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    • 5. 发明授权
    • Biomarkers of vulnerable atherosclerotic plaques and methods of use
    • 脆弱动脉粥样硬化斑块的生物标志物和使用方法
    • US07560227B2
    • 2009-07-14
    • US11365127
    • 2006-02-28
    • Young H. KimDucksoo KimMary Rusckowski
    • Young H. KimDucksoo KimMary Rusckowski
    • C12Q1/00C07K7/08C07K14/00
    • C07K14/47C07K7/08C07K14/001G01N33/573G01N33/57484G01N2333/908
    • The present invention provides compositions suitable for use as biomarkers of vulnerable plaques as well as methods for the use of such compositions. In preferred embodiments, specific molecular imaging agents are provided that permit the selective identification of vulnerable plaques in coronary and other arteries using non-invasive imaging methods. Such specific molecular imaging agents comprise a binding partner linked to a detectable label that can be used in vivo to visualize vulnerable plaques. In certain preferred embodiments, the binding partner is a peptide that binds selectively to a component of a vulnerable plaque. In other preferred embodiments, the binding partner is an antibody that binds selectively to a component of a vulnerable plaque. In other preferred embodiments, the binding partner is a portion of a polypeptide displayed by a bacteriophage that binds selectively to a component of a vulnerable plaque. In preferred embodiments, the component of a vulnerable plaque is myeloperoxidase or a portion thereof.
    • 本发明提供适合用作脆弱斑块生物标志物的组合物以及使用这种组合物的方法。 在优选的实施方案中,提供了允许使用非侵入性成像方法在冠状动脉和其他动脉中选择性鉴定易受伤害斑块的特定分子显像剂。 这样的特异性分子显像剂包含与可检测标记连接的结合配偶体,其可以在体内用于使脆弱的斑块可视化。 在某些优选的实施方案中,结合配偶体是选择性地结合易损斑块的组分的肽。 在其它优选的实施方案中,结合配偶体是选择性结合易损斑块组分的抗体。 在其它优选实施方案中,结合配偶体是通过噬菌体展示的多肽展示的部分,所述噬菌体选择性地结合易损斑块的成分。 在优选的实施方案中,脆性斑块的组分是髓过氧化物酶或其一部分。
    • 7. 发明授权
    • Radio frequency power device improvement
    • 射频功率器件改进
    • US06331931B1
    • 2001-12-18
    • US09677926
    • 2000-10-03
    • John H. TitizianJeffrey A. BurgerYoung H. Kim
    • John H. TitizianJeffrey A. BurgerYoung H. Kim
    • H01G4228
    • H01L23/642H01L23/66H01L24/48H01L24/49H01L28/40H01L2223/6644H01L2224/48091H01L2224/48137H01L2224/49107H01L2224/49175H01L2224/73265H01L2924/00014H01L2924/01006H01L2924/01014H01L2924/01023H01L2924/01031H01L2924/01032H01L2924/01042H01L2924/01049H01L2924/01074H01L2924/01075H01L2924/01077H01L2924/01079H01L2924/014H01L2924/10253H01L2924/1305H01L2924/15787H01L2924/19041H01L2924/19042H01L2924/30105H01L2924/30107H01L2924/3011H01L2924/30111H01L2924/00H01L2224/45099
    • An radio frequency (RF)/microwave power amplification circuit is disclosed herein having improved power and frequency characteristics. The RF power circuit is characterized by having the output capacitance of the device resonate with a shunt inductance that is physically closer to the device than provided in conventional RF power circuits. This is realized by mounting a direct current (DC) bypass capacitor directly on the same metalized pad that the device terminal is mounted on. By doing this, the inductance associated with a wire bond connection from the device to the capacitor is eliminated or at least reduced. Also disclosed is a dual cell power circuit that consists of matching the impedance characteristics of the active cells to each other by adjusting the circuit parameters in which the active devices interact with. In addition, an RF power circuit is disclosed that includes a pair of vertical cells in a parallel relationship formed on a thin semiconductor to cause more current flow through a metal layer rather than the lossy substrate. Furthermore, a novel metal-dielectric-metal chip capacitor is disclosed that is fabricated on a refractory metal substrate, which results in a high quality factor (Q) for the capacitor. The capacitor has contacts to both capacitor plates by way of its top metallization surfaces, and access to one of the plates through the bottom, i.e. the mounting surface of the capacitor. Additionally, a high power device is disclosed that encompasses at least some or all of the techniques described above to achieve an amplification that exhibits both high power and high cutoff frequency characteristics.
    • 本文公开了一种具有改进的功率和频率特性的射频(RF)/微波功率放大电路。 RF功率电路的特征在于,器件的输出电容与物理上更接近器件的分流电感谐振,而不是传统的RF功率电路中提供的。 这可以通过将直流(DC)旁路电容器直接安装在安装设备端子的同一金属化焊盘上来实现。 通过这样做,消除了或者至少减少了从器件到电容器的引线键合连接所引起的电感。 还公开了一种双电池电源电路,其包括通过调节有源器件与其相互作用的电路参数来将有源电池的阻抗特性彼此匹配。 此外,公开了一种RF功率电路,其包括在薄半导体上形成的平行关系的一对垂直单元,以使更多的电流流过金属层而不是有损的衬底。 此外,公开了一种新颖的金属介电金属片状电容器,其制造在难熔金属基片上,这导致电容器的高品质因数(Q)。 电容器通过其顶部金属化表面与两个电容器板接触,并通过底部,即电容器的安装表面进入其中一个板。 此外,公开了一种高功率器件,其涵盖上述技术中的至少一些或全部技术以实现具有高功率和高截止频率特性的放大。