专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110284755A1 HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR 有权
标题翻译：高灵敏度，固态中性探测器
公开(公告)号：US20110284755A1
公开(公告)日：2011-11-24
申请号：US13146780
申请日：2009-01-30
申请人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. Mchugh
发明人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. Mchugh
IPC分类号： G01T3/08 , H01L21/28
CPC分类号： H01L31/115 , G01T3/00 , G01T3/08 , H01L31/02
摘要： An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
摘要翻译：一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层（240）的慢或热中子（160）的装置（200）。该装置包括底部金属触点（220）和顶部金属触点（250），二极管结构（240）位于两个触点（220,250）之间，以便于检测α粒子（170）。装置（200）包括由含有硼-10同位素的材料形成的中子转换层（230）。顶部接触（250）被像素化，每个接触像素延伸到或靠近设备的边缘以促进电接触。接触像素具有细长体以允许它们跨越装置表面（242）延伸，每个像素具有小的表面积，以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。中子转换层（860）可以沉积在接触像素（830）上，例如使用纳米颗粒油墨的喷墨印刷。

2. 发明授权

US08569708B2 High sensitivity, solid state neutron detector 有权
标题翻译：高灵敏度，固态中子探测器
公开(公告)号：US08569708B2
公开(公告)日：2013-10-29
申请号：US13146780
申请日：2009-01-30
申请人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. McHugh
发明人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. McHugh
IPC分类号： G01T3/08
CPC分类号： H01L31/115 , G01T3/00 , G01T3/08 , H01L31/02
摘要： An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
摘要翻译：一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层（240）的慢或热中子（160）的装置（200）。该装置包括底部金属触点（220）和顶部金属触点（250），二极管结构（240）位于两个触点（220,250）之间，以便于检测α粒子（170）。装置（200）包括由含有硼-10同位素的材料形成的中子转换层（230）。顶部接触（250）被像素化，每个接触像素延伸到或靠近设备的边缘以促进电接触。接触像素具有细长体以允许它们跨越装置表面（242）延伸，每个像素具有小的表面积，以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。中子转换层（860）可以沉积在接触像素（830）上，例如使用纳米颗粒油墨的喷墨印刷。

3. 发明授权

US08466447B2 Back contact to film silicon on metal for photovoltaic cells 有权
标题翻译：背面接触光伏电池金属上的薄膜硅
公开(公告)号：US08466447B2
公开(公告)日：2013-06-18
申请号：US12537152
申请日：2009-08-06
申请人： Howard M. Branz , Charles Teplin , Pauls Stradins
发明人： Howard M. Branz , Charles Teplin , Pauls Stradins
IPC分类号： H01L31/042
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/036 , H01L31/0368 , H01L31/1804 , H01L31/182 , Y02E10/547 , Y02P70/521
摘要： A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.
摘要翻译：本文公开了一种用于太阳能电池的晶体取向的金属背接触。在一个实施例中，公开了用于制造光伏器件的光伏器件和方法。光电器件包括具有晶体取向的金属基板和具有与金属基板相同的晶体取向的异质外延晶体硅层。具有金属基板的晶体取向的异质外延缓冲层位于基板和晶体硅层之间，以减少金属从金属箔到晶体硅层的扩散，并提供与异质外延晶体硅层的化学相容性。另外，缓冲层包括电耦合晶体硅层和金属衬底的一个或多个导电路径。

4. 发明申请

US20110030773A1 PHOTOVOLTAIC CELL WITH BACK-SURFACE REFLECTIVITY SCATTERING 审中-公开
标题翻译：具有背面反射率散射的光电池
公开(公告)号：US20110030773A1
公开(公告)日：2011-02-10
申请号：US12537185
申请日：2009-08-06
申请人： HOWARD M. BRANZ , Charles Teplin , Pauls Stradins
发明人： HOWARD M. BRANZ , Charles Teplin , Pauls Stradins
IPC分类号： H01L31/00 , H01L21/30
CPC分类号： H01L31/03921 , H01L31/02366 , H01L31/056 , Y02E10/52
摘要： Crystal oriented photovoltaic cells with increased efficiency are disclosed herein. In an exemplary embodiment, a photovoltaic device includes a metal substrate with a crystalline orientation comprising a diffracting structure integrated into a surface of the metal substrate. The photovoltaic device includes a heteroepitaxial crystal silicon layer having the crystalline orientation of the metal substrate and a heteroepitaxially grown buffer layer having the crystalline orientation. The buffer layer is positioned adjacent to the surface of the metal substrate having the diffracting structure.
摘要翻译：本文公开了提高效率的晶体取向的光伏电池。在一个示例性实施例中，光伏器件包括具有结晶取向的金属基底，该金属基底包括整合到金属基底的表面中的衍射结构。光电器件包括具有金属衬底的晶体取向的异质外延晶体硅层和具有晶体取向的异质外延生长缓冲层。缓冲层位于具有衍射结构的金属基板的表面附近。

