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1. 发明授权

US10276738B2 Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same 有权
公开(公告)号：US10276738B2
公开(公告)日：2019-04-30
申请号：US13522901
申请日：2011-01-26
申请人： Pierre Mur , Hubert Moriceau , Pierre-Jean Ribeyron
发明人： Pierre Mur , Hubert Moriceau , Pierre-Jean Ribeyron
IPC分类号： H01L31/18 , H01L31/0745 , H01L31/0747
摘要： A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

2. 发明授权

US08877539B2 Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate 有权
标题翻译：包括制备晶体硅衬底表面的光伏电池的方法
公开(公告)号：US08877539B2
公开(公告)日：2014-11-04
申请号：US13522829
申请日：2011-01-26
申请人： Hubert Moriceau , Pierre Mur , Pierre-Jean Ribeyron
发明人： Hubert Moriceau , Pierre Mur , Pierre-Jean Ribeyron
IPC分类号： H01L31/18 , H01L31/20 , H01L21/306 , H01L31/0236 , H01L31/075
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/075 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.
摘要翻译：至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

3. 发明申请

US20120291861A1 PHOTOVOLTAIC CELL, INCLUDING A CRYSTALLINE SILICON OXIDE PASSIVATION THIN FILM, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：包括晶体氧化硅钝化薄膜的光电池及其制造方法
公开(公告)号：US20120291861A1
公开(公告)日：2012-11-22
申请号：US13522901
申请日：2011-01-26
申请人： Pierre Mur , Hubert Moriceau , Pierre-Jean Ribeyron
发明人： Pierre Mur , Hubert Moriceau , Pierre-Jean Ribeyron
IPC分类号： H01L31/077 , H01L31/0352 , H01L31/18 , H01L31/075
CPC分类号： H01L31/0745 , H01L31/0747 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.
摘要翻译：异质结光伏电池包括直接放置在晶体硅衬底的前表面或后表面之一上的至少一个晶体氧化硅膜，位于所述衬底和非晶或微晶硅层之间。薄膜旨在使得能够钝化基底的所述面。在沉积非晶硅层之前，更特别地通过对衬底的表面部分进行自由基氧化来获得薄膜。此外，可以在所述思维膜和非晶或微晶硅层之间放置本征或微掺杂非晶硅的薄层。

4. 发明申请

US20120288985A1 METHOD FOR PRODUCING A PHOTOVOLTAIC CELL INCLUDING THE PREPARATION OF THE SURFACE OF A CRYSTALLINE SILICON SUBSTRATE 有权
标题翻译：生产光伏电池的方法，包括制备晶体硅衬底的表面
公开(公告)号：US20120288985A1
公开(公告)日：2012-11-15
申请号：US13522829
申请日：2011-01-26
申请人： Hubert Moriceau , Pierre Mur , Pierre-Jean Ribeyron
发明人： Hubert Moriceau , Pierre Mur , Pierre-Jean Ribeyron
IPC分类号： H01L31/0376 , H01L31/0368 , H01L31/0352
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/075 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.
摘要翻译：至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

5. 发明申请

US20060275936A1 Method for production of a semiconductor device with auto-aligned metallisations 失效
标题翻译：用于生产具有自动对准金属化的半导体器件的方法
公开(公告)号：US20060275936A1
公开(公告)日：2006-12-07
申请号：US10555072
申请日：2004-04-27
申请人： Pierre-Jean Ribeyron , Marc Pirot
发明人： Pierre-Jean Ribeyron , Marc Pirot
IPC分类号： H01L21/00
CPC分类号： H01L31/022433 , Y02E10/50
摘要： This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括以下步骤：在半导体衬底的第一主面上形成具有第一类型导电性的掺杂区域，并且至少形成一个窗口，沉积第一金属化区域在掺杂区域上，在至少窗口和第一金属化区域上沉积介电层，在窗口处的电介质层中至少蚀刻第一开口以容纳具有第二类型导电性的掺杂区域，同时布置未掺杂的部分半导体衬底横向于掺杂区域之间，衬底被掺杂以产生具有第二类型导电性的掺杂区域，沉积第二金属化区域。特别适用于薄层太阳能电池。

6. 发明申请

US20150013758A1 PROCESS FOR TREATING A HETEROJUNCTION PHOTOVOLTAIC CELL 审中-公开
标题翻译：用于处理异常光伏电池的方法
公开(公告)号：US20150013758A1
公开(公告)日：2015-01-15
申请号：US14129362
申请日：2012-06-25
申请人： Samuel Harrison , Pierre-Jean Ribeyron
发明人： Samuel Harrison , Pierre-Jean Ribeyron
IPC分类号： H01L31/0747 , H01L31/18 , H01L31/0224 , H01L31/0216
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022433 , H01L31/1804 , H01L31/1864 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： The invention provides a process for treating an n-type photovoltaic cell free from all but trace amounts of boron atoms, said process comprising the following steps: providing an n-type heterojunction photovoltaic cell (10) comprising a central crystalline silicon layer (1) on and under which two passivation layers (2, 3) made of hydrogenated amorphous silicon are deposited; heating this cell to a temperature between 20° C. and 200° C., for example on a hot plate (20) or in an oven (40), while illuminating the photovoltaic cell with a light flux from a light source (30). The efficiency of the photovoltaic cell is thus improved and stabilized.
摘要翻译：本发明提供一种用于处理不含所有微量硼原子的n型光伏电池的方法，所述方法包括以下步骤：提供包含中心晶体硅层（1）的n型异质结光伏电池（10）在其上沉积由氢化非晶硅制成的两个钝化层（2,3）; 在来自光源（30）的光束照射光伏电池的同时，将该电池加热至20℃至200℃之间的温度，例如加热板（20）或烘箱（40）。因此光伏电池的效率得到改善和稳定。

7. 发明授权

US07364938B2 Method for production of a semiconductor device with auto-aligned metallisations 失效
标题翻译：用于生产具有自动对准金属化的半导体器件的方法
公开(公告)号：US07364938B2
公开(公告)日：2008-04-29
申请号：US10555072
申请日：2004-04-27
申请人： Pierre-Jean Ribeyron , Marc Pirot
发明人： Pierre-Jean Ribeyron , Marc Pirot
IPC分类号： H01L21/00
CPC分类号： H01L31/022433 , Y02E10/50
摘要： This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括以下步骤：在半导体衬底的第一主面上形成具有第一类型导电性的掺杂区域，并且至少形成一个窗口，沉积第一金属化区域在掺杂区域上，在至少窗口和第一金属化区域上沉积介电层，在窗口处的电介质层中至少蚀刻第一开口以容纳具有第二类型导电性的掺杂区域，同时布置未掺杂的部分半导体衬底横向于掺杂区域之间，衬底被掺杂以产生具有第二类型导电性的掺杂区域，沉积第二金属化区域。特别适用于薄层太阳能电池。

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