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    • 2. 发明申请
    • MINIATURIZED CONFORMAL WIDEBAND FRACTAL ANTENNAS ON HIGH DIELECTRIC SUBSTRATES AND CHIRAL LAYERS
    • 高介电基板和主层的微型一致宽带分离天线
    • WO0201668A3
    • 2002-06-27
    • PCT/US0141184
    • 2001-06-28
    • PENN STATE RES FOUND
    • VARADAN VIJAY KVINOY KALARICKAPARAMBILKILLAKOMPIL JOSE AVARADAN VASUNDARA V
    • H01Q1/36H01Q3/44H01Q9/40H01Q15/00H01Q1/38
    • H01Q3/44H01Q1/36H01Q9/40H01Q15/0093
    • A class of antennas (20) that comprises an electrically conductive fractal pattern disposed on a dielectric substrate (22). One antenna style has a ground plane (26) that is perpendicular to the substrate and another style has a ground plane (82) that is parallel to the substrate. The substrate has a dielectric constant of in the range of about 10 to 600 or more and may be a ferroelectric, such as barium strontium titanate. A bias voltage (52A) applied across the substrate can tune the antenna for operation in a particular frequency range. The antenna can be made especially wideband by placing an absorbing material (62) behind the substrate. The fractal pattern may be any fractal pattern, such as Hibert curve, Koch curve, Sierpinski gasket and Sierpinski carpet. One style of the antenna uses a fractal pattern that has a plurality of segments arranged in a first configuration and a switch (S1, S2) disposed to alter the first configuration to one or more other configurations. The antenna elements may be arranged in a phased array.
    • 一类天线(20),其包括布置在电介质基片(22)上的导电分形图案。 一种天线方式具有垂直于衬底的接地平面(26),另一种类型具有平行于衬底的接地平面(82)。 基板的介电常数在约10-600或更大的范围内,并且可以是铁电体,例如钛酸锶钡。 施加在衬底上的偏置电压(52A)可以调谐天线以在特定频率范围内操作。 通过在衬底后面放置吸收材料(62),可以使天线特别宽。 分形图案可以是任何分形图案,例如Hibert曲线,Koch曲线,Sierpinski垫片和Sierpinski地毯。 天线的一种风格使用具有以第一配置布置的多个段的分形图案和设置成将第一配置改变成一个或多个其它配置的开关(S1,S2)。 天线元件可以布置在相控阵列中。
    • 7. 发明专利
    • MICROWAVE HEATING SYSTEM
    • CA2094316A1
    • 1993-11-05
    • CA2094316
    • 1993-04-19
    • PENN STATE RES FOUND
    • VARADAN VIJAY KVARADAN VASUNDARA VSCHAFFER THOMAS L
    • E04G21/16H05B6/80H05B6/64
    • A system is provided for heating non-metallic material or a discrete layer of the non-metallic material. Microwave energy is introduced into an enclosure defining a first cavity and capable of substantially containing the microwave energy. A semiconductive sheet is positioned at the bottom of the first cavity. Thermal insulation overlies the semiconductive sheet. A second cavity is defined by the undersurface of the semiconductive sheet and flexible microwave shielding in the form of a skirt which is attached to, and depends from, the enclosure. The flexible shielding is composed of a material which also substantially contains the microwave energy. The semiconductive sheet is effective to convert some of the microwave energy into thermal energy and to transmit the thermal energy into the second cavity while transmitting the remainder of the microwave energy directly to the discrete layer, thereby rapidly heating the discrete layer. The system includes a carriage with a handle for moving the apparatus across a surface of the non-metallic material and for adjusting the height of the semiconductive sheet above the surface of the non-metallic material.