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    • 3. 发明授权
    • Bit error correction for removing age related errors in a bit pattern
    • 用于消除位模式中的年龄相关错误的位纠错
    • US08726123B2
    • 2014-05-13
    • US13548462
    • 2012-07-13
    • Rainer GoettfertBerndt GammelThomas Kuenemund
    • Rainer GoettfertBerndt GammelThomas Kuenemund
    • H03M13/00
    • G06F11/10G06F11/1008G06F21/35G06F21/72H03M13/05H03M13/63H04L9/0866H04L2209/34
    • A bit error corrector includes an aging bit pattern memory operable to store at least one aging bit pattern which conveys aging-related effects within a succession of uncorrected bit patterns, a bit pattern modifier operable to modify a current, uncorrected bit pattern using the at least one aging bit pattern and generate a modified bit pattern, and a bit pattern comparator operable to compare the current uncorrected bit pattern with a corrected bit pattern which is based on the modified bit pattern and determine a corresponding comparative bit pattern. An aging bit pattern determiner is operable to recursively determine a new aging bit pattern based on the at least one aging bit pattern and the comparative bit pattern, and store the new aging bit pattern in the aging bit pattern memory for use during modification of a subsequent uncorrected bit pattern by the bit pattern modifier.
    • 位错误校正器包括老化位模式存储器,其可操作以存储在一系列未校正位模式中传达与老化有关的效应的至少一个老化位模式,位模式修改器可操作以使用至少一个修正的未校正位模式 一个老化比特模式并产生修改的比特模式,以及比特模式比较器,用于将当前未校正比特模式与基于修改的比特模式的校正比特模式进行比较,并确定相应的比较比特模式。 老化位模式确定器可操作以基于至少一个老化位模式和比较位模式递归地确定新的老化位模式,并将新的老化位模式存储在老化位模式存储器中,以在后续修改期间使用 未校正的位模式由位模式修改器。
    • 4. 发明授权
    • Storage circuit with fault detection and method for operating the same
    • 具有故障检测的存储电路及其操作方法
    • US08334707B2
    • 2012-12-18
    • US12344916
    • 2008-12-29
    • Thomas Kuenemund
    • Thomas Kuenemund
    • G06F7/38G06F7/04G06F17/30H03K19/00H03L7/00
    • G11C7/24
    • Some embodiments show a storage circuit with fault detection. The storage circuit comprises, first and second fault detection circuits each comprising a first stable state and a second stable state, wherein each of the first and the second fault detection circuits is configured such that a fault signal strength necessary to cause switching from the first stable state to the second stable state is different from a fault signal strength necessary to cause switching from the second stable state to the first stable state. Furthermore the storage circuit comprises a data input, a circuitry configured to cause the first fault detection circuit to assume the first stable state and the second fault detection circuit to assume the second stable state to store a data signal applied to the data input and a first output indicative of the state of the first fault detection circuit and a second output indicative of the state of the second fault detection circuit, wherein an invalid combination of the signal states at the first and second outputs indicate a fault.
    • 一些实施例示出了具有故障检测的存储电路。 存储电路包括第一和第二故障检测电路,每个包括第一稳定状态和第二稳定状态,其中第一和第二故障检测电路中的每一个被配置为使得从第一稳定状态引起切换所需的故障信号强度 状态到第二稳定状态不同于使从第二稳定状态切换到第一稳定状态所需的故障信号强度。 此外,存储电路包括数据输入端,被配置为使第一故障检测电路呈现第一稳定状态的电路,而第二故障检测电路采用第二稳定状态以存储施加到数据输入端的数据信号;以及第一 输出表示第一故障检测电路的状态的第二输出和指示第二故障检测电路的状态的第二输出,其中在第一和第二输出处的信号状态的无效组合指示故障。
    • 5. 发明授权
    • Standard cell for arithmetic logic unit and chip card controller
    • 用于算术逻辑单元和芯片卡控制器的标准单元
    • US08135767B2
    • 2012-03-13
    • US11890966
    • 2007-08-08
    • Thomas Kuenemund
    • Thomas Kuenemund
    • G06F7/38G06F7/52
    • G06F7/5016G06F7/764
    • A cell for an arithmetic logic unit includes a first input; a second input; a carry-in input; a first control input and a second control input; and a circuit connected to the first input, the second input, the carry-in input, the first control input, and the second control input. The circuit has a first output and a second output, the second output having a first value as a function of the first input and the second input when the first control input and the second control input are supplied values equal to a value at the carry-in input, and having a second value as a function of the first input and second input when the values at the first control input and the second control input are independent of the value at the carry-in input.
    • 用于算术逻辑单元的单元包括第一输入; 第二个输入 输入输入; 第一控制输入和第二控制输入; 以及连接到第一输入端,第二输入端,进位输入端,第一控制输入端和第二控制输入端的电路。 该电路具有第一输出和第二输出,当第一控制输入和第二控制输入的值等于进位时的值时,第二输出具有作为第一输入和第二输入的函数的第一值, 并且当第一控制输入和第二控制输入处的值与进位输入处的值无关时具有作为第一输入和第二输入的函数的第二值。
    • 6. 发明授权
    • Integrated circuit with a radiation-sensitive thyristor structure
    • 具有辐射敏感晶闸管结构的集成电路
    • US08130008B2
    • 2012-03-06
    • US12714678
    • 2010-03-01
    • Thomas Kuenemund
    • Thomas Kuenemund
    • G01R31/02
    • H03K17/72G06F21/81G06F21/87H01L23/576H01L31/1113H01L2924/0002H01L2924/00
    • An integrated circuit comprises a circuit used for storing or processing data and a radiation-sensitive thyristor structure configured to conditionally short two power supply terminals of the integrated circuit. The thyristor structure is configured to turn on in response to a region of the thyristor structure being irradiated with radiation to which the thyristor structure is sensitive, in order to establish an electrically conductive connection between a first power supply terminal of the power supply terminals of the integrated circuit and a second power supply terminal of the power supply terminals of the integrated circuit. The thyristor structure is further configured so that a power density of the radiation needed for turning on the thyristor structure is lower than a power density of the radiation needed for a change of data of the circuit used for storing or processing data.
