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1. 发明授权

US07666968B2 Acene-thiophene copolymers with silethynly groups 失效
标题翻译：具有甲硅烷基乙炔基的乙烯 - 噻吩共聚物
公开(公告)号：US07666968B2
公开(公告)日：2010-02-23
申请号：US11379642
申请日：2006-04-21
申请人： Peiwang Zhu , Dennis E. Vogel , Christopher P. Gerlach
发明人： Peiwang Zhu , Dennis E. Vogel , Christopher P. Gerlach
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , C08G61/122 , C08G2261/1424 , C08G2261/144 , C08G2261/15 , C08G2261/314 , C08G2261/3223 , C08G2261/3243 , C08G2261/411
摘要： Acene-thiophene copolymers with attached silylethynyl groups are provided that can be used in electronic devices. The copolymers are often soluble in common organic solvents and can be part of a coating composition.
摘要翻译：提供具有连接的甲硅烷基乙炔基的乙烯 - 噻吩共聚物，其可用于电子设备中。共聚物通常可溶于常用有机溶剂，并且可以是涂料组合物的一部分。

2. 发明授权

US07495251B2 Electronic devices containing acene-thiophene copolymers with silylethynyl groups 有权
标题翻译：含有甲硅烷基乙炔基的乙烯 - 噻吩共聚物的电子器件
公开(公告)号：US07495251B2
公开(公告)日：2009-02-24
申请号：US11379662
申请日：2006-04-21
申请人： Peiwang Zhu , Dennis E. Vogel , Tzu-Chen Lee , Christopher P. Gerlach
发明人： Peiwang Zhu , Dennis E. Vogel , Tzu-Chen Lee , Christopher P. Gerlach
IPC分类号： H01L29/08
CPC分类号： H01L51/0043 , B82Y10/00 , C08G61/126 , H01L51/0036 , H01L51/0037 , H01L51/0047 , H01L51/0094 , H01L51/0545 , H01L51/4253 , H01L51/5012 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： Electronic devices that include an acene-thiophene copolymer and methods of making such electronic devices are described. More specifically, the acene-thiophene copolymer has attached silylethynyl groups. The copolymer can be used, for example, in a semiconductor layer or in a layer positioned between a first electrode and a second electrode.
摘要翻译：描述了包含乙烯 - 噻吩共聚物的电子器件和制造这种电子器件的方法。更具体地说，所述苯乙烯 - 噻吩共聚物具有连接的甲硅烷基乙炔基。共聚物可以用于例如半导体层或位于第一电极和第二电极之间的层中。

3. 发明授权

US07608679B2 Acene-thiophene copolymers 有权
标题翻译：乙烯 - 噻吩共聚物
公开(公告)号：US07608679B2
公开(公告)日：2009-10-27
申请号：US11278222
申请日：2006-03-31
申请人： Peiwang Zhu , Tzu-Chen Lee , Dennis E. Vogel , Christopher P. Gerlach
发明人： Peiwang Zhu , Tzu-Chen Lee , Dennis E. Vogel , Christopher P. Gerlach
IPC分类号： C08G75/00
CPC分类号： H01L51/0043 , C08G61/126 , C08G2261/124 , C08G2261/1424 , C08G2261/314 , C08G2261/3223 , H01L51/0037
摘要： Acene-thiophene copolymers are provided that can be used as semiconductor materials in electronic devices. The acene-thiophene copolymers are of Formula I. In Formula I, Ac is a radical of an acene having 2 to 5 fused aromatic rings. The acene can be unsubstituted or substituted with a substituent selected from an alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. Divalent group Q is selected from Formula III where each R1 and R2 group is independently selected from hydrogen, alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. The subscript n in Formula I is an integer equal to at least 4. The asterisks in Formula I indicate the location of attachment to another group such as another repeat unit of formula —Ac-Q-.
摘要翻译：提供了可用作电子器件中的半导体材料的乙烯 - 噻吩共聚物。乙烯 - 噻吩共聚物具有式I化合物。在式I中，Ac是具有2至5个稠合芳环的苊基团。该烯可以是未取代的或被选自烷基，烷氧基，硫代烷基，芳基，芳烷基，卤代，卤代烷基，羟基烷基，杂烷基，烯基或其组合的取代基取代。二价基团Q选自式III，其中每个R 1和R 2基团独立地选自氢，烷基，烷氧基，硫代烷基，芳基，芳烷基，卤素，卤代烷基，羟基烷基，杂烷基，烯基或其组合。式I中的下标n是等于至少4的整数。式I中的星号表示连接到另一组的位置，例如式-Ac-Q-的另一个重复单元。

