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1. 发明专利

JP2010165804A Semiconductor device, electronic apparatus using the same, and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件，使用其的电子设备及制造半导体器件的方法
公开(公告)号：JP2010165804A
公开(公告)日：2010-07-29
申请号：JP2009006111
申请日：2009-01-14
申请人： Panasonic Corp , パナソニック株式会社
发明人： SANO HIKARI , FUJII KYOKO
IPC分类号： H01L21/3205 , H01L23/12 , H01L23/52 , H01L27/14 , H01L31/10
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/13 , H01L2224/13022 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01058 , H01L2924/01078 , H01L2924/10329 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a component formed in a recess of a semiconductor substrate capable of preventing a lowering in the yield and in reliability of the device, and to provide an electronic apparatus using the semiconductor device and a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes the semiconductor substrate 1 to which a through-hole 7 in which an insulating film 8 and a through-hole electrode 6 are formed are formed. The through-hole 7 of the semiconductor substrate 1 has a shape with its opening diameter gradually smaller in a depth direction, and steps having opening diameter smaller than that of an opening end of the through-hole 7 are formed on an inner wall of the through-hole 7. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种具有形成在半导体衬底的凹部中的部件的半导体器件，其能够防止器件的成品率和可靠性降低，并且提供使用该半导体器件的电子设备和一种半导体器件的制造方法。解决方案：半导体器件包括其中形成有绝缘膜8和通孔电极6的通孔7的半导体衬底1。半导体基板1的通孔7的深度方向上的开口直径逐渐变小，在通孔7的内壁形成开口直径比通孔7的开口端小的台阶通孔7.版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2012004326A Converter module and method for manufacturing the same 审中-公开
标题翻译：转换器模块及其制造方法
公开(公告)号：JP2012004326A
公开(公告)日：2012-01-05
申请号：JP2010137770
申请日：2010-06-16
申请人： Panasonic Corp , パナソニック株式会社
发明人： INOUE DAISUKE , FUJII KYOKO
IPC分类号： H01L29/84 , B81B3/00 , B81C3/00 , H01L25/16 , H04R19/04 , H04R31/00
CPC分类号： B81C1/00238 , B81B2201/0257 , B81B2207/012 , H01L23/552 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05554 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48157 , H01L2224/48227 , H01L2224/49 , H01L2224/73265 , H01L2224/78313 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1461 , H01L2924/3025 , H04R19/04 , H04R31/00 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/20752 , H01L2924/20753
摘要： PROBLEM TO BE SOLVED: To provide a converter module which has a converter and a rectangle semiconductor substrate on a rectangle substrate, and can achieve miniaturization and cost reduction.SOLUTION: The converter module comprises a substrate 2 having a rectangular shape; a converter 3 having a polygonal shape containing at least one of acute-angle apex; and a semiconductor substrate 4 having a rectangular shape. The converter 3 is arranged on the substrate 2 so that a first side of the substrate 2 is substantively parallel to one side of the converter 3, and the semiconductor substrate 4 is arranged on the substrate 2 so that the first side of the substrate 2 is substantively parallel to one side of the semiconductor substrate 4.
摘要翻译：要解决的问题：提供一种在矩形基板上具有转换器和矩形半导体衬底的转换器模块，并且可以实现小型化和降低成本。解决方案：转换器模块包括具有矩形形状的基板2; 具有包含锐角顶点中的至少一个的多边形形状的转换器3; 以及具有矩形形状的半导体衬底4。转换器3布置在基板2上，使得基板2的第一侧基本上平行于转换器3的一侧，并且半导体基板4布置在基板2上，使得基板2的第一侧为实质上平行于半导体衬底4的一侧。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011249430A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011249430A
公开(公告)日：2011-12-08
申请号：JP2010118829
申请日：2010-05-24
申请人： Panasonic Corp , パナソニック株式会社
发明人： FUJII KYOKO
IPC分类号： H01L23/34 , H01L21/3205 , H01L23/36 , H01L23/52
CPC分类号： H01L2224/16225 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce thermal resistance without increasing chip area and cost, and to provide a method for manufacturing the same.SOLUTION: A semiconductor device 100 comprises: a semiconductor substrate 1 having a semiconductor layer 1a and a wiring layer 1b; an active region 3 formed in the center of the semiconductor layer 1a from the surface thereof up to a predetermined depth; a connection electrode 4 formed in the active region 3 and on the wiring layer 1b on the periphery thereof and connected electrically with the semiconductor layer 1a; and a heat dissipation part which dissipates heat generated from the semiconductor layer 1a. The heat dissipation part has a heat dissipator 7 which fills at least one concave hole 5 formed from the rear face of the semiconductor layer 1a near to the active region 3.
摘要翻译：要解决的问题：提供一种能够降低热阻而不增加芯片面积和成本的半导体器件，并提供其制造方法。解决方案：半导体器件100包括：具有半导体层1a和布线层1b的半导体衬底1; 在半导体层1a的中心形成有效区域3，从表面到预定深度; 连接电极4，形成在有源区3和周边的布线层1b上，与半导体层1a电连接; 以及耗散从半导体层1a产生的热的散热部。散热部具有散热器7，该散热器7填充由靠近有源区域3的半导体层1a的背面形成的至少一个凹孔5.（C）2012，JPO＆INPIT

