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1. 发明专利

JP2011078978A Method for promoting self-organization of block copolymer, and method for forming self-organization pattern of block copolymer using the same 有权
标题翻译：用于促进嵌段共聚物的自组装的方法，以及使用其形成嵌段共聚物的自组织图案的方法
公开(公告)号：JP2011078978A
公开(公告)日：2011-04-21
申请号：JP2010289550
申请日：2010-12-27
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： B05D7/24 , B05D1/36 , C08L53/00 , C08L101/00 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To improve the throughput of pattern forming by the self-organization of a block copolymer. SOLUTION: A block copolymer film 303 is formed on a substrate. Successively, a water-soluble polymer film 304 is formed on the block copolymer film 303. Afterwards, the block copolymer film 303 and the water-soluble polymer film 304 are annealed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过嵌段共聚物的自组织来提高图案形成的生产量。解决方案：在基板上形成嵌段共聚物膜303。接着，在嵌段共聚物膜303上形成水溶性聚合物膜304.然后，将嵌段共聚物膜303和水溶性聚合物膜304退火。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011007931A Chemically amplified resist material and pattern forming method using the same 审中-公开
标题翻译：化学稳定材料和形成图案的方法
公开(公告)号：JP2011007931A
公开(公告)日：2011-01-13
申请号：JP2009149765
申请日：2009-06-24
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/039 , C08F220/10 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045
摘要： PROBLEM TO BE SOLVED: To achieve a pattern forming method by which roughness produced on a resist pattern is reduced and a good shape is provided.SOLUTION: A resist film is formed on a substrate 101 from a chemically amplified resist material containing a polymer including an acid-cleavable group and a derivative of maleic acid which has an onium salt comprising an anionic moiety and a cationic moiety and covalently bonds to a sulfonic acid group as the anionic moiety. The resist film 102 is patternwise exposed by selective irradiation with exposure light, the patternwise exposed resist film 102 is heated, and then a resist pattern 102a is formed from the heated resist film 102 by developing the resist film 102.
摘要翻译：要解决的问题：为了实现减少在抗蚀剂图案上产生的粗糙度并提供良好形状的图案形成方法。解决方案：抗蚀剂膜由含有聚合物的化学放大抗蚀剂材料形成在基板101上，酸可裂解基团和马来酸衍生物，其具有包含阴离子部分和阳离子部分的鎓盐，并与磺酸基团共价键合作为阴离子部分。通过用曝光光的选择性照射将抗蚀剂膜102图案化地曝光，加热图案曝光的抗蚀剂膜102，然后通过显影抗蚀剂膜102从加热的抗蚀剂膜102形成抗蚀剂图案102a。

