的MOSFET熔合非易失性ROM单元（MOFROM）。 MOFROM与主流标准CMOS工艺完全兼容。标准MOSFET在燃烧之前呈现“OFF”状态，在燃烧后具有稳定的低电阻路径的“ON”状态。

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