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1. 发明授权

US07605027B2 Method of fabricating a bipolar transistor 失效
标题翻译：制造双极晶体管的方法
公开(公告)号：US07605027B2
公开(公告)日：2009-10-20
申请号：US11913049
申请日：2006-04-24
申请人： Philippe Meunier-Beillard , Erwin Hijzen , Johannes J. T. M. Donkers , Francois Neuilly
发明人： Philippe Meunier-Beillard , Erwin Hijzen , Johannes J. T. M. Donkers , Francois Neuilly
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66272 , H01L29/0821
摘要： A method of fabricating a bipolar transistor in a first trench (11) is disclosed wherein only one photolithographic mask is applied which forms a first trench (11) and a second trench (12). A collector region (21) is formed self-aligned in the first trench (11) and the second trench (12). A base region (31) is formed self-aligned on a portion of the collector region (21), which is in the first trench (11). An emitter region (41) is formed self-aligned on a portion of the base region (31). A contact to the collector region (21) is formed in the second trench (12) and a contact to the base region (31) is formed in the first trench (11). The fabrication of the bipolar transistor may be integrated in a standard CMOS process.
摘要翻译：公开了在第一沟槽（11）中制造双极晶体管的方法，其中仅施加一个形成第一沟槽（11）和第二沟槽（12）的光刻掩模。集电极区域（21）在第一沟槽（11）和第二沟槽（12）中自对准地形成。基部区域（31）在位于第一沟槽（11）中的集电极区域（21）的一部分上自对准地形成。发射极区域（41）在基极区域（31）的一部分上自对准地形成。在所述第二沟槽（12）中形成与所述集电极区域（21）的接触，并且在所述第一沟槽（11）中形成与所述基部区域（31）的接触。双极晶体管的制造可以集成在标准CMOS工艺中。

2. 发明授权

US08431966B2 Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby 有权
标题翻译：制造双极晶体管半导体器件的方法和由此获得的半导体器件
公开(公告)号：US08431966B2
公开(公告)日：2013-04-30
申请号：US12994113
申请日：2009-05-11
申请人： Philippe Meunier-Beillard , Erwin Hijzen , Johannes J. T. M. Donkers
发明人： Philippe Meunier-Beillard , Erwin Hijzen , Johannes J. T. M. Donkers
IPC分类号： H01L21/33 , H01L29/732
CPC分类号： H01L29/7378 , H01L29/66242
摘要： Methods for manufacturing a bipolar transistor semiconductor device are described, along with devices fabricated in accordance with the methods. The methods include the steps of forming a stack of layers over a semiconductor body comprising a window definition layer (18,38), a layer (20) of semiconductor material, a first insulating layer (22), and a second insulating layer (24) which is selectively etchable with respect to the first insulating layer. A trench (26) is then etched into the stack down to the window definition layer. The portion of the trench extending through the second insulating layer is widened to form a wider trench portion (28) therethrough. A window (36) is defined in the window definition layer which is aligned with the wider trench portion, and serves to define the base-collector or base-emitter junction in the finished device.
摘要翻译：描述了制造双极晶体管半导体器件的方法以及根据该方法制造的器件。所述方法包括以下步骤：在半导体主体上形成层叠层，其包括窗口界定层（18,38），半导体材料层（20），第一绝缘层（22）和第二绝缘层（24）），其相对于第一绝缘层可选择性地蚀刻。然后将沟槽（26）蚀刻到堆叠中，直到窗口定义层。延伸穿过第二绝缘层的沟槽的部分被加宽以形成穿过其中的较宽的沟槽部分（28）。在窗口定义层中限定窗口（36），其与较宽的沟槽部分对准，并且用于限定最终器件中的基极 - 集电极或基极 - 发射极结。

3. 发明授权

US08476675B2 Semiconductor device and method of manufacture thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08476675B2
公开(公告)日：2013-07-02
申请号：US12918524
申请日：2009-02-26
申请人： Philippe Meunier-Beillard , Johannes J. T. M. Donkers , Erwin Hijzen
发明人： Philippe Meunier-Beillard , Johannes J. T. M. Donkers , Erwin Hijzen
IPC分类号： H01L29/66
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0649 , H01L29/0821 , H01L29/1004 , H01L29/165 , H01L29/42304 , H01L29/456 , H01L29/66242 , H01L29/7378
摘要： A semiconductor device (10) comprising a bipolar transistor and a field 5 effect transistor within a semiconductor body (1) comprising a projecting mesa (5) within which are at least a portion of a collector region (22c and 22d) and a base region (33c) of the bipolar transistor. The bipolar transistor is provided with an insulating cavity (92b) provided in the collector region (22c and 22d). The insulating cavity (92b) may be provided by providing a layer (33a) in the collector region (22c), creating an access path, for example by selectively etching polysilicon towards monocrystalline, and removing a portion of the layer (33a) to provide the cavity using the access path. The layer (33a) provided in the collector region may be of SiGe:C. By blocking diffusion from the base region the insulating cavity (92b) provides a reduction in the base collector capacitance and can be described as defining the base contact.
摘要翻译：一种半导体器件（10），包括在半导体本体（1）内的双极晶体管和场效应晶体管，包括突出的台面（5），其中集电极区域（22c和22d）的至少一部分和基极区域（33c）。双极晶体管设置有设置在集电区域（22c和22d）中的绝缘腔（92b）。可以通过在集电极区域（22c）中设置层（33a）来提供绝缘腔（92b），从而产生存取路径，例如通过选择性地将多晶硅蚀刻成单晶，并去除层（33a）的一部分以提供使用进入路径的空腔。设置在集电区域中的层（33a）可以是SiGe：C。通过阻挡从基极区域的扩散，绝缘腔（92b）提供基极集电极电容的减小，并且可以被描述为限定基极接触。