5. 发明申请

US20130048065A1 BACK CONTACT TO FILM SILICON ON METAL FOR PHOTOVOLTAIC CELLS 有权
公开(公告)号：US20130048065A1
公开(公告)日：2013-02-28
申请号：US12537152
申请日：2009-08-06
申请人： Howard M. Branz , Charles Teplin , Pauls Stradins
发明人： Howard M. Branz , Charles Teplin , Pauls Stradins
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/036 , H01L31/0368 , H01L31/1804 , H01L31/182 , Y02E10/547 , Y02P70/521
摘要： A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

6. 发明申请

US20110130012A1 RAPID THERMAL PROCESSING BY STAMPING 有权
标题翻译：通过冲压快速热处理
公开(公告)号：US20110130012A1
公开(公告)日：2011-06-02
申请号：US12675117
申请日：2007-08-31
申请人： Pauls Stradins , Qi Wang
发明人： Pauls Stradins , Qi Wang
IPC分类号： H01L21/26 , B29C59/02 , C03B32/02 , B23P11/00
CPC分类号： H01L21/324 , H01L21/67103 , Y10T29/49826
摘要： A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.
摘要翻译：提供快速热处理装置和方法用于诸如半导体晶片的样品的热处理。该装置具有包括具有冲压表面的印模（35）和使其处于选定的处理温度的加热器或冷却器（40）的部件，用于将样品（10）保持在适当位置的样品保持器（20），以便与冲压表面; 以及用于将冲压表面和印模（35）移动到和远离紧密的基本上无压力的接触件的定位部件（25）。还提供了使用和制造这些装置的方法。这些装置和方法允许廉价，有效，易于控制的热处理。

7. 发明授权

US08389422B2 Rapid thermal processing by stamping 有权
标题翻译：快速热处理冲压
公开(公告)号：US08389422B2
公开(公告)日：2013-03-05
申请号：US12675117
申请日：2007-08-31
申请人： Pauls Stradins , Qi Wang
发明人： Pauls Stradins , Qi Wang
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , H01L21/67103 , Y10T29/49826
摘要： A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.
摘要翻译：提供快速热处理装置和方法用于诸如半导体晶片的样品的热处理。该装置具有包括具有冲压表面的印模（35）和使其处于选定的处理温度的加热器或冷却器（40）的部件，用于将样品（10）保持在适当位置的样品保持器（20），以便与冲压表面; 以及用于将冲压表面和印模（35）移动到和远离紧密的基本上无压力的接触件的定位部件（25）。还提供了使用和制造这些装置的方法。这些装置和方法允许廉价，有效，易于控制的热处理。

8. 发明授权

US08239165B1 Ultra-fast determination of quantum efficiency of a solar cell 有权
标题翻译：超快速测定太阳能电池的量子效率
公开(公告)号：US08239165B1
公开(公告)日：2012-08-07
申请号：US12237452
申请日：2008-09-25
申请人： David L. Young , Brian Egaas , Pauls Stradins
发明人： David L. Young , Brian Egaas , Pauls Stradins
IPC分类号： G06F11/30 , G06F11/00
CPC分类号： H02S50/10
摘要： An apparatus for measuring quantum efficiency (QE) of solar cells. The apparatus includes a light source including an array of light emitting diodes (LEDs) that each emit light corresponding to a differing portion of a test spectrum and each LED is driven by a sinusoidal power supply that operates at a unique frequency. The light source includes an optical coupling focusing the LED light into a test beam targeted on a solar cell, and a signal conditioner converts analog current signals generated by the solar cell into digital voltage signals. A QE measurement module determines a QE value corresponding to each of the LEDs based on the digital voltage signals using a Fast Fourier Transform module that processes the digital voltage signals to generate values for each operating frequency. The QE measurement module determines the QE values by applying a conversion factor to these values. Since all the LEDs can be power-modulated simultaneously and the corresponding cell responses to each of the LEDS can be analyzed simultaneously, the QE spectrum measurement time is greatly shortened as compared to conventional methods.
摘要翻译：一种用于测量太阳能电池的量子效率（QE）的装置。该装置包括一个光源，该光源包括一组发光二极管（LED），每个发光二极管发射对应于测试光谱不同部分的光，每个LED由以唯一频率工作的正弦电源驱动。光源包括将LED光聚焦到目标在太阳能电池上的测试光束中的光耦合器，并且信号调节器将由太阳能电池产生的模拟电流信号转换为数字电压信号。 QE测量模块基于使用快速傅立叶变换模块的数字电压信号来确定与每个LED相对应的QE值，该模块处理数字电压信号以产生每个工作频率的值。 QE测量模块通过将转换因子应用于这些值来确定QE值。由于可以同时对所有LED进行功率调制，并且可以同时分析对每个LED的相应的单元响应，所以与常规方法相比，QE光谱测量时间大大缩短。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式