4. 发明专利

JP2010267736A Solid state image pickup element 审中-公开
标题翻译：固态图像拾取元件
公开(公告)号：JP2010267736A
公开(公告)日：2010-11-25
申请号：JP2009116873
申请日：2009-05-13
申请人： Panasonic Corp , パナソニック株式会社
发明人： FUJII KYOKO , NAKANO TAKAHIRO
IPC分类号： H01L27/14 , H01L21/3205 , H01L23/52 , H01L27/146
CPC分类号： H01L27/14632 , H01L23/481 , H01L27/14623 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To fix an electric potential of a light-shielding film without increasing a number of terminals of a package.
SOLUTION: A solid state image pickup element includes: a semiconductor substrate 1 in which a pixel section 20 including a plurality of pixels arrayed therein are formed; a wiring layer 13 formed on a surface opposite to a light-incident surface in the semiconductor substrate 1, wherein a plurality of wiring 3 including a driving signal line of the pixel section 20 are formed in the wiring layer; and a light-shielding film 5 formed on the light-incident surface of the semiconductor substrate 1 and shields a dark pixel from light, the dark pixel among the plurality of pixels determining a black signal. A pad 6 formed in the wiring layer 13 and being a portion of the wiring 3 and the light-shielding film 5 shielding a photodiode 2A as the dark pixel from light are electrically connected by means of wiring 10.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：在不增加封装的端子数量的情况下固定遮光膜的电位。固体摄像元件包括：形成包括排列在其中的多个像素的像素部20的半导体衬底1; 形成在与半导体衬底1中的光入射面相反的表面上的布线层13，其中在布线层中形成包括像素部20的驱动信号线的多个布线3; 以及形成在半导体衬底1的光入射表面上并遮蔽暗像素的光的遮光膜5，所述多个像素中的暗像素确定黑色信号。形成在布线层13中并且是布线3的一部分的衬垫6和屏蔽来自光的暗像素的光电二极管2A的遮光膜5通过布线10电连接。版权所有（C））2011，JPO＆INPIT

