会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Method of forming uniform features using photoresist
    • 使用光刻胶形成均匀特征的方法
    • US07560225B2
    • 2009-07-14
    • US10448501
    • 2003-05-29
    • Omar Eduardo Montero CamachoPei-C ChenCherngye HwangDiana PerezEric Yongjian Sun
    • Omar Eduardo Montero CamachoPei-C ChenCherngye HwangDiana PerezEric Yongjian Sun
    • G03F7/40B44C1/22
    • G11B5/3173G03F7/40G03F7/405G11B5/102
    • A process for ion milling using photoresist as a mask is described. In a preferred embodiment the invention is used in the fabricating air-bearing features on sliders for use in magnetic storage devices. According to the invention the photoresist (liquid or dry) is applied, developed and removed as in the prior art which includes baking steps. The embodiment of the invention includes an additional baking step beyond whatever baking steps are used in the photolithography process. The additional baking step is preferably performed immediately prior to ion milling. The additional baking step according to the invention yields increased uniformity of the depth of the ion milling which is believed to result from reduction of volatile material such as water in the photoresist. When the invention is used as part of the manufacturing process for ion milling the air-bearing features on a slider, the features are more uniform which improves the overall quality and performance.
    • 描述使用光致抗蚀剂作为掩模的离子铣削的方法。 在优选实施例中,本发明用于制造用于磁存储装置的滑块上的空气轴承特征。 根据本发明,如在包括烘烤步骤的现有技术中,应用,显影和去除光致抗蚀剂(液体或干燥)。 本发明的实施例包括除了在光刻工艺中使用的任何烘烤步骤之外的额外的烘烤步骤。 额外的烘烤步骤优选在离子研磨之前立即进行。 根据本发明的另外的烘烤步骤产生离子研磨深度的均匀性,这被认为是通过光致抗蚀剂中的挥发性物质例如水的还原引起的。 当将本发明用作离子铣削制造过程的一部分时,滑块上的空气轴承特征更加均匀,这提高了整体的质量和性能。
    • 8. 发明授权
    • Method for depositing a thin film adhesion layer
    • 沉积薄膜粘附层的方法
    • US07300556B2
    • 2007-11-27
    • US10651632
    • 2003-08-29
    • Cherngye HwangEun RowNing ShiEric (Yongjian) Sun
    • Cherngye HwangEun RowNing ShiEric (Yongjian) Sun
    • C23C14/34
    • C23C28/046C23C14/024C23C14/0605C23C14/165C23C28/04
    • A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.
    • 公开了一种物理气相沉积(PVD)的方法,其中在沉积粘合层(优选硅)时,将氙用作真空室中的操作气体,其允许粘附层超薄,同时具有改善的耐久性 艺术电影。 如现有技术中典型的使用氩气导致氩原子被掺入到超薄硅膜中,具有有害的结果。 在只有几埃厚的薄膜中,用氩气或其它元素污染薄膜可能产生具有降低的粘附性能的膜,并且在某些情况下,诸如氩气的贵重原子可以逸出留下空隙或针孔的膜。 在真空室中使用更大和更重的氙原子产生基本上更纯的膜,具有降低的空隙和针孔的风险。 在优选的实施方案中,将氙作为沉积硅粘合层的工作气体的使用与使用过滤的阴极电弧(FCA)方法结合,以将保护性外涂层,优选基于碳的沉积物沉积在磁性记录头上。