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1. 发明申请

US20120237001A1 PHONE TEST SET TDR 审中-公开
标题翻译：电话测试设置TDR
公开(公告)号：US20120237001A1
公开(公告)日：2012-09-20
申请号：US13048835
申请日：2011-03-15
申请人： Paul Alexander , Melissa Eiles , Paul S. Swanson , Russ Meyer , Danny L. Maupin , Sean O'Brien
发明人： Paul Alexander , Melissa Eiles , Paul S. Swanson , Russ Meyer , Danny L. Maupin , Sean O'Brien
IPC分类号： H04M1/24
CPC分类号： H04M3/306 , H04M3/308
摘要： A phone test set provides TDR capability in a hand held device, enabling measurements on phone lines including, distance to opens, distance to shorts, and distance to bridge taps.
摘要翻译：手机测试仪在手持设备中提供TDR功能，可以在电话线上进行测量，包括打开距离，距离短路和距离到桥接水龙头。

2. 发明授权

US06281131B1 Methods of forming electrical contacts 失效
标题翻译：形成电触点的方法
公开(公告)号：US06281131B1
公开(公告)日：2001-08-28
申请号：US09032261
申请日：1998-02-27
申请人： Terry Gilton , Casey Kurth , Russ Meyer , Phillip G. Wald
发明人： Terry Gilton , Casey Kurth , Russ Meyer , Phillip G. Wald
IPC分类号： H01L21302
CPC分类号： H01L21/02052 , H01L21/28512 , H01L21/28525 , H01L21/76802 , H01L21/76805 , Y10S438/953
摘要： A method of forming an electrical contact to semiconductive material includes forming an insulative layer over a contact area of semiconductive material. A contact opening is etched through the insulative layer to the semiconductive material contact area. Such etching changes an outer portion of the semiconductive material exposed by the etching. The change is typically in the form of modifying crystalline structure of only an outer portion from that existing prior to the etch. The changed outer portion of the semiconductive material is etched substantially selective relative to semiconductive material therebeneath which is unchanged. The preferred etching chemistry is a tetramethyl ammonium hydroxide solution. A conductive material within the contact opening is formed in electrical connection with the semiconductive material. In another aspect, the changed outer portion is etched with a basic solution regardless of selectivity in the etch relative to semiconductive material therebeneath which is unchanged by the contact opening etch. The preferred conductive material is conductively doped semiconductive material which is formed in the contact opening to be in contact with semiconductive material which is unchanged. Further, the conductive material within the contact opening is preferably void of any silicide material.
摘要翻译：形成与半导体材料的电接触的方法包括在半导体材料的接触区域上形成绝缘层。通过绝缘层将接触开口蚀刻到半导体材料接触区域。这种蚀刻改变由蚀刻暴露的半导体材料的外部部分。该变化通常是仅在蚀刻之前从存在的外部部分修改晶体结构的形式。相对于其下的半导体材料，半导体材料的改变的外部部分被大大选择性地蚀刻，其不变。优选的蚀刻化学性质是四甲基氢氧化铵溶液。接触开口内的导电材料形成为与半导体材料电连接。在另一方面，改变的外部部分用碱性溶液进行蚀刻，而不管蚀刻中相对于半导体材料的选择性如何，其中接触开口蚀刻不变。优选的导电材料是形成在接触开口中以与半导体材料接触的导电掺杂半导体材料，其不变。此外，接触开口内的导电材料优选不含任何硅化物材料。

3. 发明授权

US06472328B2 Methods of forming an electrical contact to semiconductive material 有权
标题翻译：形成与半导体材料的电接触的方法
公开(公告)号：US06472328B2
公开(公告)日：2002-10-29
申请号：US09896773
申请日：2001-06-29
申请人： Terry Gilton , Casey Kurth , Russ Meyer , Phillip G. Wald
发明人： Terry Gilton , Casey Kurth , Russ Meyer , Phillip G. Wald
IPC分类号： H01L21302
CPC分类号： H01L21/02052 , H01L21/28512 , H01L21/28525 , H01L21/76802 , H01L21/76805 , Y10S438/953
摘要： A method of forming an electrical contact to semiconductive material includes forming an insulative layer over a contact area of semiconductive material. A contact opening is etched through the insulative layer to the semiconductive material contact area. Such etching changes an outer portion of the semiconductive material exposed by the etching. The change is typically in the form of modifying crystalline structure of only an outer portion from that existing prior to the etch. The changed outer portion of the semiconductive material is etched substantially selective relative to semiconductive material therebeneath which is unchanged. The preferred etching chemistry is a tetramethyl ammonium hydroxidde solution. A conductive material within the contact opening is formed in electrical connection with the semiconductive material. In another aspect, the changed outer portion is etched with a basic solution regardless of selectivity in the etch relative to semiconductive material therebeneath which is unchanged by the contact opening etch. The preferred conductive material is conductively doped semiconductive material which is formed in the contact opening to be in contact with semiconductive material which is unchanged. Further, the conductive material within the contact opening is preferably void of any silicide material.
摘要翻译：形成与半导体材料的电接触的方法包括在半导体材料的接触区域上形成绝缘层。通过绝缘层将接触开口蚀刻到半导体材料接触区域。这种蚀刻改变由蚀刻暴露的半导体材料的外部部分。该变化通常是仅在蚀刻之前从存在的外部部分修改晶体结构的形式。相对于其下的半导体材料，半导体材料的改变的外部部分被大大选择性地蚀刻，其不变。优选的蚀刻化学性质是四甲基氢氧化铵溶液。接触开口内的导电材料形成为与半导体材料电连接。在另一方面，改变的外部部分用碱性溶液进行蚀刻，而不管蚀刻中相对于半导体材料的选择性如何，其中接触开口蚀刻不变。优选的导电材料是形成在接触开口中以与半导体材料接触的导电掺杂半导体材料，其不变。此外，接触开口内的导电材料优选不含任何硅化物材料。

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