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1. 发明授权

US08432644B2 Spin torque oscillator sensor enhanced by magnetic anisotropy 有权
标题翻译：旋转扭矩振荡器传感器通过磁各向异性增强
公开(公告)号：US08432644B2
公开(公告)日：2013-04-30
申请号：US12884080
申请日：2010-09-16
申请人： Patrick M. Braganca , Bruce A. Gurney
发明人： Patrick M. Braganca , Bruce A. Gurney
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G01R33/098 , G01R33/1284 , H01L43/08
摘要： A spin torque oscillator device having a magnetic free layer with a magnetic anisotropy that has a component that is oriented perpendicular to a direction of an applied magnetic field. The spin torque oscillator device includes a magnetic reference layer, a magnetic free layer and a non-magnetic layer sandwiched there-between. A component of the magnetic anisotropy of the free layer can be oriented perpendicular to a magnetization of the reference layer, and this orientation relative to the magnetization of the reference layer can be either in lieu of or in addition to its orientation relative to the applied magnetic field. The magnetic anisotropy cants the magnetization of the free layer which would otherwise be oriented antiparallel with the magnetization of the reference layer. The magnetic anisotropy in the free layer improves performance of the spin torque sensor by reducing noise.
摘要翻译：具有具有磁各向异性的磁性自由层的自旋扭矩振荡器装置，其具有垂直于施加的磁场方向取向的分量。自旋扭矩振荡器装置包括磁性参考层，无磁性层和夹在其间的非磁性层。自由层的磁各向异性的分量可以垂直于参考层的磁化取向，并且相对于参考层的磁化的这种取向可以代替或除了其相对于所施加的磁性的取向领域。磁各向异性可以使自由层的磁化强度反而与参考层的磁化反平行。自由层中的磁各向异性通过降低噪声提高了自旋转矩传感器的性能。

2. 发明申请

US20110007431A1 SPIN TORQUE OSCILLATOR SENSOR ENHANCED BY MAGNETIC ANISOTROPY 有权
标题翻译：旋转扭矩振动传感器由磁力异相增强
公开(公告)号：US20110007431A1
公开(公告)日：2011-01-13
申请号：US12884080
申请日：2010-09-16
申请人： Patrick M. Braganca , Bruce A. Gurney
发明人： Patrick M. Braganca , Bruce A. Gurney
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , G01R33/098 , G01R33/1284 , H01L43/08
摘要： A spin torque oscillator device having a magnetic free layer with a magnetic anisotropy that has a component that is oriented perpendicular to a direction of an applied magnetic field. The spin torque oscillator device includes a magnetic reference layer, a magnetic free layer and a non-magnetic layer sandwiched there-between. A component of the magnetic anisotropy of the free layer can be oriented perpendicular to a magnetization of the reference layer, and this orientation relative to the magnetization of the reference layer can be either in lieu of or in addition to its orientation relative to the applied magnetic field. The magnetic anisotropy cants the magnetization of the free layer which would otherwise be oriented antiparallel with the magnetization of the reference layer. The magnetic anisotropy in the free layer improves performance of the spin torque sensor by reducing noise.
摘要翻译：具有具有磁各向异性的磁性自由层的自旋扭矩振荡器装置，其具有垂直于施加的磁场方向取向的分量。自旋扭矩振荡器装置包括磁性参考层，无磁性层和夹在其间的非磁性层。自由层的磁各向异性的分量可以垂直于参考层的磁化取向，并且相对于参考层的磁化的该取向可以代替或除了其相对于所施加的磁性的取向领域。磁各向异性可以使自由层的磁化强度反而与参考层的磁化反平行。自由层中的磁各向异性通过降低噪声提高了自旋转矩传感器的性能。

3. 发明授权

US08164861B2 Spin torque oscillator sensor employing antiparallel coupled oscilation layers 有权
标题翻译：采用反平行耦合振荡层的旋转扭矩振荡器传感器
公开(公告)号：US08164861B2
公开(公告)日：2012-04-24
申请号：US12636108
申请日：2009-12-11
申请人： Patrick M. Braganca , Bruce A. Gurney
发明人： Patrick M. Braganca , Bruce A. Gurney
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/1284 , G11B5/332 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L43/08
摘要： A spin torque magnetoresistive sensor having a very small gap thickness. The sensor operates by measuring the change in frequency of a spin torque induced magnetic oscillation in magnetic layers of the sensor to detect the presence of a magnetic field. The sensor includes a pair of free magnetic layers that are antiparallel coupled by a thin non-magnetic coupling layer there-between. The sensor does not include a pinned layer structure nor an associated AFM pinning layer, which allows the sensor to be constructed much thinner than prior art sensors.
摘要翻译：具有非常小间隙厚度的自旋扭矩磁阻传感器。传感器通过测量传感器的磁层中的自旋转矩感应磁振荡的频率变化来检测磁场的存在来进行操作。传感器包括一对自由磁性层，它们之间由薄的非磁性耦合层反平行耦合。传感器不包括钉扎层结构和相关联的AFM钉扎层，这允许传感器构造得比现有技术传感器薄得多。

