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1. 发明授权

US6023485A Vertical cavity surface emitting laser array with integrated photodetector 失效
标题翻译：具有集成光电检测器的垂直腔表面发射激光器阵列
公开(公告)号：US6023485A
公开(公告)日：2000-02-08
申请号：US024628
申请日：1998-02-17
申请人： Paul R. Claisse , Wenbin Jiang
发明人： Paul R. Claisse , Wenbin Jiang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/2059 , H01S5/423
摘要： A vertical cavity surface emitting laser array with an integrated PIN photodiode. The PIN photodiode includes a first region of a first doped material, a second region of an undoped material and a third region composed of an n-doped stack of distributed Bragg reflectors. The vertical cavity surface emitting laser includes the n-type stack of distributed Bragg reflectors, an active, and a p-type stack of distributed Bragg reflectors so as to define an optical pathway through which light is generated and passes. The integrated device allows for automatic power control of each of the individual devices forming the array by sequentially scanning the individual devices and generating feedback signals.
摘要翻译：具有集成PIN光电二极管的垂直腔表面发射激光器阵列。 PIN光电二极管包括第一掺杂材料的第一区域，未掺杂材料的第二区域和由分布布拉格反射器的n掺杂叠层构成的第三区域。垂直腔表面发射激光器包括分布式布拉格反射器的n型叠层，分布式布拉格反射器的有源和p型叠层，以便限定产生和通过光的光学路径。集成器件允许通过顺序扫描各个器件并产生反馈信号来对形成阵列的各个器件进行自动功率控制。

2. 发明授权

US06185240B2 Semiconductor laser having electro-static discharge protection 失效
标题翻译：具有静电放电保护的半导体激光器
公开(公告)号：US06185240B2
公开(公告)日：2001-02-06
申请号：US09015896
申请日：1998-01-30
申请人： Wenbin Jiang , Paul R. Claisse , Philip A. Kiely
发明人： Wenbin Jiang , Paul R. Claisse , Philip A. Kiely
IPC分类号： H01S319
CPC分类号： H01S5/183 , H01L27/15 , H01S5/0261 , H01S5/0425 , H01S5/06825
摘要： A vertical cavity surface emitting laser (103) and a diode (105) is provided. The diode (105) is electrically coupled in reverse parallel to the vertical cavity surface emitting laser (103), thereby providing a portion of protection against electro-static discharge damage to the vertical cavity surface emitting laser (103).
摘要翻译：提供了垂直腔表面发射激光器（103）和二极管（105）。二极管（105）与垂直空腔表面发射激光器（103）反向并联地电耦合，从而提供一部分保护以防止对垂直腔表面发射激光器（103）的静电放电损坏。

3. 发明授权

US6084900A Annular waveguide vertical cavity surface emitting laser array and method of fabrication 失效
标题翻译：环形波导垂直腔表面发射激光器阵列及其制造方法
公开(公告)号：US6084900A
公开(公告)日：2000-07-04
申请号：US998365
申请日：1997-12-24
申请人： Paul R. Claisse , Philip A. Kiely , Jamal Ramdani , Wenbin Jiang
发明人： Paul R. Claisse , Philip A. Kiely , Jamal Ramdani , Wenbin Jiang
IPC分类号： H01S5/40 , H01S5/42 , H01S3/23 , H01S3/085
CPC分类号： H01S5/423 , H01S2301/18 , H01S2301/203 , H01S5/18327 , H01S5/18344 , H01S5/18391 , H01S5/4087
摘要： An array of annular waveguide VCSELs for achieving a stable single high order mode light source characterized as emitting a plurality of emission beams of varying wavelengths. The device array including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack is etched to define a first VCSEL and at least one additional VCSEL, each VCSEL including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.
摘要翻译：用于实现稳定的单个高阶模式光源的环形波导VCSEL的阵列，其特征在于发射多个不同波长的发射光束。该器件阵列包括在与有源区匹配的Al x Ga 1-x As / Al y Ga 1-y As材料体系晶格中具有镜对的第一反射镜叠层。有源区包括夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间的有源结构，该有源结构具有至少一个量子阱。 VCSEL还包括与第二包层区域匹配的第二反射镜堆叠晶格并且在Al x Ga 1-x As / Al y Ga 1-y As材料体系中具有镜对。蚀刻第二反射镜叠层以限定第一VCSEL和至少一个附加VCSEL，每个VCSEL包括蚀刻区域，由此限定环形发射区域，通过该环形发射区域发射由环形波导VCSEL产生的光。

4. 发明授权

US06151344A Automatic power control of semiconductor laser 失效
标题翻译：半导体激光器自动功率控制
公开(公告)号：US06151344A
公开(公告)日：2000-11-21
申请号：US50205
申请日：1998-03-30
申请人： Philip Kiely , Paul R. Claisse
发明人： Philip Kiely , Paul R. Claisse
IPC分类号： H01S5/026 , H01S5/183 , H01S3/00 , H01S5/00
CPC分类号： H01S5/183 , H01S5/0264 , H01S5/0683
摘要： Automatic power control of a semiconductor laser (12, 72) is achieved by monitoring the spontaneous lateral emissions from the semiconductor laser and adjusting the drive signal to the laser based on the detected emissions. A lateral detector (13, 73) generates a photocurrent from the spontaneous emissions. The detector signal (Ilat) is compared to a reference signal (Iref) and the difference is applied to the drive signal (Ilas) to alter or control the laser output. The magnitudes of the reference signal source and the drive signal source are determined and set based on the desired optical output power of the semiconductor laser measured at a series of temperatures.
摘要翻译：通过监测来自半导体激光器的自发横向发射并基于检测到的发射来调整到激光器的驱动信号来实现半导体激光器（12,72）的自动功率控制。横向检测器（13,73）从自发发射产生光电流。将检测器信号（Ilat）与参考信号（Iref）进行比较，并将差值施加到驱动信号（Ilas）以改变或控制激光输出。基于在一系列温度下测量的半导体激光器的期望的光输出功率来确定和设置参考信号源和驱动信号源的大小。

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