    • 集成电路包括用于存储或处理数据的电路和被配置为有条件地短路集成电路的两个电源端子的辐射敏感晶闸管结构。 晶闸管结构被配置为响应于晶闸管结构的区域被可控硅结构敏感的辐射照射而导通,以便在所述晶闸管结构的电源端子的第一电源端子之间建立导电连接, 集成电路和集成电路的电源端子的第二电源端子。 晶闸管结构被进一步配置,使得用于导通晶闸管结构所需的辐射的功率密度低于用于存储或处理数据的电路的数据变化所需的辐射的功率密度。
    • 7. 发明申请
    • Integrated Circuit with a Radiation-Sensitive Thyristor Structure
    • 具有辐射敏感晶闸管结构的集成电路
    • US20110210782A1
    • 2011-09-01
    • US12714678
    • 2010-03-01
    • Thomas Kuenemund
    • Thomas Kuenemund
    • H03K17/74H05K1/00G06F21/02H03K17/78
    • H03K17/72G06F21/81G06F21/87H01L23/576H01L31/1113H01L2924/0002H01L2924/00
    • An integrated circuit comprises a circuit used for storing or processing data and a radiation-sensitive thyristor structure configured to conditionally short two power supply terminals of the integrated circuit. The thyristor structure is configured to turn on in response to a region of the thyristor structure being irradiated with radiation to which the thyristor structure is sensitive, in order to establish an electrically conductive connection between a first power supply terminal of the power supply terminals of the integrated circuit and a second power supply terminal of the power supply terminals of the integrated circuit. The thyristor structure is further configured so that a power density of the radiation needed for turning on the thyristor structure is lower than a power density of the radiation needed for a change of data of the circuit used for storing or processing data.
    • 集成电路包括用于存储或处理数据的电路和被配置为有条件地短路集成电路的两个电源端子的辐射敏感晶闸管结构。 晶闸管结构被配置为响应于晶闸管结构的区域被可控硅结构敏感的辐射照射而导通,以便在所述晶闸管结构的电源端子的第一电源端子之间建立导电连接, 集成电路和集成电路的电源端子的第二电源端子。 晶闸管结构被进一步配置,使得用于导通晶闸管结构所需的辐射的功率密度低于用于存储或处理数据的电路的数据变化所需的辐射的功率密度。
    • 8. 发明授权
    • Masked memory cells
    • 屏蔽记忆体
    • US07898836B2
    • 2011-03-01
    • US12106927
    • 2008-04-21
    • Thomas KuenemundKarl ZapfArtur Wroblewski
    • Thomas KuenemundKarl ZapfArtur Wroblewski
    • G11C17/00
    • G11C17/12G11C17/18
    • An array of masked memory cells including a first memory cell in a first column and a second memory cell in a second different column, wherein the first memory cell is capable of being accessed, so as to output, dependent on a first binary mask signal, a first binary value at a first output and a second binary value at a second output or vice versa, wherein the second memory cell is capable of being accessed, so as to output, dependent on a second binary mask signal, a first binary value at a third output and a second binary value at a fourth output or vice versa, and wherein the second and the third outputs of the memory cells are connected to an identical bit line of the memory array.
    • 一种掩蔽存储单元的阵列,包括第一列中的第一存储单元和第二不同列中的第二存储单元,其中第一存储单元能够被访问,以便根据第一二进制掩码信号输出, 在第一输出处的第一二进制值和第二输出处的第二二进制值,反之亦然,其中第二存储器单元能够被访问,以便根据第二二进制掩码信号输出第二二进制值 第三输出和第二二进制值在第四输出或反之亦然,并且其中存储器单元的第二和第三输出连接到存储器阵列的相同位线。
    • 10. 发明授权
    • Device with a data retention mode and a data processing mode
    • 具有数据保留模式和数据处理模式的设备
    • US08502585B2
    • 2013-08-06
    • US13187772
    • 2011-07-21
    • Thomas KuenemundAnton HuberRoswitha Deppe
    • Thomas KuenemundAnton HuberRoswitha Deppe
    • H03K3/356
    • H03K3/35625H03K3/356008H03K3/356156
    • A device includes a flip flop and a control circuit. The flip flop includes a flip flop data input terminal and a flip flop clock input terminal. The control circuit includes a control circuit data input terminal and a control circuit clock input terminal. The control circuit is configured to route, in a Data Processing Mode of the device, an incoming data signal from the control circuit data input terminal to the flip flop data input terminal and an incoming clock signal from the control circuit clock input terminal to the flip flop clock input terminal and to apply, in a Data Retention Mode of the device, a first given fixed signal value to the flip flop data input terminal independent of a value of the incoming data signal and a second given fixed signal value to the flip flop clock input terminal independent of a value of the incoming clock signal.
    • 一种装置包括触发器和控制电路。 触发器包括触发器数据输入端和触发器时钟输入端。 控制电路包括控制电路数据输入端和控制电路时钟输入端。 控制电路被配置为在设备的数据处理模式中路由从控制电路数据输入端到触发器数据输入端的输入数据信号和从控制电路时钟输入端到触发器的输入时钟信号 并且在设备的数据保留模式中,将与输入数据信号的值无关的触发器数据输入端的第一给定固定信号值和向触发器的第二给定固定信号值应用于触发器时钟输入端 时钟输入端子独立于输入时钟信号的值。