专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009144371A1 METHODS AND APPARATUS FOR DEPOSITION REACTORS 审中-公开
标题翻译：沉积反应器的方法和装置
公开(公告)号：WO2009144371A1
公开(公告)日：2009-12-03
申请号：PCT/FI2009/050432
申请日：2009-05-25
申请人： PICOSUN OY , LINDFORS, Sven
发明人： LINDFORS, Sven
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , C30B25/00
CPC分类号： C23C16/403 , C23C16/45504 , C23C16/45546 , C30B25/165 , C30B29/20
摘要： The invention relates to a method and an apparatus in which precursor vapor (101) is guided along at least one in-feed line (141,142) into a reaction chamber (110) of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates (170) by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates (170).
摘要翻译：本发明涉及一种方法和装置，其中将前体蒸汽（101）沿着至少一个进料管线（141,142）引导到沉积反应器的反应室（110）中，并且将材料沉积在批料的表面上通过在反应室中建立垂直的前体蒸气流并使其在垂直方向上进入所述垂直放置的基板之间的垂直放置的基板（170）。

2. 发明申请

WO2012136876A1 ATOMIC LAYER DEPOSITION WITH PLASMA SOURCE 审中-公开
标题翻译：原子层沉积与等离子体源
公开(公告)号：WO2012136876A1
公开(公告)日：2012-10-11
申请号：PCT/FI2011/050303
申请日：2011-04-07
申请人： PICOSUN OY , KILPI, Väino , LI, Wei-Min , MALINEN, Timo , KOSTAMO, Juhana , LINDFORS, Sven
发明人： KILPI, Väino , LI, Wei-Min , MALINEN, Timo , KOSTAMO, Juhana , LINDFORS, Sven
IPC分类号： C23C16/455
CPC分类号： B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
摘要： The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber (335) on at least one substrate (360) by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及包括操作等离子体原子层沉积反应器的方法，所述等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底（360）上的反应室（335）中沉积材料，并且允许来自惰性气体源的气体流动进入基本上在整个沉积循环期间向反应室开口的加宽的自由基进料部分。本发明还涉及相应的装置。

3. 发明申请

WO2013186426A1 COATING A SUBSTRATE WEB BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积涂覆基板
公开(公告)号：WO2013186426A1
公开(公告)日：2013-12-19
申请号：PCT/FI2012/050615
申请日：2012-06-15
申请人： PICOSUN OY , LINDFORS, Sven
发明人： LINDFORS, Sven
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/403 , C23C16/54 , C23C16/545
摘要： The present invention relates to a method of driving a substrate web (950) into a reaction space of an atomic layer deposition (ALD) reactor and apparatuses therefore. The invention includes driving a substrate web into a reaction space (930) of an atomic layer deposition reactor, and exposing the reaction space to precursor pulses to deposit material on said substrate web by sequential self-saturating surface reactions. One effect of the invention is a simpler structure compared to earlier spatial roll-to-roll ALD reactors. Another effect is that the thickness of deposited material is directly determined by the speed of the web.
摘要翻译：本发明涉及一种将衬底腹板（950）驱动到原子层沉积（ALD）反应器的反应空间中的方法及装置。本发明包括将基材网驱动到原子层沉积反应器的反应空间（930）中，并将反应空间暴露于前驱物脉冲，以通过顺序的自饱和表面反应将材料沉积在所述基材网上。与早期空间卷对卷ALD反应器相比，本发明的一个效果是更简单的结构。另一个效果是沉积材料的厚度直接由网的速度确定。