4. 发明授权

US08481365B2 MEMS devices 有权
标题翻译： MEMS器件
公开(公告)号：US08481365B2
公开(公告)日：2013-07-09
申请号：US12995100
申请日：2009-05-19
申请人： Greja J. A. M. Verhelijden , Philippe Meunier-Beillard , Johannes J. T. M. Donkers
发明人： Greja J. A. M. Verhelijden , Philippe Meunier-Beillard , Johannes J. T. M. Donkers
IPC分类号： H01L21/00 , H01L23/06
CPC分类号： B81C1/00293 , B81C2203/0145
摘要： A method of manufacturing a MEMS device comprises forming a MEMS device element (14). A sacrificial layer (20) is provided over the device element and a package cover layer (22) is provided over the sacrificial layer. The sacrificial layer is removed using at least one opening (22) in the cover layer and the at least one opening (24) is sealed by an anneal process.
摘要翻译：制造MEMS器件的方法包括形成MEMS器件元件（14）。牺牲层（20）设置在器件元件上方，并且封装覆盖层（22）设置在牺牲层上。使用覆盖层中的至少一个开口（22）去除牺牲层，并且通过退火工艺密封至少一个开口（24）。

5. 发明授权

US08541812B2 Semiconductor device and method of manufacture thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08541812B2
公开(公告)日：2013-09-24
申请号：US12918542
申请日：2009-02-26
申请人： Philippe Meunier-Beillard , Mark C. J. C. M. Kramer , Johannes J. T. M. Donkers , Guillaume Boccardi
发明人： Philippe Meunier-Beillard , Mark C. J. C. M. Kramer , Johannes J. T. M. Donkers , Guillaume Boccardi
IPC分类号： H01L29/66
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0649 , H01L29/0821 , H01L29/1004 , H01L29/165 , H01L29/42304 , H01L29/456 , H01L29/66242 , H01L29/7378
摘要： A semiconductor device (10) comprising a bipolar transistor and a field effect transistor within a semiconductor body (1) comprising a projecting mesa (5) within which are at least a portion of a collector region (22d and 22e) and a base region (33d) of the bipolar transistor. The bipolar transistor is provided with a first insulating cavity (92) provided in the collector region (22d and 22e). The base region (33d) is narrower in the plane of the substrate than the collector region (22d and 22e) due to a second insulating cavity (94) provided around the base region (33d) and between the collector region (22d and 22e) and the emitter region (4). By blocking diffusion from the base region the first insulating cavity (92) provides a reduction in the base collector capacitance and can be described as defining the base contact.
摘要翻译：一种半导体器件（10），包括半导体本体（1）内的双极晶体管和场效应晶体管，所述半导体本体（1）包括突出台面（5），所述突出台面（5）中至少一部分为集电极区域（22d和22e）和基极区域 33d）。双极晶体管设置有设置在集电区域（22d和22e）中的第一绝缘腔（92）。基极区域（33d）由于设置在基极区域（33d）周围的第二绝缘腔（94d）和集电极区域（22d〜22e）之间，在基板的平面内比集电体区域（22d，22e）窄，和发射极区域（4）。通过阻挡来自基极区域的扩散，第一绝缘腔（92）提供基极集电极电容的减小并且可以被描述为限定基极触点。

