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1. 发明申请

WO2012136875A8 DEPOSITION REACTOR WITH PLASMA SOURCE 审中-公开
标题翻译：具有等离子体源的沉积反应器
公开(公告)号：WO2012136875A8
公开(公告)日：2012-12-06
申请号：PCT/FI2011050302
申请日：2011-04-07
申请人： PICOSUN OY , KILPI VAEINOE , LI WEI-MIN , MALINEN TIMO , KOSTAMO JUHANA , LINDFORS SVEN
发明人： KILPI VAEINOE , LI WEI-MIN , MALINEN TIMO , KOSTAMO JUHANA , LINDFORS SVEN
IPC分类号： C23C16/455
CPC分类号： C23C16/458 , C23C16/403 , C23C16/45536 , C23C16/45544 , C23C16/45582 , C23C16/45589 , C23C16/50
摘要： The invention relates to a deposition reactor including an in-feed part that defines an expansion space which is configured to lead reactants as a top to bottom flow from a plasma source (110) towards a reaction chamber, the expansion space widening towards the reaction chamber (335), and a lifting mechanism for loading at least one substrate (360) to the reaction chamber from the top side of the reaction chamber. The deposition reactor is configured to deposit material on said at least one substrate in the reaction chamber by sequential self-saturating surface reactions.
摘要翻译：本发明涉及一种沉积反应器，其包括限定膨胀空间的进料部分，该膨胀空间被配置为引导反应物从顶部到底部从等离子体源（110）流向反应室，膨胀空间朝向反应室（335），以及用于从反应室的顶侧将至少一个基板（360）装载到反应室的提升机构。沉积反应器被配置为通过顺序的自饱和表面反应将材料沉积在反应室中的所述至少一个基板上。

2. 发明申请

WO2012136876A8 ATOMIC LAYER DEPOSITION WITH PLASMA SOURCE 审中-公开
标题翻译：具有等离子体源的原子层沉积
公开(公告)号：WO2012136876A8
公开(公告)日：2012-12-06
申请号：PCT/FI2011050303
申请日：2011-04-07
申请人： PICOSUN OY , KILPI VAEINOE , LI WEI-MIN , MALINEN TIMO , KOSTAMO JUHANA , LINDFORS SVEN
发明人： KILPI VAEINOE , LI WEI-MIN , MALINEN TIMO , KOSTAMO JUHANA , LINDFORS SVEN
IPC分类号： C23C16/455
CPC分类号： B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
摘要： The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber (335) on at least one substrate (360) by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序自饱和表面反应将材料沉积在至少一个基板（360）上的反应室（335）中，并且允许来自惰性气体源的气体流动基本上在整个沉积循环期间进入朝向反应室敞开的扩大的自由基进给部分。本发明还涉及相应的装置。

3. 发明专利

JP2013189713A Apparatus and method for deposition reactor 有权
标题翻译：沉积反应器的装置和方法
公开(公告)号：JP2013189713A
公开(公告)日：2013-09-26
申请号：JP2013088079
申请日：2013-04-19
申请人： Picosun Oy , ピコサンオーワイPicosun Oy
发明人： LINDFORS SVEN , SOININEN PEKKA J
IPC分类号： C23C16/448 , H01L21/31 , H01L21/365
CPC分类号： F16L53/00 , C23C16/4485 , C23C16/45544 , C23C16/45553 , C23C16/45561 , Y10T137/6416
摘要： PROBLEM TO BE SOLVED: To provide a precursor source with a simple structure, in an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor used for atomic layer epitaxy method by sequential self-saturating surface reactions.SOLUTION: An apparatus includes an in-feed line 316 for feeding precursor vapor from a precursor source 300 to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source 300 and the reaction chamber. A plurality of pulsing valves 306, 310, the precursor source 300, a plurality of precursor cartridges 344 and a plurality of methods are also presented.
摘要翻译：要解决的问题：为了提供具有简单结构的前体源，在ALD（原子层沉积）装置中，包括被构造用于在用于原子层外延法的沉积反应器中的加热衬底上沉积材料的前体源 - 充分的表面反应。解决方案：一种装置包括用于将前体蒸气从前体源300供给到反应室的进料管线316和被配置为利用来自反应室加热器的热量以防止前体蒸气冷凝成液体的结构前体源300和反应室之间的固相。还提供了多个脉冲阀306,310，前体源300，多个前体盒344和多种方法。

4. 发明申请

WO9617969A3 METHOD AND EQUIPMENT FOR GROWING THIN FILMS METHOD AND EQUIPMENT FOR GROWING THIN FILMS 审中-公开
标题翻译：用于生长薄膜的方法和设备和用于生长薄膜的设备
公开(公告)号：WO9617969A3
公开(公告)日：1996-08-29
申请号：PCT/FI9500659
申请日：1995-11-28
申请人： MIKROKEMIA OY , SUNTOLA TUOMO , LINDFORS SVEN , SOININEN PEKKA
发明人： SUNTOLA TUOMO , LINDFORS SVEN , SOININEN PEKKA
IPC分类号： C30B25/02 , C23C8/06 , C23C10/06 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/52 , C30B25/14 , C30B35/00 , C23C
CPC分类号： C23C16/45546 , C23C8/06 , C23C10/06 , C23C16/45502 , C30B25/14
摘要： The invention relates to a method and equipment for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (1) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. The reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (1), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. The gaseous reaction products and possible excess reactants are removed in gas phase from the reaction space. According to the invention, the gas flow in the reaction space is restricted on the gas flow path after the substrates, whereby the conductance of the gas flow in the reaction space is arranged to be greater cross-directionally to the gas flow at the substrates than after the substrates. The equipment suited to implement the invention comprises vertically or horizontally stacked planar elements (10) of which at least a number are mutually identical and into which are machined reaction chambers (13) and recesses/openings (7, 4) forming gas inflow and outflow channels.

