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    • 4. 发明申请
    • DOUBLE ANNEAL PROCESS FOR AN IMPROVED RAPID THERMAL OXIDE PASSIVATED SOLAR CELL
    • 改进的快速热氧化物钝化太阳能电池的双重方法
    • US20100210060A1
    • 2010-08-19
    • US12371090
    • 2009-02-13
    • Peter BordenLi Xu
    • Peter BordenLi Xu
    • H01L31/18
    • H01L31/1864Y02E10/50Y02P70/521
    • Embodiments of the invention generally contemplate methods for treating a semiconductor solar cell substrate to reduce the number of undesirable material defects or interface state traps on the surface or within the substrate. These defects can adversely affect the efficiency of the solar cell because electron-hole pairs tend to recombine with the defects and are essentially lost without generating any useful electrical current. In one aspect, a method of forming a solar cell on a semiconductor substrate is provided, comprising doping a front surface of the substrate, applying a passivating layer to the front surface and/or a back surface of the substrate, and annealing the substrate to reduce the interface state trap density (Dit).
    • 本发明的实施方案通常考虑用于处理半导体太阳能电池基板以减少在表面上或在基板内的不期望的材料缺陷或界面状态陷阱的数量的方法。 这些缺陷可能不利地影响太阳能电池的效率,因为电子 - 空穴对倾向于与缺陷重新组合并且基本上损失而不产生任何有用的电流。 一方面,提供一种在半导体基板上形成太阳能电池的方法,包括:对所述基板的前表面进行掺杂,向所述基板的前表面和/或后表面施加钝化层,并将所述基板退火至 降低界面态陷阱密度(Dit)。
    • 6. 发明申请
    • High throughput measurement of via defects in interconnects
    • 互连中通孔缺陷的高通量测量
    • US20050214956A1
    • 2005-09-29
    • US10813407
    • 2004-03-29
    • Jiping LiPeter BordenEdgar Genio
    • Jiping LiPeter BordenEdgar Genio
    • G01N25/18G01N25/72H01L23/544H01L21/66
    • G01N25/18G01N25/72
    • Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.
    • 将热施加到包括一个或多个通孔的导电结构,并且测量在加热点处或附近的温度。 测量的温度表示导热结构中靠近加热点的各种特征(例如通路和/或迹线)的完整性或缺陷。 具体而言,较高的温度测量(与参考结构中的测量值相比)表示从热施加点减少的热传递,因此表示缺陷。 参考结构可以与导电结构(例如,提供基线)或模具外部在相同的晶片(例如,在测试结构中)或晶片外部(例如,在参考晶片中)处于相同的裸片中,这取决于 该实施例。
    • 8. 发明申请
    • Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity
    • 使用扫描光束对相邻区域进行差分评估以改变反射率
    • US20050122525A1
    • 2005-06-09
    • US10731991
    • 2003-12-09
    • Peter BordenEdward Budiarto
    • Peter BordenEdward Budiarto
    • G01N21/31G01N21/55G01N21/95G01N21/956G01R31/265H01L21/66
    • G01N21/95607G01N21/3151G01N21/55G01R31/2656
    • A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by oscillating a spot of a beam of electromagnetic radiation. In several such embodiments, as reflectivity is a function of wavelength of an incident beam, three sets of measurements are made using laser beams of three different wavelengths, to obtain three reflectivity change measures (one at each wavelength). Next, the three reflectivity change measures are used to solve for each of three properties of the doped region, namely junction depth, doping concentration, and profile abruptness.
    • 具有不同掺杂剂浓度分布的两个区域的半导体晶片通过在两个区域中执行两个(或多个)测量并且比较来自两个区域的测量值来获得指示两个区域之间的反射率差异的反射率变化量度来评估。 如果其他区域的相应属性是已知的,则分析反射率变化测量产生一个区域的一个或多个属性。 例如,如果两个区域中的一个是掺杂的,另一个区域是未掺杂的(例如晶体管的源极/漏极和沟道区),则两个区域之间的反射率的变化可以产生一个或多个以下特性 掺杂区域:(1)掺杂浓度,(2)结或分布深度,以及(3)在该结处掺杂剂浓度分布的突然性(即斜率)。 在一些实施例中,通过振荡电磁辐射束的点来执行两个区域中刚刚描述的测量。 在几个这样的实施例中,由于反射率是入射光束的波长的函数,所以使用三种不同波长的激光束进行三组测量,以获得三个反射率变化测量(每个波长一个)。 接下来,使用三个反射率变化测量来求解掺杂区域的三个特性中的每一个,即结深度,掺杂浓度和轮廓突然性。