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1. 发明申请

US20070012975A1 Coated conductors 有权
标题翻译：涂层导体
公开(公告)号：US20070012975A1
公开(公告)日：2007-01-18
申请号：US11486731
申请日：2006-07-13
申请人： Paul Arendt , Stephen Foltyn , Liliana Stan , Igor Usov , Haiyan Wang
发明人： Paul Arendt , Stephen Foltyn , Liliana Stan , Igor Usov , Haiyan Wang
IPC分类号： H01L29/94
CPC分类号： H01L39/2461
摘要： Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.
摘要翻译：提供了包括其上具有IBAD取向材料层的基底基材和选自锆酸钡，铪酸钡，钛酸钡，钛酸钡钡，锆酸镝钡，钡钡锶钡的钡基材料层钕锆酸镧和锆酸钡，或选自稀土锆酸盐和稀土铪的立方体金属氧化物材料在IBAD取向材料层上。这样的制品还可以包括选自锆酸钡，铪酸钡，钛酸钡，钛酸锶钡，锆酸镧锆，锆酸钕锆酸钡等的含钡材料层的高温超导氧化物如YBCO的薄膜，以及钡锆酸钡或选自稀土锆酸盐和稀土铪矿的立方金属氧化物材料。

2. 发明申请

US20070026136A1 Process for improvement of IBAD texturing on substrates in a continuous mode 审中-公开
标题翻译：在连续模式下在基板上改进IBAD纹理的方法
公开(公告)号：US20070026136A1
公开(公告)日：2007-02-01
申请号：US11191362
申请日：2005-07-27
申请人： Paul Arendt , Raymond DePaula , Liliana Stan , Igor Usov , James Groves
发明人： Paul Arendt , Raymond DePaula , Liliana Stan , Igor Usov , James Groves
IPC分类号： B05D5/12 , C23C16/00 , C23C14/00
CPC分类号： C30B29/16 , C30B23/02
摘要： A process is disclosed of preparing a template layer of a biaxially oriented material by ion beam assisted deposition upon a length of a substrate within a vacuum deposition chamber, by passing a length of substrate across a cooling block within a vacuum deposition chamber, with the cooling block configured to contact the substrate and passing a cooled liquid or gas through said cooling block during deposition of said layer of biaxially oriented material by ion beam assisted deposition upon said length of substrate. Also, a process is disclosed of preparing a template layer of a biaxially oriented material by ion beam assisted deposition upon a length of a substrate within a vacuum deposition chamber, by contacting a substrate with a cooled gas from the group of argon, oxygen, nitrogen during the ion beam assisted deposition of the biaxially oriented material within the vacuum deposition chamber, the cooled gas exiting a series of openings in a cooling block within the vacuum deposition chamber, the cooling block configured to contact the substrate.
摘要翻译：公开了一种通过离子束辅助沉积在真空沉积室内的衬底长度上通过使一段衬底穿过真空沉积室内的冷却块而制备双轴取向材料的模板层的方法，其中冷却块，其被配置成接触所述基底并且通过所述长度的衬底上的离子束辅助沉积在所述双轴取向材料层沉积期间使冷却的液体或气体通过所述冷却块。此外，公开了一种通过离子束辅助沉积在真空沉积室内的衬底长度上制备双轴取向材料的模板层的方法，其通过使基底与来自氩，氧，氮的组的冷却气体接触在双轴取向材料在真空沉积室内的离子束辅助沉积期间，冷却的气体离开真空沉积室内的冷却块中的一系列开口，冷却块构造成接触基板。

3. 发明申请

US20060286784A1 Method for implantation of high dopant concentrations in wide band gap materials 失效
公开(公告)号：US20060286784A1
公开(公告)日：2006-12-21
申请号：US11438887
申请日：2006-05-23
申请人： Igor Usov , Paul Arendt
发明人： Igor Usov , Paul Arendt
IPC分类号： H01L21/00 , H01L21/425
CPC分类号： H01L21/26546 , H01L21/268 , H01L21/324
摘要： A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C. This combination produces high concentrations of dopants, while minimizing the defect concentration.

4. 发明授权

US07589004B2 Method for implantation of high dopant concentrations in wide band gap materials 失效
标题翻译：在宽带隙材料中注入高掺杂浓度的方法
公开(公告)号：US07589004B2
公开(公告)日：2009-09-15
申请号：US11438887
申请日：2006-05-23
申请人： Igor Usov , Paul N. Arendt
发明人： Igor Usov , Paul N. Arendt
IPC分类号： H01L21/04
CPC分类号： H01L21/26546 , H01L21/268 , H01L21/324
摘要： A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C. This combination produces high concentrations of dopants, while minimizing the defect concentration.
摘要翻译：将替代的低/中等离子剂量注入与较低温度下的快速热退火相结合的方法。通过多个注入循环将至少一种掺杂剂注入到宽带隙化合物的单晶和外延膜之一中。注入循环的次数足以将预定浓度的掺杂剂注入到单晶和外延膜之一中。每个注入循环包括以下步骤：将一种掺杂剂的预定浓度的一部分注入单晶和外延膜之一; 在预定温度下将单晶和外延膜和注入部分中的一个退火预定时间，以修复由注入引起的单晶和外延膜之一的损坏，并激活注入的掺杂剂; 并将退火的单晶和注入部分冷却至小于约100℃的温度。该组合产生高浓度的掺杂剂，同时使缺陷浓度最小化。

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