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    • 2. 发明授权
    • Method for making phase change memory
    • 相变存储器的方法
    • US08621746B2
    • 2014-01-07
    • US13332486
    • 2011-12-21
    • Peng LiuQun-Qing LiKai-Li JiangShou-Shan Fan
    • Peng LiuQun-Qing LiKai-Li JiangShou-Shan Fan
    • H01R43/00
    • H01L45/06H01L45/126H01L45/144
    • A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.
    • 提供了一种制造相变存储器的方法。 该方法包括以下步骤。 提供基板。 多个第一行电极引线和第二行电极引线位于基板上。 在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。 图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。 在每个碳纳米管单元的表面上施加相变层。 多个第一电极,多个第二电极,多个第一行电极引线和多个第二行电极引线位于基板上。
    • 10. 发明授权
    • Thin film transistor
    • 薄膜晶体管
    • US07973305B2
    • 2011-07-05
    • US12384299
    • 2009-04-02
    • Kai-Li JiangQun-Qing LiShou-Shan Fan
    • Kai-Li JiangQun-Qing LiShou-Shan Fan
    • H01L29/06
    • H01L51/0048B82Y10/00H01L51/0541H01L51/0545H01L51/0562
    • A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions.
    • 薄膜晶体管包括源电极,漏电极,半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极,漏电极和半导体层绝缘。 半导体层包括至少两个层叠的碳纳米管膜,并且每个碳纳米管膜包括主要沿相同方向定向的多个碳纳米管,并且至少两个相邻的碳纳米管膜中的碳纳米管沿着不同的方向排列。