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1. 发明申请

US20100025786A1 Method for Manufacturing a Diaphragm on a Semiconductor Substrate and Micromechanical Component Having Such a Diaphragm 审中-公开
标题翻译：在半导体基板上制造隔膜的方法和具有这种隔膜的微机械元件
公开(公告)号：US20100025786A1
公开(公告)日：2010-02-04
申请号：US12086951
申请日：2006-11-15
申请人： Peter Schmollngruber , Hans Artmann , Thomas Wagner , Heribert Weber
发明人： Peter Schmollngruber , Hans Artmann , Thomas Wagner , Heribert Weber
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81C1/00158 , B81B3/0081 , B81C2201/014
摘要： A method for manufacturing a diaphragm, on a semiconductor substrate, includes the method operations or tasks of a) providing a semiconductor substrate, b) producing trenches in the semiconductor substrate, webs made of semiconductor substrate remaining between the trenches, c) producing an oxide layer on the walls of the trenches with the aid of a thermal oxidation method, d) producing access openings in a cover layer produced in a preceding method operation or task on the semiconductor substrate, to expose the semiconductor substrate in the area of the webs, e) isotropic etching of the semiconductor substrate exposed in method operation or task d) using a method selective to the oxide layer and to the cover layer, at least one cavity being produced in the webs below the cover layer, which is laterally delimited by the oxide layer of at least one trench, and f) depositing a sealing layer to seal the access openings in the cover layer.
摘要翻译：一种在半导体衬底上制造隔膜的方法包括以下方法操作或任务：a）提供半导体衬底，b）在半导体衬底中制造沟槽，保留在沟槽之间的由半导体衬底制成的网，c）产生氧化物借助于热氧化方法在沟槽的壁上形成层; d）在半导体衬底上的前述方法操作或任务中产生的覆盖层中产生进入开口，以在幅材的区域中露出半导体衬底， e）在方法操作或任务中暴露的半导体衬底的各向同性蚀刻d）使用对氧化物层和覆盖层选择性的方法，在覆盖层下方的纤维网中产生至少一个空腔，氧化物层，以及f）沉积密封层以密封覆盖层中的进入开口。

2. 发明申请

US20100176469A1 MICROMECHANICAL COMPONENT AND METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT 有权
标题翻译：微生物组分和生产微生物组分的方法
公开(公告)号：US20100176469A1
公开(公告)日：2010-07-15
申请号：US12451315
申请日：2008-05-26
申请人： Peter Schmollngruber , Hans Artmann , Thomas Wagner
发明人： Peter Schmollngruber , Hans Artmann , Thomas Wagner
IPC分类号： H01L29/84 , H01L21/302
CPC分类号： B81B7/0006 , B81B2201/0264 , B81B2203/0127 , H01L21/76898 , H01L23/481 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A micromechanical component includes a substrate that has a front side and a backside, the front side having a functional pattern, which functional pattern is electrically contacted to the backside in a contact region. The substrate has at least one contact hole in the contact region, which extends into the substrate, starting from the backside.
摘要翻译：微机械部件包括具有前侧和后侧的基板，前侧具有功能图案，该功能图案在接触区域中电接触背面。衬底在接触区域中具有至少一个接触孔，其从背面开始延伸到衬底中。

3. 发明授权

US08076739B2 Micromechanical component and method for producing a micromechanical component 有权
标题翻译：微机械部件及其制造方法
公开(公告)号：US08076739B2
公开(公告)日：2011-12-13
申请号：US12451315
申请日：2008-05-26
申请人： Peter Schmollngruber , Hans Artmann , Thomas Wagner
发明人： Peter Schmollngruber , Hans Artmann , Thomas Wagner
IPC分类号： H01L29/84
CPC分类号： B81B7/0006 , B81B2201/0264 , B81B2203/0127 , H01L21/76898 , H01L23/481 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A micromechanical component includes a substrate that has a front side and a backside, the front side having a functional pattern, which functional pattern is electrically contacted to the backside in a contact region. The substrate has at least one contact hole in the contact region, which extends into the substrate, starting from the backside.
摘要翻译：微机械部件包括具有前侧和后侧的基板，前侧具有功能图案，该功能图案在接触区域中与背面电接触。衬底在接触区域中具有至少一个接触孔，其从背面开始延伸到衬底中。