3. 发明专利

JP2010237408A Chemically amplified resist material and method for forming pattern using the same 审中-公开
标题翻译：化学稳定材料及其形成图案的方法
公开(公告)号：JP2010237408A
公开(公告)日：2010-10-21
申请号：JP2009084703
申请日：2009-03-31
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392
摘要： PROBLEM TO BE SOLVED: To prevent pattern defects when extreme ultraviolet rays are used as exposure light.
SOLUTION: First, a resist film 102 is formed from a chemically amplified resist material which contains a first photoacid generator containing fluorine and a polymer having a second photoacid generator containing no fluorine and comprising an onium salt, on a substrate 101. Next, a pattern exposure is carried out by selectively irradiating the resist film 102 with extreme ultraviolet rays as exposure light, and then the resist film 102 having been subjected to the pattern exposure is heated. After that, the heated resist film 102 is developed, so that a resist pattern 102 is formed from the resist film 102.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止使用极紫外线时的图案缺陷作为曝光光。解决方案：首先，抗蚀剂膜102由化学放大抗蚀剂材料形成，该抗蚀剂材料含有含氟的第一光致酸产生剂和含有不含氟并含有鎓盐的第二光致酸产生剂的聚合物，在基材101上。下一步通过以极紫外线选择性地照射抗蚀剂膜102作为曝光来进行图案曝光，然后加热经受图案曝光的抗蚀剂膜102。之后，加热的抗蚀剂膜102被显影，使得抗蚀剂图案102由抗蚀剂膜102形成。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010145480A Resist material and patter-forming method using the same 有权
标题翻译：使用它的耐材料和图案形成方法
公开(公告)号：JP2010145480A
公开(公告)日：2010-07-01
申请号：JP2008319623
申请日：2008-12-16
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/039 , C07C39/12 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045
摘要： PROBLEM TO BE SOLVED: To prevent occurrence of defective patterns in resist patterns using a molecular resist material.
SOLUTION: First, on a substrate, a resist film 102 is formed from a resist material which contains a cyclic oligomer of at least trimer which contains no acid-unstable group and is alkali-soluble, a molecular compound containing an acid-unstable group and a photoacid generator, and does not contain a polymer. Then, the resist film 102 thus formed is selectively irradiated with exposure light consisting of extreme ultraviolet rays to perform pattern exposure. Then, the resist film 102 which is subjected to pattern exposure is heated, and then the heated resist film 102 is developed to form a resist pattern 102a from the resist film 102.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止使用分子抗蚀剂材料发生抗蚀剂图案中的缺陷图案。解决方案：首先，在基板上，由含有至少三聚体的不含酸不稳定基团且为碱溶性的三聚体的环状低聚物的抗蚀剂材料形成抗蚀剂膜102，不稳定组和光致酸发生剂，不含聚合物。然后，由如此形成的抗蚀剂膜102选择性地用由极紫外线组成的曝光灯照射以进行图案曝光。然后，对受到图案曝光的抗蚀剂膜102进行加热，然后将加热的抗蚀剂膜102显影，从抗蚀膜102形成抗蚀剂图案102a。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010085921A Resist material and pattern forming method using the same 审中-公开
标题翻译：使用该材料的抗蚀材料和图案形成方法
公开(公告)号：JP2010085921A
公开(公告)日：2010-04-15
申请号：JP2008257626
申请日：2008-10-02
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/004 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/11
摘要： PROBLEM TO BE SOLVED: To prevent pattern defects by improving the resolution of a resist material to be used for lithography when no barrier film is prepared on a resist film.
SOLUTION: The resist film 102 is formed on a substrate 101, the film being formed from a resist material containing a perfluoroethyl acrylate that is a monomer containing a halogen atom (fluorine) and stable against an acid, a polyperfluoroethyl acrylate that is a polymer containing fluorine and stable against an acid, a polymer containing an acid-labile group, and a photo-acid generator. The resist film 102 is subjected to pattern exposure by selectively irradiating the resist film 102 with exposure light while a liquid 103 is disposed on the resist film 101. Subsequently, the resist film 102 subjected to the pattern exposure is developed to form a resist pattern 102b from the resist film 102.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在抗蚀剂膜上没有制备阻挡膜时，通过提高用于光刻的抗蚀剂材料的分辨率来防止图案缺陷。抗蚀剂膜102形成在基板101上，该膜由抗蚀剂材料形成，该抗蚀剂材料包含作为含有卤素原子（氟）并且对酸稳定的单体的丙烯酸全氟乙酯，丙烯酸聚全氟乙酯是含氟并且对酸稳定的聚合物，含有酸不稳定基团的聚合物和光酸发生剂。通过在抗蚀剂膜101上设置液体103的同时用曝光光选择性地照射抗蚀剂膜102来对抗蚀剂膜102进行图案曝光。接着，对经过图案曝光的抗蚀剂膜102进行显影以形成抗蚀剂图案102b 来自抗蚀剂膜102.版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009283565A Pattern forming method 审中-公开
标题翻译：图案形成方法
公开(公告)号：JP2009283565A
公开(公告)日：2009-12-03
申请号：JP2008132173
申请日：2008-05-20
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： H01L21/027 , G03F7/11 , G03F7/20 , G03F7/38
CPC分类号： G03F7/2041
摘要： PROBLEM TO BE SOLVED: To prevent failure of a resist pattern in using a barrier film containing nano-particles consisting of an inorganic oxide for liquid immersion lithography.
SOLUTION: A resist film 102 is formed on a substrate 101, and then the resist film 102 is selectively irradiated with an exposure light while a liquid 104 containing nano-particles (HfO
2 ) made of an inorganic oxide and an alycyclic compound (1,3-adamandinol) having an alkali-soluble group is disposed on the formed resist film 102, thereby executing pattern exposure. Subsequently, the resist film 102 subjected to pattern exposure is developed to form a resist pattern 102a from the resist film 102.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止使用含有由用于液浸光刻的无机氧化物组成的纳米颗粒的阻挡膜的抗蚀剂图案的失效。解决方案：在基板101上形成抗蚀剂膜102，然后用曝光灯选择性地照射抗蚀剂膜102，同时将含有纳米颗粒（HfO 2 ）的液体104 在形成的抗蚀剂膜102上设置具有碱溶性基团的无机氧化物和亚环状化合物（1,3-亚胺丁醇），从而进行图案曝光。随后，经受图案曝光的抗蚀剂膜102被显影以从抗蚀剂膜102形成抗蚀剂图案102a。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009175762A Resist material and pattern forming method 审中-公开
标题翻译：耐材料和图案形成方法
公开(公告)号：JP2009175762A
公开(公告)日：2009-08-06
申请号：JP2009114452
申请日：2009-05-11
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/039 , C08G61/06 , G03F7/004 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent a resist film from softening by a liquid used for liquid immersion lithography and to obtain a finer pattern having a good shape.
SOLUTION: A resist material includes a first polymer 20A in which part of the alkali-soluble groups are protected by acid-labile groups which become labile by an acid, a second polymer 20B in which almost all of the alkali-soluble groups are protected by acid-labile groups which become labile by an acid, and an acid generator.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了防止抗蚀剂膜被用于液浸光刻的液体软化，并获得具有良好形状的更精细的图案。抗蚀剂材料包括第一聚合物20A，其中碱溶性基团的一部分被酸变得不稳定的酸不稳定基团保护，第二聚合物20B几乎全部是碱溶性基团被酸变得不稳定的酸不稳定组和酸生成剂保护。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2011043839A Resist material and pattern forming method using the same 审中-公开
标题翻译：使用该材料的抗蚀材料和图案形成方法
公开(公告)号：JP2011043839A
公开(公告)日：2011-03-03
申请号：JP2010218368
申请日：2010-09-29
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent shape defects of a pattern by improving the adhesiveness of a resist pattern with a film to be treated.
SOLUTION: A resist film 302 formed from a resist containing a butane-1,4-sultam being a heterocyclic sulfone is formed on a substrate 301, and then the resist film 302 is subjected to pattern exposure by selectively irradiating the resist film 302 with exposure light 303. Subsequently, the resist film subjected to the pattern exposure is developed to form a resist pattern 302a.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过改善抗蚀剂图案与被处理膜的粘合性来防止图案的形状缺陷。解决方案：在基片301上形成由含有杂环砜的丁烷-1,4-苏丹的抗蚀剂形成的抗蚀剂膜302，然后通过选择性地照射抗蚀剂膜对抗蚀剂膜302进行图案曝光 302，随后，曝光图案的抗蚀剂膜显影形成抗蚀剂图案302a。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011017902A Chemically amplified resist material and pattern formation method using the same 审中-公开
标题翻译：使用相同的化学放大电阻材料和图案形成方法
公开(公告)号：JP2011017902A
公开(公告)日：2011-01-27
申请号：JP2009162525
申请日：2009-07-09
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/039 , C08F297/00 , G03F7/004 , H01L21/027
CPC分类号： C09D153/00 , G03F7/0045 , G03F7/0392
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method that reduces roughness produced on a resist pattern to make the pattern have a good shape.SOLUTION: At first, a resist film 102 is formed from a chemically amplified resist material onto a substrate 101. The resist film 102 is irradiated with an exposure light comprising extreme ultraviolet light in a selective manner to achieve pattern exposure. The resist film 102 that has been subjected to pattern exposure is heated, and the heated resist film 102 is developed to form a resist pattern 102a from the resist film 102. The chemically amplified resist material comprises a block polymer comprising a first monomer unit and a second monomer unit, wherein the first monomer unit has an onium salt having an anionic moiety and a cationic moiety and contains a group covalently bound to a sulfonate group that is the anionic moiety, and wherein the second monomer unit contains an acid leaving group.
摘要翻译：要解决的问题：提供减少抗蚀剂图案上产生的粗糙度以使图案具有良好形状的图案形成方法。解决方案：首先，将抗蚀剂膜102由化学放大的抗蚀剂材料形成在基板101上。以选择性的方式对包含极紫外光的曝光光照射抗蚀剂膜102以实现图案曝光。对已经进行图案曝光的抗蚀剂膜102进行加热，并且将加热的抗蚀剂膜102显影，从抗蚀剂膜102形成抗蚀剂图案102a。化学放大抗蚀剂材料包含嵌段聚合物，该嵌段聚合物包括第一单体单元和第二单体单元，其中所述第一单体单元具有具有阴离子部分和阳离子部分的鎓盐，并且含有共价结合到作为所述阴离子部分的磺酸盐基团的基团，并且其中所述第二单体单元含有酸离去基团。

