专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007311475A Semiconductor photodetector 有权
标题翻译： SEMICONDUCTOR PHOTODETEOROR
公开(公告)号：JP2007311475A
公开(公告)日：2007-11-29
申请号：JP2006137713
申请日：2006-05-17
申请人： Pawdec:Kk , Univ Of Tokushima , 国立大学法人徳島大学 , 株式会社パウデック
发明人： ONO YASUO , KAWAI HIROHARU , OKADA MASAYA , GO KINPEI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor photodetector that detects only ultraviolet light or light of a shorter wavelength with extremely high photosensitivity, and also, can be easily manufactured without using a p-type layer. SOLUTION: The semiconductor photodetector is composed by providing a second semiconductor layer 3, whose band gap is larger than that of a first semiconductor layer 2 on the first semiconductor layer 2; a third semiconductor layer 4 whose band gap is smaller than that of the second semiconductor layer 3 and larger than photon energy corresponding to the shortest wavelength of visible light, and which forms a type I hetero-junction together with the second semiconductor layer 3 on the second semiconductor layer 3; a first electrode 5 on the first semiconductor layer 2; and a second electrode 6 on the third semiconductor layer 4. Electron holes, which are generated by optical absorption performed by the third semiconductor layer 4 during operation, are accumulated on the interface between the third semiconductor layer 4 and the second semiconductor layer 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体光电检测器，其仅检测紫外线或具有极高光敏性的较短波长的光，并且也可以容易地制造而不使用p型层。解决方案：半导体光电探测器是通过提供第二半导体层3构成的，该第二半导体层3的带隙大于第一半导体层2上的第一半导体层2的带隙; 第三半导体层4的带隙比第二半导体层3的带隙小，并且大于与可见光的最短波长相对应的光子能量，并且与第二半导体层3一起形成I型异质结第二半导体层3; 第一半导体层2上的第一电极5; 以及第三半导体层4上的第二电极6.在第三半导体层4和第二半导体层3之间的界面上累积由工作时由第三半导体层4进行的光吸收而产生的电子空穴。 P>版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2011066390A Method of manufacturing semiconductor element 有权
标题翻译：制造半导体元件的方法
公开(公告)号：JP2011066390A
公开(公告)日：2011-03-31
申请号：JP2010107394
申请日：2010-05-07
申请人： Pawdec:Kk , 株式会社パウデック
发明人： SUMIDA YUKITSUNE , HIRATA SHOKO , INADA TAKAYUKI , YAGI SHUICHI , KAWAI HIROHARU
IPC分类号： H01S5/323 , H01L21/02 , H01L21/205 , H01L21/336 , H01L27/12 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/872
CPC分类号： C30B29/406 , C30B25/04 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/045 , H01L29/2003 , H01L29/66446
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element which grows a GaN-based semiconductor layer or layers of high quality semiconductor crystal on a hetero substrate in the form of islands with substrate warpage suppressed, suppresses generation of a crack or the like even when the GaN-based semiconductor layer is highly thick, and easily has a large surface area, and also to provide a method of manufacturing the semiconductor element.
SOLUTION: The semiconductor element has: a substrate 11 made of a substance different from a GaN-based semiconductor; a growth mask 12 provided directly or indirectly on the substrate 11 and equipped with a single or a plurality of stripe-like windows 12a; and a single or a plurality of GaN-based semiconductor layers 13 grown in a surface orientation (0001) on the substrate 11 using the growth mask 12 in the form of islands. The stripe-like windows 12a of the growth mask 12 is extended in a direction parallel to a direction of the GaN-based semiconductor layer or layers 13.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体元件，其在异质衬底上以GaN的形式生长GaN基半导体层或多层的高质量半导体晶体，并抑制衬底翘曲，抑制裂纹等的产生即使当GaN基半导体层高度厚，并且容易具有大的表面积时，并且还提供制造半导体元件的方法。解决方案：半导体元件具有：由与GaN基半导体不同的物质制成的衬底11; 生长掩模12直接或间接地设置在基板11上并配备有单个或多个条状窗口12a; 以及使用岛状的生长掩模12在基板11上以表面取向（0001）生长的单个或多个GaN基半导体层13。生长掩模12的条状窗12a在平行于GaN基半导体层或层13的<1-100>方向的方向上延伸。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2013243275A GaN-BASED SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：基于GaN的半导体元件及其制造方法
公开(公告)号：JP2013243275A
公开(公告)日：2013-12-05
申请号：JP2012116203
申请日：2012-05-22
申请人： Pawdec:Kk , 株式会社パウデック
发明人： KAWAI HIROHARU
IPC分类号： H01L21/338 , H01L21/02 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/778 , H01L29/786 , H01L29/812
CPC分类号： H01L29/2003 , H01L27/1203 , H01L29/1075 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor element and a manufacturing method of the same, which can manufacture a high-voltage and high-output GaN-based semiconductor element with high yield by using an Si substrate.SOLUTION: A GaN-based semiconductor element manufacturing method comprises: a process of forming element layers (16-18) composed of a GaN-based semiconductor on a GaN-based semiconductor growth substrate; a process of forming a GaN-based semiconductor growth base layer (13) by thinning the GaN-based semiconductor growth substrate from a rear face side thereof; and a process of bonding a dielectric layer (12) formed on a thermally conductive and electrically conductive substrate (11) and the GaN-based semiconductor growth base layer (13) with each other.
摘要翻译：要解决的问题：提供一种GaN基半导体元件及其制造方法，其可以通过使用Si衬底来以高产率制造高电压和高输出的GaN基半导体元件。解决方案：GaN 的半导体元件制造方法包括：在GaN基半导体生长衬底上形成由GaN基半导体构成的元件层（16-18）的工艺; 通过从其背面侧稀薄GaN基半导体生长基板来形成GaN基半导体生长基层（13）的工序; 以及将形成在导热导电基板（11）上的电介质层（12）和GaN基半导体生长基底层（13）彼此接合的工序。