6. 发明申请

US20110198746A1 MEMS DEVICES 有权
标题翻译： MEMS器件
公开(公告)号：US20110198746A1
公开(公告)日：2011-08-18
申请号：US12995100
申请日：2009-05-19
申请人： Greja J. A. M. Verhelijden , Philippe Meunier-Beillard , Johannes J. T. M. Donkers
发明人： Greja J. A. M. Verhelijden , Philippe Meunier-Beillard , Johannes J. T. M. Donkers
IPC分类号： H01L29/02 , H01L21/50
CPC分类号： B81C1/00293 , B81C2203/0145
摘要： A method of manufacturing a MEMS device comprises forming a MEMS device element (14). A sacrificial layer (20) is provided over the device element and a package cover layer (22) is provided over the sacrificial layer. The sacrificial layer is removed using at least one opening (22) in the cover layer and the at least one opening (24) is sealed by an anneal process.
摘要翻译：制造MEMS器件的方法包括形成MEMS器件元件（14）。牺牲层（20）设置在器件元件上方，并且封装覆盖层（22）设置在牺牲层上。使用覆盖层中的至少一个开口（22）去除牺牲层，并且通过退火工艺密封至少一个开口（24）。

7. 发明申请

US20100025808A1 Bipolar Transistor And Method Of Fabricating The Same 有权
标题翻译：双极晶体管及其制造方法
公开(公告)号：US20100025808A1
公开(公告)日：2010-02-04
申请号：US11814281
申请日：2006-01-12
申请人： Johannes J. T. M. Donkers , Wibo D. Van Noort , Philippe Meunier-Beillard
发明人： Johannes J. T. M. Donkers , Wibo D. Van Noort , Philippe Meunier-Beillard
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/66242 , H01L29/66272 , H01L29/732 , H01L29/7378
摘要： The invention provides a bipolar transistor with a reduced collector series resistance integrated in a trench (4, 44) of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region (6, 34) manufactured in one fabrication step, therefore having a shorter conductive path with a reduced collector series resistance, improving the high frequency performance of the bipolar transistor. The bipolar transistor further includes a base region (8, 22, 38) with a first part on a selected portion of the collector region (6, 34), which is on the bottom of the trench (4, 44), and an emitter region (10, 24, 39) on a selected portion of the first part of the base region (8, 22, 38). A base contact (11, 26, 51) electrically contacts the base region (8, 22, 38) on a second part of the base region (8, 22, 38), which is on an insulating region (2, 42). The collector region (6, 34) is electrically contacted on top of a protrusion (5, 45) with a collector contact (13, 25, 50).
摘要翻译：本发明提供了集成在标准CMOS浅沟槽隔离区的沟槽（4,44）中的集电极串联电阻降低的双极晶体管。双极晶体管包括在一个制造步骤中制造的集电极区域（6,34），因此具有较短的集电极串联电阻的导电路径，从而改善了双极晶体管的高频性能。双极晶体管还包括在沟槽（4,44）的底部上的集电极区域（6,34）的选定部分上的第一部分的基极区域（8,22,38）和发射极区域（10,24,39）在基区（8,22,38）的第一部分的选定部分上。在绝缘区域（2,42）上的基极区域（8,22,38）的第二部分上的基极接触部分（11,26,31）与基极区域（8,22,38）电接触。集电区域（6,34）与突起（5,45）的顶部与集电极接触（13,25,50）电接触。

8. 发明授权

US07618858B2 Method of fabricating a heterojunction bipolar transistor 有权
标题翻译：异质结双极晶体管的制造方法
公开(公告)号：US07618858B2
公开(公告)日：2009-11-17
申请号：US11911620
申请日：2006-04-03
申请人： Philippe Meunier-Beillard , Johannes J. T. M. Donkers , Hijzen Erwin , Melai Joost
发明人： Philippe Meunier-Beillard , Johannes J. T. M. Donkers , Hijzen Erwin , Melai Joost
IPC分类号： H01L21/8249
CPC分类号： H01L29/66242 , H01L29/16 , H01L29/7378
摘要： The invention provides a method for fabricating a heterojunction bipolar transistor with a base connecting region (23), which is formed self-aligned to a base region (7) without applying photolithographic techniques. Further, a collector connecting region (31) and an emitter region (29) are formed simultaneously and self-aligned to the base connecting region (23) without applying photolithographic techniques.
摘要翻译：本发明提供了一种用于制造具有基极连接区域（23）的异质结双极晶体管的方法，该基极连接区域在不施加光刻技术的情况下自形成于基极区域（7）。此外，在不使用光刻技术的情况下，集电极连接区域（31）和发射极区域（29）同时形成并且与基底连接区域（23）自对准。