10. 发明专利

JP2010156985A Material for forming barrier film and pattern forming method using same 审中-公开
标题翻译：用于形成障碍膜的材料和使用其形成图案的方法
公开(公告)号：JP2010156985A
公开(公告)日：2010-07-15
申请号：JP2010021897
申请日：2010-02-03
申请人： Panasonic Corp , パナソニック株式会社
发明人： ENDO MASATAKA , SASAKO MASARU
IPC分类号： G03F7/11 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a fine pattern with a favorable profile by improving dissolution contrast by immersion lithography.
SOLUTION: A resist film 202 is formed on a substrate 201. Then a barrier film 203 containing halogenated adamantane is formed on the resist film 202. Then, the resist film 202 is selectively irradiated with exposure light 205 for pattern exposure through the barrier film 203 while a liquid 204 is laid on the formed barrier film 203. After pattern exposure, the barrier film 202 is removed, and the resist film 202 after pattern exposure is developed to form a resist pattern 202a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过浸没式光刻提高溶出度对比度来提供具有良好轮廓的精细图案。解决方案：在基板201上形成抗蚀剂膜202.然后在抗蚀剂膜202上形成含有卤化金刚烷的阻挡膜203.然后，用曝光光205选择性地照射抗蚀剂膜202以进行图案曝光阻挡膜203，同时将液体204放置在形成的阻挡膜203上。在图案曝光之后，去除阻挡膜202，并且显影图案曝光后的抗蚀剂膜202以形成抗蚀剂图案202a。版权所有（C）2010，JPO＆INPIT

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