4. 发明专利

JP2014150211A Semiconductor element manufacturing method, insulated gate field effect transistor, insulated gate field effect transistor manufacturing method, semiconductor light-emitting element manufacturing method and solar cell manufacturing method 有权
标题翻译：半导体元件制造方法，绝缘栅场效应晶体管，绝缘栅场效应晶体管制造方法，半导体发光元件制造方法和太阳能电池制造方法
公开(公告)号：JP2014150211A
公开(公告)日：2014-08-21
申请号：JP2013019159
申请日：2013-02-04
申请人： Pawdec:Kk , 株式会社パウデック
发明人： KAWAI HIROHARU
IPC分类号： H01L21/336 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L29/12 , H01L29/47 , H01L29/739 , H01L29/78 , H01L29/872 , H01L31/06 , H01L33/32 , H01S5/343
CPC分类号： Y02E10/544 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can easily manufacture various kinds of high-voltage and high-output semiconductor elements such as a semiconductor electronic element, a semiconductor light-emitting element and a semiconductor light-receiving element by using an Si substrate.SOLUTION: A semiconductor element manufacturing method comprises: a process of growing on a first substrate (11), a first semiconductor layer (13) having a hexagonal crystal structure; a process of etching the first semiconductor layer (13) in a stripe-shaped manner until the first substrate (11) is etched to form a plurality of stripe-shaped seeds; a process of processing a surface of the first substrate (11) after forming the seeds so as not to practically grow a semiconductor layer having a hexagonal crystal structure; and a process of laterally growing from each seed, a second semiconductor layer (16) having a hexagonal crystal structure.
摘要翻译：要解决的问题：提供一种可以容易地制造半导体电子元件，半导体发光元件和半导体光接收元件的各种高压和高输出半导体元件的半导体元件制造方法，该半导体元件制造方法通过使用一种Si衬底。解决方案：一种半导体元件制造方法，包括：在第一衬底（11），具有六方晶系结构的第一半导体层（13）上生长的工艺; 蚀刻第一半导体层（13）的方法，直到第一衬底（11）被蚀刻以形成多个条形晶种; 在形成种子之后处理第一基板（11）的表面以便不实际地生长具有六方晶系结构的半导体层的工艺; 以及从每个晶种横向生长的工艺，具有六方晶系结构的第二半导体层（16）。

5. 发明专利

JP2013258239A Chemical vapor deposition apparatus 有权
标题翻译：化学蒸气沉积装置
公开(公告)号：JP2013258239A
公开(公告)日：2013-12-26
申请号：JP2012132781
申请日：2012-06-12
申请人： Pawdec:Kk , 株式会社パウデック
发明人： KAWAI HIROHARU
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus of vertical facing substrate mounting system also applicable to production of a nitride-based group III-V semiconductor wafer, in which attachment and detachment, carry-in and carry-out of a substrate can be simplified.SOLUTION: In a chemical vapor deposition apparatus 10, a pair of susceptors 2 on which a substrate 1 is mounted are fitted, respectively, to liners 9 with no gap thus forming planes, and then the planes are made to face each other thus forming a gas passage 15. Back faces of the pair of susceptors 2 are secured, respectively, onto the surfaces of susceptor support bases 3. The susceptor support bases 3 are surrounded by the liners 9 and airtight holding walls. An enclosure 11 is provided so as to cover the whole outer surface constituted of the liners 9, the airtight holding walls and the gas passage 15. An outer housing 18 is constituted of the enclosure 11 and the liners 9. Bodies are constituted by integrating a pair of portions other than the outer housing 18, respectively. The outer housing 18 and the bodies 19 can be attached and detached.
摘要翻译：要解决的问题：提供一种垂直面对基板安装系统的化学气相沉积装置，其也适用于氮化物基III-V族半导体晶片的生产，其中附着和分离，携带和移出基板可以简化。解决方案：在化学气相沉积装置10中，将一对其上安装有基板1的基座2分别装配到衬垫9上，无间隙地形成平面，然后使这些平面面对每个另一个因此形成气体通道15.一对基座2的后表面分别固定在基座支撑基座3的表面上。基座支撑基座3被衬垫9和气密保持壁包围。壳体11设置成覆盖由衬垫9，气密保持壁和气体通道15构成的整个外表面。外壳18由外壳11和衬垫9构成。主体通过将一个一对除外壳18之外的部分。外壳18和主体19可以被安装和拆卸。

