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    • 1. 发明申请
    • ORGANIC ELECTRODES AND ELECTRONIC DEVICES
    • 有机电极和电子器件
    • WO2008144759A3
    • 2009-03-19
    • PCT/US2008064426
    • 2008-05-21
    • PLEXTRONICS INCBERNKOPF JANMATHAI MATHEW KLAIRD DARIN WBROWN CHRISTOPHER T
    • BERNKOPF JANMATHAI MATHEW KLAIRD DARIN WBROWN CHRISTOPHER T
    • H01L51/10
    • H01L51/0541H01L51/0021H01L51/0035H01L51/0036H01L51/0043H01L51/0545H01L51/055H01L51/105
    • A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one gate disposed on the gate insulator second side; wherein the gate does not substantially overlap with the source or the drain so as to minimize parasitic capacitance, the device further comprising a substrate to support the transistor. The transistor can be adapted for a bottom-gate configuration or a top-gate configuration. The transistor can be a field effect transistor, an organic field effect transistor, or a thin- film transistor. A polymer substrate can be used. Applications include printed electronics.
    • 一种装置,包括:晶体管,包括:至少一个源; 至少一个排水管; 至少一个通道; 至少一个栅极绝缘体包括(i)限定第一侧的第一表面和(ii)限定第二侧并与第一表面和第一侧相对的第二表面,其中源极和漏极首先设置在栅极绝缘体上 侧; 设置在所述栅极绝缘体第二侧上的至少一个栅极; 其中所述栅极基本上不与所述源极或漏极重叠,以便使寄生电容最小化,所述器件还包括用于支撑所述晶体管的衬底。 晶体管可以适用于底栅配置或顶栅配置。 晶体管可以是场效应晶体管,有机场效应晶体管或薄膜晶体管。 可以使用聚合物基材。 应用包括印刷电子产品。