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    • 2. 发明授权
    • Process for forming vertical gap in a thin film magnetic transducer
    • 在薄膜磁换能器中形成垂直间隙的工艺
    • US5600880A
    • 1997-02-11
    • US440513
    • 1995-05-12
    • Hugo A. E. SantiniClinton D. Snyder
    • Hugo A. E. SantiniClinton D. Snyder
    • G11B5/23G11B5/31G11B5/42
    • G11B5/3163G11B5/3183G11B5/232Y10T29/49044Y10T29/49046
    • In the manufacture of a thin-film magnetic head having a vertical gap, auxiliary support is provided at the ends of a gap wall prior to formation of the magnetic poles. In a preferred embodiment, a pit is defined in a substrate and a release layer is deposited on the substrate followed by a layer of alumina. A recess is then etched through the alumina layer to the release layer in the pit. A partial layer of polymer or metal is deposited with a vertical edge across the median of the pit and recess. A layer of nonmagnetic wall material such as silicon oxide is deposited which after etching leaves a wall against the vertical edge of the partial layer. After removal of the partial layer, a vertical wall extends transversely across the recess and pit with the ends of the wall anchored and supported at the recess sidewalls. Alternatively, a pedestal may be provided in the recess to support each end of the wall. The magnetic poles are then formed simultaneously on either side of the wall. Other thin film layers are then deposited in an appropriate sequence of steps to complete the desired vertical gap, horizontal head structure. The substrate is separated from the completed thin film structure by dissolving the release layers.
    • 在具有垂直间隙的薄膜磁头的制造中,在形成磁极之前,在间隙壁的端部设置辅助支撑。 在一个优选实施例中,凹坑被限定在基底中,并且释放层沉积在基底上,随后是一层氧化铝。 然后将凹槽通过氧化铝层蚀刻到凹坑中的释放层。 聚合物或金属的一部分层沉积有跨越凹坑和凹槽中间的垂直边缘。 沉积一层非磁性壁材料,例如氧化硅,其在蚀刻之后离开部分层的垂直边缘的壁。 在去除部分层之后,垂直壁横向延伸穿过凹部和凹坑,壁的端部锚固并支撑在凹陷侧壁处。 或者,可以在凹部中设置基座以支撑壁的每个端部。 然后在壁的任一侧同时形成磁极。 然后以适当的步骤顺序沉积其它薄膜层,以完成所需的垂直间隙,水平头部结构。 通过溶解剥离层将基底与完成的薄膜结构分离。