专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100209596A1 SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL 有权
标题翻译：可拉伸铅钛酸铅（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的电解存储器件结构
公开(公告)号：US20100209596A1
公开(公告)日：2010-08-19
申请号：US12768374
申请日：2010-04-27
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daneil J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daneil J. Vestyck , Thomas H. Baum
IPC分类号： B05D5/12
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15μm。在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

2. 发明申请

US20110097478A1 SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL 有权
标题翻译：可拉伸铅钛酸铅（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的电解存储器件结构
公开(公告)号：US20110097478A1
公开(公告)日：2011-04-28
申请号：US12978393
申请日：2010-12-23
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： H01G4/00 , C23C16/06 , C23C16/448 , C04B35/472
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15μm。在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

3. 发明授权

US07862857B2 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US07862857B2
公开(公告)日：2011-01-04
申请号：US12768374
申请日：2010-04-27
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： C23C16/40 , H01L21/02 , H01G4/10
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15μm。在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

4. 发明授权

US07705382B2 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US07705382B2
公开(公告)日：2010-04-27
申请号：US11924716
申请日：2007-10-26
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15μm。在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

5. 发明授权

US07344589B2 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US07344589B2
公开(公告)日：2008-03-18
申请号：US11328582
申请日：2006-01-10
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： C23C16/40
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15毫米。在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

6. 发明授权

US06984417B2 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US06984417B2
公开(公告)日：2006-01-10
申请号：US09928860
申请日：2001-08-13
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： C23C16/06 , C23C16/00
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15毫米。在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

7. 发明授权

US06316797B1 Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US06316797B1
公开(公告)日：2001-11-13
申请号：US09251890
申请日：1999-02-19
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： H01L2976
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15毫米。在优选实施例中相应的电容器面积（即横向缩放）在约104至约10-2mum2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

8. 发明授权

US07012292B1 Oxidative top electrode deposition process, and microelectronic device structure 失效
公开(公告)号：US07012292B1
公开(公告)日：2006-03-14
申请号：US09200495
申请日：1998-11-25
申请人： Peter C. Van Buskirk , Steven M. Bilodeau , Stephen T. Johnston , Daniel J. Vestyck , Michael W. Russell
发明人： Peter C. Van Buskirk , Steven M. Bilodeau , Stephen T. Johnston , Daniel J. Vestyck , Michael W. Russell
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.

9. 发明授权

US06346741B1 Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same 有权
标题翻译： FeRAM电容器的化学机械抛光的组成和结构以及使用其制造FeRAM电容器的方法
公开(公告)号：US06346741B1
公开(公告)日：2002-02-12
申请号：US09200499
申请日：1998-11-25
申请人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
发明人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
IPC分类号： H01L2940
CPC分类号： H01L27/1085 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L27/10852 , H01L27/10861 , H01L28/55 , H01L28/60 , H01L28/75
摘要： An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.
摘要翻译：通过化学机械抛光（CMP）工艺形成的集成电路结构，其包括凹入电介质基底中的导电通路，其中导电路径包括封装在透射增强材料中的导电传输线，并且其中导电通路依次由传输增强材料的第一层，随后是导电传输线; 传输增强材料的第二层，其封装所述导电传输线并与所述透射增强材料的第一层接触，其中所述透射增强材料选自高磁导率材料和高介电常数材料。这种集成电路结构可以包括从由电容器，电感器和电阻器组成的组中选择的器件结构。优选地，透射增强材料包括MgMn铁氧体，MgMnAl铁氧体，钛酸锶钡，钛酸铅锆，氧化钛，氧化钽等

10. 发明授权

US06184550B2 Ternary nitride-carbide barrier layers 失效
标题翻译：三元氮化碳 - 碳化物阻挡层
公开(公告)号：US06184550B2
公开(公告)日：2001-02-06
申请号：US09141971
申请日：1998-08-28
申请人： Peter C. Van Buskirk , Michael W. Russell
发明人： Peter C. Van Buskirk , Michael W. Russell
IPC分类号： H01L2972
CPC分类号： H01L23/53238 , H01L21/28568 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic structure including adjacent material layers susceptible of adverse interaction in contact with one another, and a barrier layer interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or higher order metal nitride-carbide material, whose metal constituents are different from one another and include at least one metal selected from the group consisting of transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Sc and Y, and optionally further including Al and/or Si. The barrier layer is stoichiometrically constituted to be amorphous or nanocrystalline in character, and may be readily formed by techniques such as chemical vapor deposition, sputtering, and plasma-assisted deposition, to provide a diffusional barrier of appropriate resistivity character for structures such as DRAMs or non-volatile ferroelectric memory cells.
摘要翻译：包括易于相互接触的不利相互作用的相邻材料层的微电子结构以及介于所述相邻材料层之间的阻挡层，其中所述阻挡层包括二元，三元或更高级的金属氮化物碳化物材料，其金属成分为包括选自过渡金属Ti，V，Cr，Zr，Nb，Mo，Hf，Ta，W，Sc和Y中的至少一种金属，以及任选地还包括Al和/或Si。阻挡层在化学计量上构成为特征的无定形或纳米晶体，并且可以通过诸如化学气相沉积，溅射和等离子体辅助沉积之类的技术容易地形成，以提供用于诸如DRAM或DRAM的结构的适当电阻率特性的扩散势垒非易失性铁电记忆体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式