5. 发明专利

JP2010245645A Semiconductor device and manufacturing method therefor 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010245645A
公开(公告)日：2010-10-28
申请号：JP2009089574
申请日：2009-04-01
申请人： Panasonic Corp , パナソニック株式会社
发明人： UCHIUMI KATSUKI , FUJII KYOKO , NAKANO TAKAHIRO
IPC分类号： H04R1/02 , H01L29/84 , H04R19/04
CPC分类号： H04R19/04 , B81B2201/0257 , B81C1/0023 , H01L23/055 , H01L2224/48091 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a compact semiconductor device which has high microphone sensitivity, and a manufacturing method therefor.
SOLUTION: The semiconductor device is provided with: a conversion body 110 for converting sound pressure into an electrical signal; and an amplification element 140A which has an amplification circuit for amplifying the electrical signal converted by the conversion body 110. The conversion body 110 has a pedestal 112 formed with a cavity section 113 from a top surface to a bottom surface, and a vibrating film 111 which is arranged so as to plug the opening on the top surface side of the cavity section 113 and converts the sound pressure into the electrical signal by vibrating in response to the sound pressure. The amplification element 140A is arranged below the conversion body so as to plug the cavity section 113.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有高麦克风灵敏度的紧凑型半导体器件及其制造方法。解决方案：半导体器件设置有：转换体110，用于将声压转换成电信号; 以及放大元件140A，其具有放大电路，用于放大由转换体110转换的电信号。转换体110具有形成有从上表面到底面的空腔部113的基座112，振动膜111 其布置成将空腔部分113的顶表面侧上的开口塞住，并且响应于声压而通过振动将声压转换成电信号。放大元件140A布置在转换体的下方，以堵塞空腔部分113.版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009283902A Optical device and electronic apparatus including the same 审中-公开
标题翻译：光学装置和包括其的电子装置
公开(公告)号：JP2009283902A
公开(公告)日：2009-12-03
申请号：JP2009034233
申请日：2009-02-17
申请人： Panasonic Corp , パナソニック株式会社
发明人： FUJII KYOKO , NAKANO TAKAHIRO , SANO HIKARI
IPC分类号： H01L27/14 , H04N5/335 , H04N5/357 , H04N5/369
CPC分类号： H04N5/2253 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627
摘要： PROBLEM TO BE SOLVED: To inhibit degradation in image quality caused by light reaching a peripheral circuit unit other than a photoreceptive unit in an optical device such as an image sensor, etc.
SOLUTION: A semiconductor substrate 3 includes a photoreceptive unit 1 provided with a plurality of photoreceptors 1a, and a peripheral circuit unit 2 disposed around the photoreceptive unit 1. On the surface of the semiconductor substrate 3, a light entry device 4 is provided in an area corresponding to the photoreceptive unit 1. Further, a part of an area corresponding to the peripheral circuit unit 2 around the light entry device 4 is covered with a light shielding film 5.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决方案：为了抑制由光到达诸如图像传感器等的光学装置中的感光单元以外的外围电路单元的光引起的图像质量的劣化。解决方案：半导体基板3包括设置有多个感光体1a的光感受单元1和设置在感光单元1周围的外围电路单元2.在半导体基板3的表面上，在与感光单元1对应的区域中设置有光入射装置4。此外，与光入射装置4周围的外围电路单元2对应的区域的一部分被遮光膜5覆盖。（C）2010，JPO＆INPIT

