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1. 发明申请

WO2008139400A2 RELIABLE LIGHTING SYSTEM 审中-公开
标题翻译：可靠的照明系统
公开(公告)号：WO2008139400A2
公开(公告)日：2008-11-20
申请号：PCT/IB2008/051845
申请日：2008-05-09
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N. V. , WENDT, Matthias , LETAVIC, Theodore James
发明人： WENDT, Matthias , LETAVIC, Theodore James
IPC分类号： H05B33/08
CPC分类号： H05B33/0887
摘要： A lighting system (1) and its applications are described that are suitable especially in the realm of lighting systems (1) with high power light emitting diodes (LEDs). The lighting system (1) comprises a control circuit (3) with a memory device (4) and a refresh circuit (10), and the refresh circuit (10) is adapted to prevent data loss of the memory device (4) due to the reduction of the retention time of the memory device (4) caused by the high operation temperature of the LEDs.
摘要翻译：描述了特别适用于具有大功率发光二极管（LED）的照明系统（1）领域的照明系统（1）及其应用。照明系统（1）包括具有存储装置（4）和刷新电路（10）的控制电路（3），并且刷新电路（10）适于防止存储装置（4）的数据丢失减少由LED的高操作温度引起的存储器件（4）的保留时间。

2. 发明公开

EP2151146A2 RELIABLE LIGHTING SYSTEM 有权
标题翻译：可靠的照明系统
公开(公告)号：EP2151146A2
公开(公告)日：2010-02-10
申请号：EP08751193.7
申请日：2008-05-09
申请人： Philips Intellectual Property & Standards GmbH , Koninklijke Philips Electronics N.V.
发明人： WENDT, Matthias , LETAVIC, Theodore James
IPC分类号： H05B33/08
CPC分类号： H05B33/0887
摘要： A lighting system (1) and its applications are described that are suitable especially in the realm of lighting systems (1) with high power light emitting diodes (LEDs). The lighting system (1) comprises a control circuit (3) with a memory device (4) and a refresh circuit (10), and the refresh circuit (10) is adapted to prevent data loss of the memory device (4) due to the reduction of the retention time of the memory device (4) caused by the high operation temperature of the LEDs.

3. 发明授权

EP2151146B1 RELIABLE LIGHTING SYSTEM 有权
标题翻译：可靠的照明系统
公开(公告)号：EP2151146B1
公开(公告)日：2011-02-23
申请号：EP08751193.7
申请日：2008-05-09
申请人： Philips Intellectual Property & Standards GmbH , Koninklijke Philips Electronics N.V.
发明人： WENDT, Matthias , LETAVIC, Theodore James
IPC分类号： H05B33/08
CPC分类号： H05B33/0887
摘要： A lighting system (1) and its applications are described that are suitable especially in the realm of lighting systems (1) with high power light emitting diodes (LEDs). The lighting system (1) comprises a control circuit (3) with a memory device (4) and a refresh circuit (10), and the refresh circuit (10) is adapted to prevent data loss of the memory device (4) due to the reduction of the retention time of the memory device (4) caused by the high operation temperature of the LEDs.

