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1. 发明授权

US07368045B2 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow 有权
标题翻译：通过电化学处理利用栅极 - 电介质电流流动的栅堆叠工程
公开(公告)号：US07368045B2
公开(公告)日：2008-05-06
申请号：US11050790
申请日：2005-01-27
申请人： Philippe M. Vereecken , Veeraraghavan S. Basker , Cyril Cabral, Jr. , Emanuel I. Cooper , Hariklia Deligianni , Martin M. Frank , Rajarao Jammy , Vamsi Krishna Paruchuri , Katherine L. Saenger , Xiaoyan Shao
发明人： Philippe M. Vereecken , Veeraraghavan S. Basker , Cyril Cabral, Jr. , Emanuel I. Cooper , Hariklia Deligianni , Martin M. Frank , Rajarao Jammy , Vamsi Krishna Paruchuri , Katherine L. Saenger , Xiaoyan Shao
IPC分类号： C25D5/02 , C25D11/04
CPC分类号： H01L21/2885 , C25D3/50 , C25D5/02 , C25D5/024 , C25D5/54 , C25D7/123 , C25D9/04 , C25F3/14 , H01L21/28079 , H01L21/28114 , H01L21/76885 , H01L29/513 , H01L29/517 , H01L29/78648
摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.
摘要翻译：提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或熔化。还提供了利用电介质电流流动的电介质电化学修饰方法。

2. 发明授权

US07868410B2 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow 有权
标题翻译：通过电化学处理利用栅极 - 电介质电流流动的栅堆叠工程
公开(公告)号：US07868410B2
公开(公告)日：2011-01-11
申请号：US12040350
申请日：2008-02-29
申请人： Philippe M. Vereecken , Veeraraghavan S. Basker , Cyril Cabral, Jr. , Emanuel I. Cooper , Hariklia Deligianni , Martin M. Frank , Rajarao Jammy , Vamsi Krishna Paruchuri , Katherine L. Saenger , Xiaoyan Shao
发明人： Philippe M. Vereecken , Veeraraghavan S. Basker , Cyril Cabral, Jr. , Emanuel I. Cooper , Hariklia Deligianni , Martin M. Frank , Rajarao Jammy , Vamsi Krishna Paruchuri , Katherine L. Saenger , Xiaoyan Shao
IPC分类号： H01L21/70
CPC分类号： H01L21/2885 , C25D3/50 , C25D5/02 , C25D5/024 , C25D5/54 , C25D7/123 , C25D9/04 , C25F3/14 , H01L21/28079 , H01L21/28114 , H01L21/76885 , H01L29/513 , H01L29/517 , H01L29/78648
摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.
摘要翻译：提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或熔化。还提供了利用电介质电流流动的电介质电化学修饰方法。

3. 发明申请

US20080142894A1 GATE STACK ENGINEERING BY ELECTROCHEMICAL PROCESSING UTILIZING THROUGH-GATE-DIELECTRIC CURRENT FLOW 有权
标题翻译：通过电化学处理利用栅极电介质电流流动的栅极堆叠工程
公开(公告)号：US20080142894A1
公开(公告)日：2008-06-19
申请号：US12040350
申请日：2008-02-29
申请人： Philippe M. Vereecken , Veeraraghavan S. Basker , Cyril Cabral , Emanuel I. Cooper , Hariklia Deligianni , Martin M. Frank , Rajarao Jammy , Vamsi Krishna Paruchuri , Katherine L. Saenger , Xiaoyan Shao
发明人： Philippe M. Vereecken , Veeraraghavan S. Basker , Cyril Cabral , Emanuel I. Cooper , Hariklia Deligianni , Martin M. Frank , Rajarao Jammy , Vamsi Krishna Paruchuri , Katherine L. Saenger , Xiaoyan Shao
IPC分类号： H01L27/088 , H01L29/423
CPC分类号： H01L21/2885 , C25D3/50 , C25D5/02 , C25D5/024 , C25D5/54 , C25D7/123 , C25D9/04 , C25F3/14 , H01L21/28079 , H01L21/28114 , H01L21/76885 , H01L29/513 , H01L29/517 , H01L29/78648
摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.
摘要翻译：提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或熔化。还提供了利用电介质电流流动的电介质电化学修饰方法。

4. 发明授权

US07944006B2 Metal gate electrode stabilization by alloying 有权
标题翻译：金属栅电极通过合金化稳定
公开(公告)号：US07944006B2
公开(公告)日：2011-05-17
申请号：US12014511
申请日：2008-01-15
申请人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
发明人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
IPC分类号： H01L29/78
CPC分类号： C25D3/567 , C25D5/02 , C25D7/12 , H01L21/28079 , H01L21/28088 , H01L21/28176 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.
摘要翻译：公开了用于互补金属氧化物半导体（“CMOS”）应用的稳定金属栅极电极和制造稳定的金属栅电极的方法。具体地说，金属栅电极通过合金化来稳定化，其中合金包括选自Re，Ru，Pt，Rh，Ni，Al及其组合的金属和选自W，V，Ti ，Ta及其组合。

5. 发明授权

US09129099B1 Portable health record system and method 有权
标题翻译：便携式健康记录系统和方法
公开(公告)号：US09129099B1
公开(公告)日：2015-09-08
申请号：US13211911
申请日：2011-08-17
申请人： Vamsi Krishna Paruchuri
发明人： Vamsi Krishna Paruchuri
IPC分类号： G06F21/00 , G06F21/30 , G06F21/62
CPC分类号： G06F21/30 , G06F19/00 , G06F21/6245 , G06F2221/2153 , G16H10/60 , G16H10/65
摘要： A Privacy Preserving Portable Health Record (P3HR) based on Smart Enterprise Guardian (SEG) that incorporates smart card security and advanced flash storage encryption technology gives a patient the flexibility of using the services of a variety of generally unrelated healthcare practitioners and providers with control over their health records and the ability to provide comprehensive access to the patient's health records as would occur in a centralized clinic setting to in effect create a virtual medical clinic. The security architecture of the P3HR serves a group of medical patients, healthcare practitioners, and other associated providers such as hospitals and insurance providers. The system provides for continuously updated healthcare history of patients in a remote update server and on portable access devices, which are carried by patients.
摘要翻译：基于智能企业监护人（SEG）的智能卡安全保护和高级闪存存储加密技术的隐私保护便携式健康记录（P3HR）为患者提供了灵活性，可以使用各种普遍无关的医疗保健从业人员和提供商的服务进行控制他们的健康记录和能够全面访问患者健康记录的能力，这将在集中诊所设置中发生，从而实际上创建了一个虚拟医疗诊所。 P3HR的安全架构服务于一群医疗病人，保健医生和其他相关提供者，如医院和保险提供者。该系统提供远程更新服务器和由患者承载的便携式访问设备上的患者的持续更新的医疗保健历史。

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