6. 发明专利

JP2012114263A Semiconductor element and method of manufacturing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：JP2012114263A
公开(公告)日：2012-06-14
申请号：JP2010262313
申请日：2010-11-25
申请人： Pawdec:Kk , 株式会社パウデック
发明人： SUMIDA YUKITSUNE , HIRATA SHOKO , INADA TAKAYUKI , YAGI SHUICHI , KAWAI HIROHARU
IPC分类号： H01L29/47 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/329 , H01L21/337 , H01L21/338 , H01L27/095 , H01L29/778 , H01L29/808 , H01L29/812 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element capable of growing an island-shaped GaN-based semiconductor layer composed of a high-quality semiconductor crystal on a heterogeneous substrate while preventing curvature of the substrate, capable of preventing the occurrence of, for example, cracks even if the thickness of the GaN-based semiconductor layer is extremely thick, and capable of achieving a semiconductor element with a large area, and to provide a method of manufacturing the same.SOLUTION: A semiconductor element comprises: a substrate 11 composed of a material different from a material of a GaN-based semiconductor; a growth mask 12 that is directly or indirectly provided on the substrate 11 and has one or a plurality of stripe-shaped openings 12a; and one or a plurality of island-shaped GaN-based semiconductor layers 13 growing in the (0001) plane direction on the substrate 11 using the growth mask 12. The stripe-shaped openings 12a of the growth mask 12 extend in the direction parallel to the direction of the GaN-based semiconductor layers 13.
摘要翻译：要解决的问题：为了提供能够在防止基板的弯曲的同时在异质基板上生长由高质量半导体晶体构成的岛状GaN基半导体层的半导体元件，能够防止发生例如，即使GaN系半导体层的厚度非常厚，并且能够实现大面积的半导体元件，也可以提供其制造方法。解决方案：半导体元件包括：由不同于GaN基半导体材料的材料构成的衬底11; 直径或间接设置在基板11上并具有一个或多个条形开口12a的生长掩模12; 以及使用生长掩模12在衬底11上沿（0001）面方向生长的一个或多个岛状GaN基半导体层13.生长掩模12的条形开口12a沿着与 GaN基半导体层13的<1-100>方向。版权所有：（C）2012，JPO＆INPIT

7. 发明专利

JP2011066398A Semiconductor element, and production method thereof 审中-公开
标题翻译：半导体元件及其生产方法
公开(公告)号：JP2011066398A
公开(公告)日：2011-03-31
申请号：JP2010179182
申请日：2010-08-10
申请人： Pawdec:Kk , 株式会社パウデック
发明人： SUMIDA YUKITSUNE , HIRATA SHOKO , INADA TAKAYUKI , YAGI SHUICHI , KAWAI HIROHARU
IPC分类号： H01L21/20 , C30B25/04 , C30B29/38 , H01L21/205 , H01L21/336 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/872 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element and a production method thereof, in which island-like GaN semiconductor layers made of high-quality semiconductor crystal can be grown on a different kind of substrate while warpage of the substrate is suppressed, and cracking can be suppressed even when the GaN semiconductor layers are extremely thin to easily attain the semiconductor element having large area.
SOLUTION: The semiconductor element includes: a substrate 11 made of a material differing from a GaN semiconductor, a growth mask 12 provided directly or indirectly on the substrate 11 and having one or a plurality of striped openings 12a; and one or a plurality of island-like GaN semiconductor layers 13 grown on the substrate 11 in the (0001) plane orientation by using the growth mask 12. The striped openings 12a of the growth mask 12 extend in a direction parallel to the direction of the GaN semiconductor layers 13.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体元件及其制造方法，其中可以在不同种类的基板上生长由优质半导体晶体制成的岛状GaN半导体层，同时抑制基板翘曲，即使当GaN半导体层非常薄以容易地获得具有大面积的半导体元件时，也可以抑制裂纹。解决方案：半导体元件包括：由不同于GaN半导体的材料制成的衬底11，直接或间接地设置在衬底11上并具有一个或多个条纹开口12a的生长掩模12; 以及通过使用生长掩模12在（0001）面取向上在衬底11上生长的一个或多个岛状GaN半导体层13。生长掩模12的条纹开口12a沿平行于<1的方向延伸 -100> GaN半导体层13的方向。版权所有：（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式