4. 发明申请

WO2010058379A2 BICMOS INTEGRATION OF MULTIPLE-TIMES-PROGRAMMABLE NON-VOLATILE MEMORIES 审中-公开
标题翻译：多时间可编程非易失性存储器的BICMOS集成
公开(公告)号：WO2010058379A2
公开(公告)日：2010-05-27
申请号：PCT/IB2009/055304
申请日：2009-11-24
申请人： NXP B.V. , VAN NOORT, Wibo D. , LETAVIC, Theodore James , ZAATO, Francis , MANDHARE, Charudatta
发明人： VAN NOORT, Wibo D. , LETAVIC, Theodore James , ZAATO, Francis , MANDHARE, Charudatta
IPC分类号： H01L21/8239 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L21/8249 , H01L27/06
CPC分类号： H01L27/11526 , H01L27/0623 , H01L27/105 , H01L27/1052 , H01L27/11546 , H01L27/11558
摘要： A BiCMOS substrate includes a bipolar area having a buried carrier layer, and a deep trench isolation (DTI) trench extending into the buried carrier layer to form a surface well implant above a buried well implant within the DTI trench, the buried well implant being the buried carrier layer portion within the DTI trench. A floating gate is disposed on the carrier well. Optionally, a high voltage control gate is formed of a stack of the buried well implant and the surface well implant within the DTI trench. Optionally, a poly layer formed of a bipolar process base poly layer is disposed on the floating gate. Optionally, a shallow well isolation region is formed on the substrate, a floating gate is disposed on the shallow well region, and an overlaying control gate, formed of a bipolar process base poly, is disposed above the floating gate.
摘要翻译： BiCMOS衬底包括具有掩埋载流子层的双极区域和延伸到掩埋载体层中的深沟槽隔离（DTI）沟槽，以在DTI沟槽内的掩埋阱注入之上形成表面阱注入，埋置阱注入为掩埋载体层部分在DTI沟槽内。浮动栅极设置在载体上。可选地，高压控制栅极由掩埋阱注入的堆叠和DTI沟槽内的表面阱注入形成。任选地，由双极工艺基底多晶层形成的多晶硅层设置在浮动栅极上。可选地，在衬底上形成浅阱隔离区域，在浅阱区域上设置浮置栅极，并且在浮置栅极上方设置由双极性工艺基底多晶硅形成的覆盖控制栅极。

5. 发明申请

WO2009077961A2 COLLAPSED MODE OPERABLE CMUT INCLUDING CONTOURED SUBSTRATE 审中-公开
标题翻译：收缩模式可操作，包括嵌入式基板
公开(公告)号：WO2009077961A2
公开(公告)日：2009-06-25
申请号：PCT/IB2008/055279
申请日：2008-12-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS, N.V. , PETRUZZELLO, John , FRASER, John Douglas , ZHOU, Shiwei , DUFORT, Benoit , LETAVIC, Theodore James
发明人： PETRUZZELLO, John , FRASER, John Douglas , ZHOU, Shiwei , DUFORT, Benoit , LETAVIC, Theodore James
CPC分类号： B06B1/0292
摘要： A capacitive ultrasound transducer capable of operation in collapsed mode either with a reduced bias voltage, or with no bias voltage, is provided. The transducer includes a substrate that is contoured so that a middle region of the flexible membrane is collapsed against the substrate in the absence of a bias voltage. A non-collapsible gap may exists between the substrate and peripheral regions of the flexible membrane. The contour of the substrate may be such as to strain the flexible membrane past the point of collapse, or to mechanically interfere with the flexible membrane. The substrate may include a further membrane disposed beneath the flexible membrane, the further membrane being contoured so that the flexible membrane is collapsed against it. The substrate may a support disposed beneath the further membrane to deflect a corresponding portion of the further membrane upward toward the flexible membrane. The support may be a post. The transducer may be operated in collapse mode with an improved efficiency (k 2 eff ) as compared to otherwise similar conventional transducers exhibiting comparably uncontoured substrates. A related medical imaging system is provided, which may include an array of such transducers disposed on a common substrate. A method of operating such a transducer is provided that includes operating the transducer in the collapse mode in the absence of a bias voltage.
摘要翻译：提供能够以折叠模式操作或者具有降低的偏置电压或没有偏置电压的电容式超声换能器。换能器包括基底，该基底的轮廓使得柔性膜的中间区域在没有偏置电压的情况下相对于基底折叠。在柔性膜的基底和周边区域之间可能存在不可收缩的间隙。衬底的轮廓可以是使柔性膜经过塌陷点，或机械地干涉柔性膜。衬底可以包括设置在柔性膜下方的另一膜，另外的膜被成形为使得柔性膜相对于其折叠。衬底可以是设置在另外的膜下方的支撑件，以将另外的膜的相应部分向上朝向柔性膜偏转。支持可能是一个帖子。传感器可以在崩溃模式下操作，与具有相当的未构图基底的其它相似的传统换能器相比，效率（k 2 eff）提高。提供了一种相关的医学成像系统，其可以包括设置在公共基底上的这种换能器的阵列。提供了一种操作这种换能器的方法，其包括在没有偏置电压的情况下以折叠模式操作换能器。

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