4. 发明授权

US07667230B2 Electronic devices containing acene-thiophene copolymers 有权
标题翻译：含有乙烯 - 噻吩共聚物的电子器件
公开(公告)号：US07667230B2
公开(公告)日：2010-02-23
申请号：US11278229
申请日：2006-03-31
申请人： Peiwang Zhu , Tzu-Chen Lee , Dennis E. Vogel , Christopher P. Gerlach
发明人： Peiwang Zhu , Tzu-Chen Lee , Dennis E. Vogel , Christopher P. Gerlach
IPC分类号： H01L35/24
CPC分类号： C09K11/06 , C08G61/126 , C08G2261/314 , C08G2261/3223 , C08G2261/512 , C08G2261/91 , C08G2261/92 , C09K2211/1011 , C09K2211/1092 , H01L51/0036 , H01L51/0043 , H01L51/0508 , H05B33/14 , Y02E10/549
摘要： Electronic devices that include an acene-thiophene copolymer and methods of making such electronic devices are described. The acene-thiophene copolymer can be used, for example, in a semiconductor layer or in a layer positioned between a first electrode and a second electrode.
摘要翻译：描述了包含乙烯 - 噻吩共聚物的电子器件和制造这种电子器件的方法。该乙烯 - 噻吩共聚物可用于例如半导体层或位于第一电极和第二电极之间的层中。

5. 发明申请

US20100140600A1 THIN FILM TRANSISTORS INCORPORATING INTERFACIAL CONDUCTIVE CLUSTERS 审中-公开
标题翻译：包含界面导电簇的薄膜晶体管
公开(公告)号：US20100140600A1
公开(公告)日：2010-06-10
申请号：US12596164
申请日：2008-05-13
申请人： Robert S. Clough , Tzu-Chen Lee , Dennis E. Vogel , Peiwang Zhu
发明人： Robert S. Clough , Tzu-Chen Lee , Dennis E. Vogel , Peiwang Zhu
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0537 , B82Y10/00 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/0048 , H01L51/0052 , H01L51/0525
摘要： A field effect transistor includes a thin layer of discontinuous conductive clusters between the gate dielectric and the active layer. The active layer can include an organic semiconductor or a blend of organic semiconductor and polymer. Metals, metal oxides, predominantly non-carbon metallic materials, and/or carbon nanotubes may be used to form the layer of conductive clusters. The conductive clusters improve transistor performance and also facilitate transistor fabrication.
摘要翻译：场效应晶体管包括在栅极电介质和有源层之间的不连续导电簇的薄层。有源层可以包括有机半导体或有机半导体和聚合物的共混物。可以使用金属，金属氧化物，主要是非碳金属材料和/或碳纳米管来形成导电簇的层。导电簇提高了晶体管的性能，并且还有助于晶体管的制造。

6. 发明授权

US07151276B2 Semiconductors containing perfluoroether acyl oligothiophene compounds 有权
标题翻译：含全氟醚酰基低聚噻吩化合物的半导体
公开(公告)号：US07151276B2
公开(公告)日：2006-12-19
申请号：US11075978
申请日：2005-03-09
申请人： Christopher P. Gerlach , David A. Ender , Dennis E. Vogel
发明人： Christopher P. Gerlach , David A. Ender , Dennis E. Vogel
IPC分类号： H01L35/24
CPC分类号： H01L51/0068 , B82Y30/00 , H01L51/0036 , H01L51/0529 , H01L51/0545
摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.
摘要翻译：描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。此外，描述了制造半导体器件的方法，其包括沉积包含全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。