9. 发明申请

US20100022056A1 METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR 有权
标题翻译：制造双极晶体管的方法
公开(公告)号：US20100022056A1
公开(公告)日：2010-01-28
申请号：US12439363
申请日：2007-08-29
申请人： Johannes J. T. M. Donkers , Sebastien Nuttinck , Guillaume L. R. Boccardi , Francois Neuilly
发明人： Johannes J. T. M. Donkers , Sebastien Nuttinck , Guillaume L. R. Boccardi , Francois Neuilly
IPC分类号： H01L21/331
CPC分类号： H01L29/7378 , H01L29/407 , H01L29/66242
摘要： The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate (17) in a trench (7) adjacent to a collector region (21), which field plate (17) employs a reduced surface field (Resurf) effect. The Resurf effect reshapes the electric field distribution in the collector region (21) such that for the same collector-base breakdown voltage the doping concentration of the collector region (21) can effectively be increased resulting in a reduced collector resistance and hence an increased bipolar transistor speed. The method comprises a step of forming a base window (6) in a first base layer (4) thereby exposing a top surface of the collector region (21) and a part of an isolation region (3). The trench (7) is formed by removing the exposed part of the isolation region (3), after which isolation layers (9,10) are formed on the surface of the trench (7). A second base layer (13) is formed on the isolation layer (10), thereby forming the field plate (17), on the top surface of the collector region (21), thereby forming a base region (31), and on a sidewall of the first base layer (4), thereby forming an electrical connection between the first base layer (4), the base region (31) and the field plate (17). An emitter region (41) is formed on a top part of the base region (31), thereby forming the Resurf bipolar transistor.
摘要翻译：本发明提供了制造双极晶体管的替代和较不复杂的方法，其包括在与集电极区域（21）相邻的沟槽（7）中的场板（17），该场板（17）采用减小的表面场（Resurf ）效果。 Resurf效应重塑了集电极区域（21）中的电场分布，使得对于相同的集电极 - 基极击穿电压，可以有效地增加集电极区域（21）的掺杂浓度，从而降低集电极电阻，从而增加双极性晶体管速度。该方法包括在第一基层（4）中形成基窗（6）从而暴露集电区（21）的顶表面和隔离区（3）的一部分的步骤。通过去除隔离区域（3）的露出部分形成沟槽（7），之后隔离层（9,10）形成在沟槽（7）的表面上。在隔离层（10）上形成第二基层（13），从而在集电区域（21）的顶面上形成场板（17），从而形成基极区域（31）从而在第一基底层（4），基底区域（31）和场板（17）之间形成电连接。在基极区域（31）的顶部形成发射极区域（41），从而形成Resurf双极型晶体管。

10. 发明授权

US08026146B2 Method of manufacturing a bipolar transistor 有权
标题翻译：制造双极晶体管的方法
公开(公告)号：US08026146B2
公开(公告)日：2011-09-27
申请号：US12439363
申请日：2007-08-29
申请人： Johannes J. T. M. Donkers , Sebastien Nuttinck , Guillaume L. R. Boccardi , Francois Neuilly
发明人： Johannes J. T. M. Donkers , Sebastien Nuttinck , Guillaume L. R. Boccardi , Francois Neuilly
IPC分类号： H01L21/8222
CPC分类号： H01L29/7378 , H01L29/407 , H01L29/66242
摘要： The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate (17) in a trench (7) adjacent to a collector region (21), which field plate (17) employs a reduced surface field (Resurf) effect. The Resurf effect reshapes the electric field distribution in the collector region (21) such that for the same collector-base breakdown voltage the doping concentration of the collector region (21) can effectively be increased resulting in a reduced collector resistance and hence an increased bipolar transistor speed. The method comprises a step of forming a base window (6) in a first base layer (4) thereby exposing a top surface of the collector region (21) and a part of an isolation region (3). The trench (7) is formed by removing the exposed part of the isolation region (3), after which isolation layers (9,10) are formed on the surface of the trench (7). A second base layer (13) is formed on the isolation layer (10), thereby forming the field plate (17), on the top surface of the collector region (21), thereby forming a base region (31), and on a sidewall of the first base layer (4), thereby forming an electrical connection between the first base layer (4), the base region (31) and the field plate (17). An emitter region (41) is formed on a top part of the base region (31), thereby forming the Resurf bipolar transistor.
摘要翻译：本发明提供了制造双极晶体管的替代和较不复杂的方法，其包括在与集电极区域（21）相邻的沟槽（7）中的场板（17），该场板（17）采用减小的表面场（Resurf ）效果。 Resurf效应重塑了集电极区域（21）中的电场分布，使得对于相同的集电极 - 基极击穿电压，可以有效地增加集电极区域（21）的掺杂浓度，从而降低集电极电阻，从而增加双极性晶体管速度。该方法包括在第一基层（4）中形成基窗（6）从而暴露集电区（21）的顶表面和隔离区（3）的一部分的步骤。通过去除隔离区域（3）的露出部分形成沟槽（7），之后隔离层（9,10）形成在沟槽（7）的表面上。在隔离层（10）上形成第二基层（13），从而在集电区域（21）的顶面上形成场板（17），从而形成基极区域（31）从而在第一基底层（4），基底区域（31）和场板（17）之间形成电连接。在基极区域（31）的顶部形成发射极区域（41），从而形成Resurf双极型晶体管。

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