4. 发明申请

WO2013171360A1 POWDER PARTICLE COATING USING ATOMIC LAYER DEPOSITION CARTRIDGE 审中-公开
标题翻译：使用原子层沉积盒的粉末颗粒涂料
公开(公告)号：WO2013171360A1
公开(公告)日：2013-11-21
申请号：PCT/FI2012/050462
申请日：2012-05-14
申请人： PICOSUN OY , LINDFORS, Sven , SOININEN, Pekka J.
发明人： LINDFORS, Sven , SOININEN, Pekka J.
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/4417 , C23C16/442 , C23C16/45502 , C23C16/45555
摘要： It is desirable to coat small particles with thin coatings to alter the surface properties of these particles, while maintaining their bulk properties. The ALD technique is an interesting application for this purpose. The invention provides a method that includes receiving an atomic layer deposition (ALD) cartridge (110) into a receiver of an ALD reactor (121) by a quick coupling method. Due to this feature, it can be attained that conduits inside the reactor and cartridge are in alignment with each other. Said ALD cartridge is configured to serve as an ALD reaction chamber, and the method comprises processing surfaces of particulate material within said ALD cartridge by sequential self-saturating surface reactions. The invention also pertains to an ALD reactor, an ALD cartridge and to an apparatus, which contains the reactor and the cartridge.
摘要翻译：需要用薄涂层涂覆小颗粒以改变这些颗粒的表面性质，同时保持它们的体积性质。 ALD技术是一个有趣的应用程序。本发明提供了一种方法，其包括通过快速耦合方法将原子层沉积（ALD）盒（110）接收到ALD反应器（121）的接收器中。由于该特征，可以实现反应器和料筒内的管道彼此对准。所述ALD筒被配置为用作ALD反应室，并且该方法包括通过顺序的自饱和表面反应处理所述ALD筒内的颗粒材料的表面。本发明还涉及ALD反应器，ALD药筒和包含反应器和药筒的装置。

5. 发明申请

WO2010012863A1 ATOMIC LAYER DEPOSITION APPARATUS AND LOADING METHODS 审中-公开
标题翻译：原子层沉积装置和装载方法
公开(公告)号：WO2010012863A1
公开(公告)日：2010-02-04
申请号：PCT/FI2009/050616
申请日：2009-07-07
申请人： PICOSUN OY , LINDFORS, Sven , POUTIAINEN, Juha Allan Kustaa-Adolf
发明人： LINDFORS, Sven , POUTIAINEN, Juha Allan Kustaa-Adolf
IPC分类号： C23C16/455 , C23C16/458 , C23C16/54 , C30B25/02 , H01L21/28 , H01L21/314
CPC分类号： C23C16/45546 , C23C16/4401 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67742 , H01L21/67757
摘要： The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf,and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.
摘要翻译：本发明涉及其中多个ALD反应器相对于彼此以图案放置的方法和设备，每个ALD反应器被配置为接收一批用于ALD处理的基底，并且每个ALD反应器包括可从顶端。使用装载机器人执行多个加载顺序。每个加载顺序包括拾取在存储区域或搁板中承载一批基板的基板保持器，以及将所述基板保持器与所述一批基板移动到所讨论的ALD反应器的反应室中。

6. 发明申请

WO2013186427A1 COATING A SUBSTRATE WEB BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积涂覆基板
公开(公告)号：WO2013186427A1
公开(公告)日：2013-12-19
申请号：PCT/FI2012/050616
申请日：2012-06-15
申请人： PICOSUN OY , LINDFORS, Sven
发明人： LINDFORS, Sven
IPC分类号： C23C16/455
CPC分类号： C30B25/025 , C23C16/45544 , C23C16/45578 , C23C16/545 , C30B25/12 , C30B25/14 , H01L31/1884 , Y02E10/50
摘要： The present invention relates to a method of receiving and treating a moving substrate web (1 10) in a reaction space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a production line that includes such a reactor. The invention comprises receiving a moving substrate web into a reaction space (150) of an atomic layer deposition reactor, providing a track for the substrate web with a repeating pattern (140) in the reaction space and exposing the reaction space to precursor pulses to deposit material on the substrate web by sequential self-saturating surface reactions. The pattern is performed by turning the direction of propagation of the substrate web a plurality of times in the reaction space. One effect of the invention is adjusting an ALD reactor to a required production line substrate web speed.
摘要翻译：本发明涉及一种在原子层沉积（ALD）反应器（100）的反应空间中接收和处理移动的衬底腹板（110）的方法及装置。它也涉及包括这种反应器的生产线。本发明包括将移动的衬底腹板接收到原子层沉积反应器的反应空间（150）中，为反应空间中的重复图案（140）提供用于衬底腹板的轨道，并将反应空间暴露于前体脉冲以沉积通过顺序自饱和表面反应在基材网上的材料。通过在反应空间中转动基板幅材的传播方向多次来进行图案。本发明的一个效果是将ALD反应器调整到所需的生产线基材幅材速度。

7. 发明申请

WO2013140021A1 ATOMIC LAYER DEPOSITION METHOD AND APPARATUSES 审中-公开
标题翻译：原子层沉积法和装置
公开(公告)号：WO2013140021A1
公开(公告)日：2013-09-26
申请号：PCT/FI2012/050296
申请日：2012-03-23
申请人： PICOSUN OY , LINDFORS, Sven
发明人： LINDFORS, Sven
IPC分类号： C23C16/455
CPC分类号： C23C16/45527 , C23C16/45544 , C23C16/46
摘要： In accordance with an example embodiment of the present invention, there is provided a method that includes operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions, and using dry air in the reactor as purge gas.
摘要翻译：根据本发明的示例性实施例，提供了一种方法，其包括操作原子层沉积反应器，其被配置为通过顺序的自饱和表面反应将材料沉积在至少一个基板上，并且使用反应器中的干燥空气作为吹扫加油站。