4. 发明授权

US08299549B2 Layer structure for electrical contacting of semiconductor components 有权
标题翻译：用于半导体部件的电接触的层结构
公开(公告)号：US08299549B2
公开(公告)日：2012-10-30
申请号：US12953086
申请日：2010-11-23
申请人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
发明人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
IPC分类号： H01L29/84
CPC分类号： H01L23/53252 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05669 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48669 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01041 , H01L2924/01068 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/05042 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer.
摘要翻译：用于具有集成电路元件的半导体部件和用于电路元件的集成连接线的电接触的层结构，其特别适用于化学侵蚀性环境和高温下，即在所谓的恶劣环境中，并且实现简单。该层结构包括至少一个贵金属层，其中形成至少一个结合岛，所述贵金属层通过至少一个电介质层与半导体组件的衬底电绝缘，并且具有至少一个欧姆接触贵金属层和集成连接线。贵金属层直接施加在欧姆接触层上。

5. 发明申请

US20110127674A1 LAYER STRUCTURE FOR ELECTRICAL CONTACTING OF SEMICONDUCTOR COMPONENTS 有权
标题翻译：半导体元件电气接触层结构
公开(公告)号：US20110127674A1
公开(公告)日：2011-06-02
申请号：US12953086
申请日：2010-11-23
申请人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
发明人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
IPC分类号： H01L23/532
CPC分类号： H01L23/53252 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05669 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48669 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01041 , H01L2924/01068 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/05042 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer.
摘要翻译：用于具有集成电路元件的半导体部件和用于电路元件的集成连接线的电接触的层结构，其特别适合用于化学侵蚀性环境和高温下，即在所谓的“恶劣环境，“而且易于实现。该层结构包括至少一个贵金属层，其中形成至少一个结合岛，所述贵金属层通过至少一个电介质层与半导体组件的衬底电绝缘，并且具有至少一个欧姆接触贵金属层和集成连接线。贵金属层直接施加在欧姆接触层上。

6. 发明授权

US08196474B2 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US08196474B2
公开(公告)日：2012-06-12
申请号：US12846423
申请日：2010-07-29
申请人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
发明人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
IPC分类号： G01L7/00
CPC分类号： G01L19/148 , G01L19/0061 , G01L19/147 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/00014
摘要： A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part.
摘要翻译：简单实现接触变体使得可以在传感器元件和压力传感器的评估电子器件之间创建可靠的电连接，包括至少一个耐介质传感器元件，至少一个附加部件连接形式的评估电子器件电传送到传感器元件和多部分壳体，传感器元件位于具有至少一个压力连接的第一壳体区域中，并且评估电子设备位于第二密封壳体区域中，该第二密封壳体区域与第一壳体区域分离分隔墙。传感器元件和评估电子元件之间的电连接以不受介质影响的接合线的形式实现，该接合线通过隔离壁和附加壳体部分之间的接合接合区域从第一壳体引导到第二壳体区域。

7. 发明申请

US20110048137A1 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US20110048137A1
公开(公告)日：2011-03-03
申请号：US12846423
申请日：2010-07-29
申请人： Jochen REINMUTH , Peter Schmollngruber , Hans Artmann
发明人： Jochen REINMUTH , Peter Schmollngruber , Hans Artmann
IPC分类号： G01L7/00
CPC分类号： G01L19/148 , G01L19/0061 , G01L19/147 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/00014
摘要： A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part.
摘要翻译：简单实现接触变体使得可以在传感器元件和压力传感器的评估电子器件之间创建可靠的电连接，包括至少一个耐介质传感器元件，至少一个附加部件连接形式的评估电子器件电传送到传感器元件和多部分壳体，传感器元件位于具有至少一个压力连接的第一壳体区域中，并且评估电子设备位于第二密封壳体区域中，该第二密封壳体区域与第一壳体区域分离分隔墙。传感器元件和评估电子元件之间的电连接以不受介质影响的接合线的形式实现，该接合线通过隔离壁和附加壳体部分之间的接合接合区域从第一壳体引导到第二壳体区域。