7. 发明专利

JP2013118206A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013118206A
公开(公告)日：2013-06-13
申请号：JP2010069788
申请日：2010-03-25
申请人： Panasonic Corp , パナソニック株式会社
发明人： INOUE DAISUKE , FUJII KYOKO
IPC分类号： H01L23/12
CPC分类号： H01L25/0657 , H01L23/3114 , H01L23/481 , H01L27/14618 , H01L2224/16 , H01L2225/06513 , H01L2225/06541
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in image property and highly reliable, and which can be manufactured at low cost; and provide a manufacturing method of the semiconductor device.SOLUTION: In a semiconductor device, a translucent plate 17 is attached to a principal surface 11A of a semiconductor element 11. In particular, a light-receiving part 12 is covered with a first adhesion layer 15. At least a part of a region on the principal surface 11A of the semiconductor element 11 other than a region covered with the first adhesion layer 15 is covered with a second adhesion layer 16. The translucent plate 17 is attached to the principal surface 11A of the semiconductor element 11 via the first adhesion layer 15 and the second adhesion layer 16.
摘要翻译：要解决的问题：提供一种图像特性优异且可靠性高，可以低成本制造的半导体器件; 并提供半导体器件的制造方法。解决方案：在半导体器件中，半导体元件11的主表面11A附接有透光板17.特别地，受光部12被第一粘合层15覆盖。至少一部分半导体元件11的除了被第一粘合层15覆盖的区域以外的主表面11A上的区域被第二粘合层16覆盖。透光板17经由半导体元件11的主表面11A经由第一粘附层15和第二粘合层16.版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2010268412A Mems microphone semiconductor device and method of manufacturing the same 审中-公开
标题翻译： MEMS麦克风半导体器件及其制造方法
公开(公告)号：JP2010268412A
公开(公告)日：2010-11-25
申请号：JP2009120418
申请日：2009-05-18
申请人： Panasonic Corp , パナソニック株式会社
发明人： IITAKA MASAHIRO , UCHIUMI KATSUKI , FUJII KYOKO
IPC分类号： H04R19/04 , B81B3/00 , B81C3/00 , H04R19/01
CPC分类号： B81C1/00896 , B81B2201/0257 , B81B2207/012 , B81C2201/053 , H01L24/97 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2924/14 , H01L2924/1461 , H04R19/04 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a MEMS microphone semiconductor device in which reliability is improved by suppressing entry of cutting water or cutting dust during processing for dicing, and to provide a method of manufacturing the same. SOLUTION: The MEMS microphone semiconductor device includes: a substrate; one or more semiconductor elements mounted on a first principal surface of the substrate; a case fixed on the first principal surface of the substrate for covering the one or more semiconductor elements; a through-hole which is formed on the substrate or on the case and becomes a sound hole; and a plurality of connecting electrodes formed on a second principal surface, that is opposite to the first principal surface, of the substrate, wherein entry suppression shaping is applied to the through-hole so as to suppress the entry of cutting water during dicing. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种MEMS麦克风半导体器件，其通过在切割加工期间抑制切入水或切割灰尘来提高可靠性，并提供其制造方法。解决方案：MEMS麦克风半导体器件包括：衬底; 安装在所述基板的第一主表面上的一个或多个半导体元件; 固定在用于覆盖所述一个或多个半导体元件的所述基板的所述第一主表面上的壳体; 形成在基板上或壳体上并形成声孔的通孔; 以及形成在基板的与第一主表面相对的第二主表面上的多个连接电极，其中对通孔施加抑制成形以抑制切割期间切割水的进入。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010245292A Optical device, electronic apparatus, and method of manufacturing the same 审中-公开
标题翻译：光学装置，电子装置及其制造方法
公开(公告)号：JP2010245292A
公开(公告)日：2010-10-28
申请号：JP2009092371
申请日：2009-04-06
申请人： Panasonic Corp , パナソニック株式会社
发明人： INOUE DAISUKE , FUJII KYOKO , NAKANO TAKAHIRO , SANO HIKARI
IPC分类号： H01L27/14 , H04N5/335 , H04N5/369
CPC分类号： G02B5/1842 , G02B5/1814 , G02B5/1876 , G02B27/4205 , G02B27/4272 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14685 , H01L2224/11
摘要： PROBLEM TO BE SOLVED: To provide an optical device of high reliability, being excellent in image characteristics. SOLUTION: An optical device 10A includes a semiconductor element 11, a light-receiving part 12 provided on the main surface of the semiconductor element 11, and a translucent plate 15 stacked on the main surface of the semiconductor element 11 through a bonding member 20. On at least either a surface, facing the semiconductor element 11 of the translucent plate 15 or its rear surface, a sawtooth-like rough part 16 is formed which functions as a condenser lens that condenses light on the light-receiving part 12. COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2010114320A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010114320A
公开(公告)日：2010-05-20
申请号：JP2008286893
申请日：2008-11-07
申请人： Panasonic Corp , パナソニック株式会社
发明人： NANO MASANORI , FUJII KYOKO
IPC分类号： H01L21/3205 , H01L23/52 , H01L27/146
CPC分类号： H01L27/14618 , H01L23/3114 , H01L23/481 , H01L27/14683 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/06181 , H01L2224/13021 , H01L2224/13024 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with improved efficiency by suppressing a leakage current between a diffusion layer and a conductor that are opposed and proximal.
SOLUTION: A semiconductor device includes: a semiconductor substrate 1; a through electrode 7 penetrating the semiconductor substrate 1; a diffusion layer 24 that is located at the upper part of the semiconductor substrate 1 and provided in a region located at the side of the through electrode 7; and the diffusion layer 22 provided at the upper part of the diffusion layer 24. A portion opposed to the diffusion layer 24 among the side faces of the through electrode 7 is curved, and the portion opposed to the through electrode 7 among the surfaces of the diffusion layer 24 is curved.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过抑制扩散层和相对和近端的导体之间的漏电流来提供具有提高的效率的半导体器件。解决方案：半导体器件包括：半导体衬底1; 贯通半导体基板1的贯通电极7; 位于半导体衬底1的上部并且设置在位于贯通电极7侧的区域中的扩散层24; 以及设置在扩散层24的上部的扩散层22.与贯通电极7的侧面中的扩散层24相对的部分是弯曲的，并且与贯通电极7相对的部分在扩散层24弯曲。版权所有（C）2010，JPO＆INPIT

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