8. 发明申请

WO2013076347A1 AN ATOMIC LAYER DEPOSITION REACTOR FOR PROCESSING A BATCH OF SUBSTRATES AND METHOD THEREOF 审中-公开
标题翻译：用于处理基板批次的原子层沉积反应器及其方法
公开(公告)号：WO2013076347A1
公开(公告)日：2013-05-30
申请号：PCT/FI2011/051017
申请日：2011-11-22
申请人： PICOSUN OY , LINDFORS, Sven , SOININEN, Pekka J.
发明人： LINDFORS, Sven , SOININEN, Pekka J.
IPC分类号： C23C16/455 , H01L31/18
CPC分类号： C23C30/00 , C23C16/45546 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process, and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及一种方法，其包括提供原子层沉积反应器的反应室模块，用于通过原子层沉积工艺处理一批衬底，并通过不同的途径在处理之前将批次的衬底加载到反应室模块中该批次的基材在加工后卸载。本发明还涉及相应的装置。

9. 发明申请

WO2012136875A1 DEPOSITION REACTOR WITH PLASMA SOURCE 审中-公开
标题翻译：具有等离子体源的沉积反应器
公开(公告)号：WO2012136875A1
公开(公告)日：2012-10-11
申请号：PCT/FI2011/050302
申请日：2011-04-07
申请人： PICOSUN OY , KILPI, Väinö , LI, Wei-Min , MALINEN, Timo , KOSTAMO, Juhana , LINDFORS, Sven
发明人： KILPI, Väinö , LI, Wei-Min , MALINEN, Timo , KOSTAMO, Juhana , LINDFORS, Sven
IPC分类号： C23C16/455
CPC分类号： C23C16/458 , C23C16/403 , C23C16/45536 , C23C16/45544 , C23C16/45582 , C23C16/45589 , C23C16/50
摘要： The invention relates to a deposition reactor including an in-feed part that defines an expansion space which is configured to lead reactants as a top to bottom flow from a plasma source (110) towards a reaction chamber, the expansion space widening towards the reaction chamber (335), and a lifting mechanism for loading at least one substrate (360) to the reaction chamber from the top side of the reaction chamber. The deposition reactor is configured to deposit material on said at least one substrate in the reaction chamber by sequential self-saturating surface reactions.
摘要翻译：本发明涉及一种沉积反应器，该沉积反应器包括限定膨胀空间的进料部分，所述膨胀空间被配置为引导反应物从顶部到底部从等离子体源（110）流向反应室，朝向反应室（335）变宽的膨胀空间以及用于从反应室的顶侧将至少一个衬底（360）装载到反应室的提升机构。沉积反应器被配置为通过顺序的自饱和表面反应将材料沉积在反应室中的所述至少一个基底上。

10. 发明申请

WO2009130375A1 APPARATUS AND METHODS FOR DEPOSITION REACTORS 审中-公开
标题翻译：沉积反应器的装置和方法
公开(公告)号：WO2009130375A1
公开(公告)日：2009-10-29
申请号：PCT/FI2009/050280
申请日：2009-04-15
申请人： PICOSUN OY , LINDFORS, Sven , SOININEN, Pekka J.
发明人： LINDFORS, Sven , SOININEN, Pekka J.
IPC分类号： C23C16/455 , C30B25/08 , C30B25/10 , C30B25/14 , C30B25/16
CPC分类号： F16L53/00 , C23C16/4485 , C23C16/45544 , C23C16/45553 , C23C16/45561 , Y10T137/6416
摘要： An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Pulsing valves, a precursor source, precursor cartridges and methods are also presented.
摘要翻译：一种诸如ALD（原子层沉积）装置的装置，包括被配置用于通过连续的自饱和表面反应在沉积反应器中在加热的衬底上沉积材料的前体源。该装置包括用于将前体蒸气从前体源供给到反应室的进料管线和被配置为利用来自反应室加热器的热量以防止前体蒸气冷凝到前体源和反应器之间的液体或固相的结构室。还提出了脉冲阀，前体源，前驱物盒和方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式