4. 发明申请

US20110141629A1 SPIN TORQUE OSCILLATOR SENSOR EMPLOYING ANTIPARALLEL COUPLED OSCILATION LAYERS 有权
标题翻译：旋转扭矩振荡器传感器采用反极化耦合振荡层
公开(公告)号：US20110141629A1
公开(公告)日：2011-06-16
申请号：US12636108
申请日：2009-12-11
申请人： Patrick M. Braganca , Bruce A. Gurney
发明人： Patrick M. Braganca , Bruce A. Gurney
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/1284 , G11B5/332 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L43/08
摘要： A spin torque magnetoresistive sensor having a very small gap thickness. The sensor operates by measuring the change in frequency of a spin torque induced magnetic oscillation in magnetic layers of the sensor to detect the presence of a magnetic field. The sensor includes a pair of free magnetic layers that are antiparallel coupled by a thin non-magnetic coupling layer there-between. The sensor does not include a pinned layer structure nor an associated AFM pinning layer, which allows the sensor to be constructed much thinner than prior art sensors.
摘要翻译：具有非常小间隙厚度的自旋扭矩磁阻传感器。传感器通过测量传感器的磁层中的自旋转矩感应磁振荡的频率变化来检测磁场的存在来进行操作。传感器包括一对自由磁性层，它们之间由薄的非磁性耦合层反平行耦合。传感器不包括钉扎层结构和相关联的AFM钉扎层，这允许传感器构造得比现有技术传感器薄得多。

5. 发明授权

US5206590A Magnetoresistive sensor based on the spin valve effect 失效
标题翻译：基于旋转阀效应的磁传感器
公开(公告)号：US5206590A
公开(公告)日：1993-04-27
申请号：US625343
申请日：1990-12-11
申请人： Bernard Dieny , Bruce A. Gurney , Steven E. Lambert , Daniele Mauri , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bernard Dieny , Bruce A. Gurney , Steven E. Lambert , Daniele Mauri , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B2005/0018 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

6. 发明授权

US5159513A Magnetoresistive sensor based on the spin valve effect 失效
标题翻译：基于旋转阀效应的磁传感器
公开(公告)号：US5159513A
公开(公告)日：1992-10-27
申请号：US652852
申请日：1991-02-08
申请人： Bernard Dieny , Bruce A. Gurney , Serhat Metin , Stuart S. P. Parkin , Virgil S. Speriosu
发明人： Bernard Dieny , Bruce A. Gurney , Serhat Metin , Stuart S. P. Parkin , Virgil S. Speriosu
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/16 , H01F10/32 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F10/3281 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate includes a first and a second thin film layer of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.

7. 发明授权

US09305571B2 Magnetic devices and magnetic media with graphene overcoat 有权
标题翻译：磁性器件和磁性介质与石墨烯外涂层
公开(公告)号：US09305571B2
公开(公告)日：2016-04-05
申请号：US12646851
申请日：2009-12-23
申请人： Bruce A. Gurney , Ernesto E. Marinero , Simone Pisana
发明人： Bruce A. Gurney , Ernesto E. Marinero , Simone Pisana
IPC分类号： G11B5/72 , G11B5/31 , G11B5/84 , G11B5/10
CPC分类号： G11B5/3106 , G11B5/102 , G11B5/72 , G11B5/8408
摘要： A magnetic disk according to one embodiment includes a recording layer; and a layer of graphene formed above the recording layer. A nucleation layer may be formed between the recording layer and the graphene layer in some approaches. A magnetic device according to another embodiment includes a transducer; a nucleation layer formed above the transducer; and a layer of graphene formed on the nucleation layer. A method according to one embodiment includes forming a nucleation layer above a magnetic layer of a magnetic disk or magnetic device; and forming a layer of graphene on the nucleation layer. A method according to another embodiment includes depositing SiC above a magnetic layer of a magnetic disk or magnetic device, the SiC being equivalent to several monolayers thick; and surface heating the SiC to selectively evaporate some of the Si from the SiC for forming a layer of graphene on a SiC layer. Additional products and methods are also presented.
摘要翻译：根据一个实施例的磁盘包括记录层; 以及形成在记录层上方的一层石墨烯。在一些方法中，可以在记录层和石墨烯层之间形成成核层。根据另一实施例的磁性装置包括换能器; 形成在换能器上方的成核层; 并在成核层上形成一层石墨烯。根据一个实施方案的方法包括在磁盘或磁性装置的磁性层上形成成核层; 并在成核层上形成一层石墨烯。根据另一实施例的方法包括在磁盘或磁性装置的磁性层上沉积SiC，所述SiC相当于多个单层厚度; 并表面加热SiC以选择性地从SiC中蒸发出一些Si，以在SiC层上形成一层石墨烯。还介绍了其他产品和方法。

