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1. 发明授权

US09039907B2 Methods for improving integrated photonic device uniformity 有权
标题翻译：提高集成光子器件均匀性的方法
公开(公告)号：US09039907B2
公开(公告)日：2015-05-26
申请号：US13552506
申请日：2012-07-18
申请人： Philippe Absil , Shankar Kumar Selvaraja
发明人： Philippe Absil , Shankar Kumar Selvaraja
IPC分类号： G01L21/30 , G01N21/95 , H01L21/66
CPC分类号： G01N21/9501 , G01B2210/56 , H01L22/12 , H01L22/20
摘要： A method is described for improving the uniformity over a predetermined substrate area of a spectral response of photonic devices fabricated in a thin device layer. The method includes (i) establishing an initial device layer thickness map for the predetermined area, (ii) establishing a linewidth map for the predetermined area, and (iii) establishing an etch depth map for the predetermined area. The method further includes, based on the initial device layer thickness map, the linewidth map and the etch depth map, calculating an optimal device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account photonic device design data. Still further, the method includes performing a location specific corrective etch process in accordance with the thickness correction map.
摘要翻译：描述了一种用于改善在薄的器件层中制造的光子器件的光谱响应的预定衬底区域上的均匀性的方法。该方法包括（i）建立用于预定区域的初始装置层厚度图，（ii）建立预定区域的线宽图，（iii）建立预定区域的蚀刻深度图。该方法还包括基于初始器件层厚度图，线宽图和蚀刻深度图，计算最佳器件层厚度图和用于预定衬底区域的相应厚度校正图，同时考虑光子器件设计数据。此外，该方法包括根据厚度校正图进行位置特定的校正蚀刻处理。

2. 发明申请

US20130023067A1 Methods for Improving Integrated Photonic Device Uniformity 有权
标题翻译：提高集成光子器件均匀性的方法
公开(公告)号：US20130023067A1
公开(公告)日：2013-01-24
申请号：US13552506
申请日：2012-07-18
申请人： Philippe Absil , Shankar Kumar Selvaraja
发明人： Philippe Absil , Shankar Kumar Selvaraja
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01B2210/56 , H01L22/12 , H01L22/20
摘要： A method is described for improving the uniformity over a predetermined substrate area of a spectral response of photonic devices fabricated in a thin device layer. The method includes (i) establishing an initial device layer thickness map for the predetermined area, (ii) establishing a linewidth map for the predetermined area, and (iii) establishing an etch depth map for the predetermined area. The method further includes, based on the initial device layer thickness map, the linewidth map and the etch depth map, calculating an optimal device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account photonic device design data. Still further, the method includes performing a location specific corrective etch process in accordance with the thickness correction map.
摘要翻译：描述了一种用于改善在薄的器件层中制造的光子器件的光谱响应的预定衬底区域上的均匀性的方法。该方法包括（i）建立用于预定区域的初始装置层厚度图，（ii）建立预定区域的线宽图，（iii）建立预定区域的蚀刻深度图。该方法还包括基于初始器件层厚度图，线宽图和蚀刻深度图，计算最佳器件层厚度图和用于预定衬底区域的相应厚度校正图，同时考虑光子器件设计数据。此外，该方法包括根据厚度校正图进行位置特定的校正蚀刻处理。

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