7. 发明申请

US20080187651A1 CONDUCTIVE INK FORMULATIONS 审中-公开
标题翻译：导电油墨制剂
公开(公告)号：US20080187651A1
公开(公告)日：2008-08-07
申请号：US11552410
申请日：2006-10-24
申请人： Tzu-Chen Lee , Brian K. Nelson , Christopher P. Gerlach , Dennis E. Vogel
发明人： Tzu-Chen Lee , Brian K. Nelson , Christopher P. Gerlach , Dennis E. Vogel
IPC分类号： H01B1/12 , B05D5/12
CPC分类号： C09D11/52 , H05K1/097 , H05K2201/0329
摘要： Conductive ink formulations comprising a conductive polymer, metallic nanoparticles and a carrier are described. The formulations are printable on a surface, and annealed to form source and drain electrodes.
摘要翻译：描述了包含导电聚合物，金属纳米颗粒和载体的导电油墨配方。制剂可在表面上印刷，并进行退火以形成源极和漏极。

8. 发明授权

US07211679B2 Perfluoroether acyl oligothiophene compounds 有权
标题翻译：全氟醚酰基低聚噻吩化合物
公开(公告)号：US07211679B2
公开(公告)日：2007-05-01
申请号：US11076268
申请日：2005-03-09
申请人： Christopher P. Gerlach , David A. Ender , Dennis E. Vogel
发明人： Christopher P. Gerlach , David A. Ender , Dennis E. Vogel
IPC分类号： H01B1/12 , C07D333/04 , C07D333/28
CPC分类号： C07D333/28 , B82Y30/00 , C08G61/126 , H01L51/0036
摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.
摘要翻译：描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。此外，描述了制造半导体器件的方法，其包括沉积含有全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。

9. 发明授权

US07948016B1 Off-center deposition of organic semiconductor in an organic semiconductor device 有权
标题翻译：有机半导体在有机半导体器件中的偏心沉积
公开(公告)号：US07948016B1
公开(公告)日：2011-05-24
申请号：US12611556
申请日：2009-11-03
申请人： Scott M. Schnobrich , Robert S. Clough , Dennis E. Vogel , Michael E. Griffin
发明人： Scott M. Schnobrich , Robert S. Clough , Dennis E. Vogel , Michael E. Griffin
IPC分类号： H01L29/76 , H01L23/58
CPC分类号： H01L51/0005 , H01L51/0558
摘要： The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.
摘要翻译：本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法，包括以下步骤：a）提供承载第一和第二导电区域的衬底，其在其间限定通道，其中通道不超过75％任一导电区的周长; 以及b）沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样，其中大部分溶液沉积在通道的一侧，而不是在通道上。在本公开的一些实施例中，溶液完全沉积在通道的一侧，而不是在通道上，此外，溶液沉积在具有小于通道长度的长度的带中。本公开另外提供诸如晶体管的薄膜半导体器件。

10. 发明申请

US20090004771A1 METHODS FOR MAKING ELECTRONIC DEVICES WITH A SOLUTION DEPOSITED GATE DIELECTRIC 有权
标题翻译：用于制造具有溶液沉积栅电介质的电子器件的方法
公开(公告)号：US20090004771A1
公开(公告)日：2009-01-01
申请号：US11771787
申请日：2007-06-29
申请人： James C. Novack , Dennis E. Vogel , Brian K. Nelson
发明人： James C. Novack , Dennis E. Vogel , Brian K. Nelson
IPC分类号： H01L21/336 , B05D3/06 , H01L51/40 , B05D5/12
CPC分类号： H01L51/0537 , H01L27/1292 , H01L29/78681 , H01L51/0005 , H01L51/0541 , H01L51/0545
摘要： A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.
摘要翻译：制造电子器件的方法包括将电介质组合物沉积在衬底上并聚合电介质组合物以形成栅极电介质。电介质组合物包含可聚合树脂和氧化锆纳米颗粒。

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