5. 发明专利

IN11244DEN2014A COATING A SUBSTRATE WEB BY ATOMIC LAYER DEPOSITION 未知
公开(公告)号：IN11244DEN2014A
公开(公告)日：2015-10-09
申请号：IN11244DEN2014
申请日：2014-12-31
申请人： PICOSUN OY
发明人： LINDFORS SVEN
IPC分类号： C23C16/455
摘要： The present invention relates to a method of receiving and treating a moving substrate web (1 10) in a reaction space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a production line that includes such a reactor. The invention comprises receiving a moving substrate web into a reaction space (150) of an atomic layer deposition reactor providing a track for the substrate web with a repeating pattern (140) in the reaction space and exposing the reaction space to precursor pulses to deposit material on the substrate web by sequential self saturating surface reactions. The pattern is performed by turning the direction of propagation of the substrate web a plurality of times in the reaction space. One effect of the invention is adjusting an ALD reactor to a required production line substrate web speed.

6. 发明专利

SG11201407817RA COATING A SUBSTRATE WEB BY ATOMIC LAYER DEPOSITION 未知
公开(公告)号：SG11201407817RA
公开(公告)日：2015-01-29
申请号：SG11201407817R
申请日：2012-06-15
申请人： PICOSUN OY
发明人： LINDFORS SVEN
IPC分类号： C23C16/455
摘要： The present invention relates to a method of receiving and treating a moving substrate web (110) in a reaction space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a production line that includes such a reactor. The invention comprises receiving a moving substrate web into a reaction space (150) of an atomic layer deposition reactor, providing a track for the substrate web with a repeating pattern (140) in the reaction space and exposing the reaction space to precursor pulses to deposit material on the substrate web by sequential self-saturating surface reactions. The pattern is performed by turning the direction of propagation of the substrate web a plurality of times in the reaction space. One effect of the invention is adjusting an ALD reactor to a required production line substrate web speed.

7. 发明专利

FI121812B 未知
公开(公告)号：FI121812B
公开(公告)日：2011-04-29
申请号：FI20065049
申请日：2006-01-25
申请人： PICOSUN OY
发明人： LINDFORS SVEN , POUTIAINEN JUHA ALLAN KUSTAA-ADOLF
IPC分类号： C23C16/455 , C30B25/02 , C30B25/12
摘要： An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.

8. 发明专利

FI20065049A 未知
公开(公告)号：FI20065049A
公开(公告)日：2006-09-05
申请号：FI20065049
申请日：2006-01-25
申请人： PICOSUN OY
发明人： LINDFORS SVEN , POUTIAINEN JUHA
IPC分类号： C23C16/455 , C23C16/00
摘要： An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.

9. 发明专利

RU2630727C2 Устройство и способы для реакторов осаждения 未知
公开(公告)号：RU2630727C2
公开(公告)日：2017-09-12
申请号：RU2013120817
申请日：2009-04-15
申请人： PICOSUN OY
发明人： LINDFORS SVEN , SOININEN PEKKA J
IPC分类号： C23C16/54 , C23C16/455
摘要： Изобретениеотноситсяк источникуисходногопродуктадляреакторахимическогоосажденияматериалапоследовательнымисамонасыщающимисяповерхностнымиреакциямии ккартриджуисходногопродуктадляисточникаисходногопродукта. Упомянутыйисточниксодержитприсоединяемыйкартриджисходногопродукта, выполненныйс возможностьюотсоединения, первуюсоединительнуючасть, выполненнуюс возможностьюприсоединениякартриджаисходногопродуктак источникуисходногопродуктаи отсоединенияотнего, ивторуюсоединительнуючастьдляприсоединенияисточникаисходногопродуктак устройствуреактораосажденияи отсоединенияотнего. Картриджисходногопродуктадлявышеуказанногоисточникаисходногопродукта, присоединяемыйс возможностьюотсоединения, содержиткамеруисходногопродукта, резервуарисходногопродуктадлявмещенияисходногопродукта, соединительнуючастьдлязагрузкии разгрузкирезервуараисходногопродуктаи клапандляизоляциигазовогопространствауказаннойкамерыотвыходноготрубопроводаисточникаисходногопродукта. Указаннаякамераимеетсоединительнуючастьс горловиной, обеспечивающуюразборкукартриджаисходногопродуктадляочистки. Резервуарисходногопродуктаимеетфильтр, расположенныйсверхууказанногорезервуара, предотвращающийвыходизрезервуаратвердогоисходногопродуктаилипорошковыхчастиц. Обеспечиваетсяпредотвращениеконденсациипараисходногопродуктав упомянутомисточнике, предотвращениеформированияпленкинатвердойповерхностиисходногопродукта. 2 н. и 9 з.п. ф-лы, 22 ил., 3 пр.

10. 发明专利

SG11201405417YA ATOMIC LAYER DEPOSITION METHOD AND APPARATUSES 未知
公开(公告)号：SG11201405417YA
公开(公告)日：2014-10-30
申请号：SG11201405417Y
申请日：2012-03-23
申请人： PICOSUN OY
发明人： LINDFORS SVEN
IPC分类号： C23C16/455

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