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    • 4. 发明申请
    • METHODS FOR INPUT-OUTPUT CALIBRATION AND IMAGE RENDERING
    • 输入输出校准和图像渲染方法
    • US20130249864A1
    • 2013-09-26
    • US13426604
    • 2012-03-22
    • Chi-Ling WuYu-Pao TsaiChia-Ping ChenYu-Ting Chen
    • Chi-Ling WuYu-Pao TsaiChia-Ping ChenYu-Ting Chen
    • G06F3/042
    • G06F3/0418G06F3/042
    • One of the embodiments of the invention provides an input-output calibration method performed by a processing unit connected to an output device and an input device. The output device and the input device correspond to an output device coordinate system and an input device coordinate system, respectively. The processing unit first derives M calibration points' coordinates in the input device coordinate system by using the input device to sense a viewer specifying the M calibration points' positions, wherein M is a positive integer. Then, the processing unit uses the M calibration points' coordinates in the output device coordinate system and coordinates in the input device coordinate system to derive the relationship between the output device coordinate system and the input device coordinate system.
    • 本发明的一个实施例提供了一种由连接到输出设备和输入设备的处理单元执行的输入 - 输出校准方法。 输出装置和输入装置分别对应于输出装置坐标系和输入装置坐标系。 处理单元首先通过使用输入装置来感测指定M个校准点位置的观察者来导出输入装置坐标系中的M个校准点的坐标,其中M是正整数。 然后,处理单元使用输出装置坐标系中的M个校准点的坐标和输入装置坐标系中的坐标来导出输出装置坐标系和输入装置坐标系之间的关系。
    • 5. 发明授权
    • Methods for input-output calibration and image rendering
    • 输入输出校准和图像渲染方法
    • US09122346B2
    • 2015-09-01
    • US13426604
    • 2012-03-22
    • Chi-Ling WuYu-Pao TsaiChia-Ping ChenYu-Ting Chen
    • Chi-Ling WuYu-Pao TsaiChia-Ping ChenYu-Ting Chen
    • G06F3/042G06F3/041
    • G06F3/0418G06F3/042
    • One of the embodiments of the invention provides an input-output calibration method performed by a processing unit connected to an output device and an input device. The output device and the input device correspond to an output device coordinate system and an input device coordinate system, respectively. The processing unit first derives M calibration points' coordinates in the input device coordinate system by using the input device to sense a viewer specifying the M calibration points' positions, wherein M is a positive integer. Then, the processing unit uses the M calibration points' coordinates in the output device coordinate system and coordinates in the input device coordinate system to derive the relationship between the output device coordinate system and the input device coordinate system.
    • 本发明的一个实施例提供了一种由连接到输出设备和输入设备的处理单元执行的输入 - 输出校准方法。 输出装置和输入装置分别对应于输出装置坐标系和输入装置坐标系。 处理单元首先通过使用输入装置来感测指定M个校准点位置的观察者来导出输入装置坐标系中的M个校准点的坐标,其中M是正整数。 然后,处理单元使用输出装置坐标系中的M个校准点的坐标和输入装置坐标系中的坐标来导出输出装置坐标系和输入装置坐标系之间的关系。
    • 9. 发明授权
    • Process for preparing schottky diode contacts with predetermined barrier
heights
    • 制备具有预定屏障高度的肖特基二极管触点的工艺
    • US5516725A
    • 1996-05-14
    • US85622
    • 1993-06-30
    • Y. Austin ChangChia-Hong JanChia-Ping Chen
    • Y. Austin ChangChia-Hong JanChia-Ping Chen
    • C22C5/04C22C19/00C23C14/14C23C14/18C23C14/34H01L21/28H01L21/285H01L21/768H01L23/522H01L29/40H01L29/47H01L21/44
    • C23C14/185C22C19/00C22C5/04H01L29/475H01L2924/0002
    • A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.
    • 提供了一种制备具有预先选择的势垒高度phi Bn的肖特基二极管的工艺。 衬底优选为n-GaAs,金属接触源自式[SIGMA Mδ](Al x Ga 1-x)的起始合金,其中:SIGMA M是由至少一个M组成的部分,并且当多于一个 M存在,每个M不同,M是选自镍,钴,钌,铑,铟和铂的Ⅷ族金属,δ是任何给定的SIGMA M部分的总值为1的化学计量系数, x是0和1之间的正数(即x大于0到小于1)。 此外,起始合金能够与基板一起形成二元合金混合物[SIGMA Mδ] Ga - [SIGMA M] Al-AlAs-GaAs的两相平衡互易系统。 当该式中的合金子类的成员各自与可生产的接触层的势垒高度phi Bn初步相关时,则可以通过溅射和退火产生预定的屏障高度的肖特基二极管。 还提供了根据该方法生产的肖特基二极管产品。