8. 发明授权

US07095596B2 Magnetoresistive sensor element and method for reducing the angular error of a magnetoresistive sensor element 有权
标题翻译：磁阻传感器元件和减小磁阻传感器元件角度误差的方法
公开(公告)号：US07095596B2
公开(公告)日：2006-08-22
申请号：US10535475
申请日：2003-10-09
申请人： Peter Schmollngruber , Ingo Herrmann , Henrik Siegle , Hartmut Kittel , Paul Farber , Ulrich May
发明人： Peter Schmollngruber , Ingo Herrmann , Henrik Siegle , Hartmut Kittel , Paul Farber , Ulrich May
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093
摘要： A magnetoresistive sensor element is provided, having a magnetoresistive layer system which, in top view, is at least regionally striated. The sensor element operates on the basis of the GMR effect and is constructed according to the spin valve principle, the striated layer system featuring a reference layer having a direction of magnetization substantially uninfluenced by a direction of an outer magnetic field acting on it. During operation, the sensor element provides a measuring signal which changes as a function of a measurement angle between the component of the field strength of the outer magnetic field lying in the plane of the layer system, and the direction of magnetization, and from which this measurement angle is able to be ascertained. In addition, observed in a top view of the striated layer system, the angle between the direction of magnetization in the absence of the outer magnetic field and the longitudinal direction of the striated layer system is set in such a way that in response to an influence of the outer magnetic field having a defined field strength, which is selected from a predefined work interval, the angle error of the layer system, as a function of this angle and the field strength, is minimal.
摘要翻译：提供了一种磁阻传感器元件，具有磁阻层系统，其在顶视图中至少是区域性条纹化的。传感器元件基于GMR效应进行操作，并且根据自旋阀原理构造，具有参考层的条纹层系统具有基本上不受作用在其上的外部磁场的方向的磁化方向的磁化方向。在操作期间，传感器元件提供测量信号，该测量信号根据位于层系统的平面中的外部磁场的场强的分量与磁化方向之间的测量角度而变化，并且由此可以确定测量角度。此外，在条纹层系统的俯视图中观察到，在没有外磁场的磁化方向与条纹层系统的纵向方向之间的角度被设定为响应于影响具有定义的场强的外部磁场，其从预定义的工作间隔中选择，层系统的角度误差作为该角度和场强的函数是最小的。

9. 发明授权

US07064649B2 Magneto-resistive layer arrangement and gradiometer with said layer arrangement 失效
标题翻译：具有所述层布置的磁阻层布置和梯度计
公开(公告)号：US07064649B2
公开(公告)日：2006-06-20
申请号：US10344314
申请日：2002-05-16
申请人： Peter Schmollngruber , Henrik Siegle
发明人： Peter Schmollngruber , Henrik Siegle
IPC分类号： H01L43/00
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/08
摘要： A magnetoresistive layer system including a layer sequence including at least two magnetic layers, a non-magnetic, electrically conductive intermediate layer being arranged between them; the electrical resistance of the layer system being changeable as a function of an external magnetic field acting on the layer system. At least one magnetically hard layer is integrated in the layer system, at least in certain areas, applying a magnetic field at least in the area of a boundary surface between the magnetic layers and the intermediate layer. The magnetoresistive layer system is suitable in particular for use in a GMR sensor element including coupled multilayers or in an AMR sensor element having a barberpole structure. In addition, the system includes a gradiometer including a plurality of such layer systems.
摘要翻译：一种磁阻层系统，包括包括至少两个磁性层的层序列，布置在它们之间的非磁性导电中间层; 层系统的电阻可以作为作用在层系统上的外部磁场的函数而变化。至少在一个磁层中集成了至少一个磁性硬层，至少在某些区域，至少在磁性层和中间层之间的边界面的区域中施加一个磁场。磁阻层系统特别适用于包括耦合多层的GMR传感器元件或具有barberpole结构的AMR传感器元件。此外，该系统包括包括多个这样的层系统的梯度计。

10. 发明申请

US20060103381A1 Gmr sensor element and its use 失效
标题翻译： Gmr传感元件及其用途
公开(公告)号：US20060103381A1
公开(公告)日：2006-05-18
申请号：US10523252
申请日：2003-06-27
申请人： Peter Schmollngruber , Ingo Herrmann , Henrik Siegle , Hartmut Kittel , Paul Farber , Ulrich May
发明人： Peter Schmollngruber , Ingo Herrmann , Henrik Siegle , Hartmut Kittel , Paul Farber , Ulrich May
IPC分类号： G01B7/30
CPC分类号： B82Y25/00 , F01L1/00 , F01L2101/00 , F01L2820/041 , G01R33/093
摘要： A GMR sensor element is proposed, having a rotationally symmetrical positioning of especially eight GMR resistor elements which are connected to each other to form two Wheatstone's full bridges. This GMR sensor element is especially suitable for use in an angle sensor for the detection of the absolute position of the camshaft or the crankshaft in a motor vehicle, particularly in the case of a camshaft-free engine having electrical or electrohydraulic valve timing, of a motor position of an electrically commutated motor, or of detection of a windshield wiper position, or in the steering angle sensor system in motor vehicles.
摘要翻译：提出了一种GMR传感器元件，具有特别是八个GMR电阻元件的旋转对称定位，它们彼此连接以形成两个惠斯通的全桥。该GMR传感器元件特别适用于用于检测机动车辆中的凸轮轴或曲轴的绝对位置的角度传感器，特别是在具有电动或电动液压阀定时的无凸轮轴发动机的情况下电动换向马达的电机位置，或者检测挡风玻璃刮水器位置，或者在机动车辆的转向角传感器系统中。

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