8. 发明申请

US20110151278A1 MAGNETIC DEVICES AND MAGNETIC MEDIA WITH GRAPHENE OVERCOAT 有权
标题翻译：磁性装置和磁性介质与石墨OVERCOAT
公开(公告)号：US20110151278A1
公开(公告)日：2011-06-23
申请号：US12646851
申请日：2009-12-23
申请人： Bruce A. Gurney , Ernesto E. Marinero , Simone Pisana
发明人： Bruce A. Gurney , Ernesto E. Marinero , Simone Pisana
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/3106 , G11B5/102 , G11B5/72 , G11B5/8408
摘要： A magnetic disk according to one embodiment includes a recording layer; and a layer of graphene formed above the recording layer. A nucleation layer may be formed between the recording layer and the graphene layer in some approaches. A magnetic device according to another embodiment includes a transducer; a nucleation layer formed above the transducer; and a layer of graphene formed on the nucleation layer. A method according to one embodiment includes forming a nucleation layer above a magnetic layer of a magnetic disk or magnetic device; and forming a layer of graphene on the nucleation layer. A method according to another embodiment includes depositing SiC above a magnetic layer of a magnetic disk or magnetic device, the SiC being equivalent to several monolayers thick; and surface heating the SiC to selectively evaporate some of the Si from the SiC for forming a layer of graphene on a SiC layer. Additional products and methods are also presented.
摘要翻译：根据一个实施例的磁盘包括记录层; 以及形成在记录层上方的一层石墨烯。在一些方法中，可以在记录层和石墨烯层之间形成成核层。根据另一实施例的磁性装置包括换能器; 形成在换能器上方的成核层; 并在成核层上形成一层石墨烯。根据一个实施方案的方法包括在磁盘或磁性装置的磁性层上形成成核层; 并在成核层上形成一层石墨烯。根据另一实施例的方法包括在磁盘或磁性装置的磁性层上沉积SiC，所述SiC相当于多个单层厚度; 并表面加热SiC以选择性地从SiC中蒸发出一些Si，以在SiC层上形成一层石墨烯。还介绍了其他产品和方法。

9. 发明授权

US07170722B2 Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by a ferromagnetic multilayer 有权
标题翻译：非常磁阻传感器，通过铁磁多层垂直磁偏置
公开(公告)号：US07170722B2
公开(公告)日：2007-01-30
申请号：US10903173
申请日：2004-07-30
申请人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3932 , G11B5/3993 , G11B2005/0008 , G11B2005/0016
摘要： An extraordinary magnetoresistance (EMR) sensor uses a ferromagnetic multilayer to provide perpendicular magnetic biasing for the sensor. The ferromagnetic multilayer has intrinsic perpendicular magnetic anisotropy and is preferably on top of the EMR active film. The multilayer comprises alternating films of Co, Fe or CoFe and Pt, Pd or PtPd with the preferred multilayer being alternating Co/Pt or Co/Pd films. A diffusion barrier may be located between the EMR active film and the ferromagnetic multilayer.
摘要翻译：非常大的磁阻（EMR）传感器使用铁磁多层来为传感器提供垂直磁偏置。铁磁性多层膜具有固有的垂直磁各向异性，优选在EMR活性膜的顶部。多层包括Co，Fe或CoFe和Pt，Pd或PtPd的交替膜，优选的多层是交替的Co / Pt或Co / Pd膜。扩散阻挡层可以位于EMR活性膜和铁磁性多层之间。

10. 发明授权

US06756128B2 Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier 有权
标题翻译：具有改善隧道势垒的低电阻高磁阻磁隧道结装置
公开(公告)号：US06756128B2
公开(公告)日：2004-06-29
申请号：US10291119
申请日：2002-11-07
申请人： Matthew J. Carey , Bruce A. Gurney , Yongho Ju
发明人： Matthew J. Carey , Bruce A. Gurney , Yongho Ju
IPC分类号： G11C1102
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , Y10T428/1114
摘要： A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk drive, has a titanium oxynitride (TiOxNy) layer as the single-layer tunnel barrier or as one of the layers in a bilayer tunnel barrier. In a bilayer barrier the other barrier layer is an oxide or nitride of Al, Si, Mg, Ta, [[Si]] and Y, such as Al2O3, AlN, Si3N4, MgO, Ta2O5, TiO2, or Y2O3. The Ti barrier material can be alloyed with other known metals, such as Al and Mg, to produce barriers with TiAlOxNy and TiMgOxNy compositions.
摘要翻译：诸如磁性随机存取存储器（MRAM）阵列中的存储单元或磁记录盘驱动器中的磁阻读取头的低电阻磁隧道结装置具有氧氮化钛（TiO x N y）层作为单层隧道屏障或作为双层隧道屏障中的层之一。在双层阻挡层中，另一阻挡层是Al，Si，Mg，Ta，[[Si]]和Y的氧化物或氮化物，例如Al 2 O 3，AlN，Si 3 N 4，MgO，Ta 2 O 5，TiO 2或Y 2 O 3。 Ti阻挡材料可以与其它已知的金属如Al和Mg合金化，以产生具有TiAlO x N y和TiMgO x N y组合物的阻挡层。

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