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1. 发明公开

EP3297770A1 INSULATOR-COATED QUANTUM DOTS FOR USE IN LED LIGHTING AND DISPLAY DEVICES 有权转让
标题翻译：用于LED照明和显示设备的绝缘体涂层量子点
公开(公告)号：EP3297770A1
公开(公告)日：2018-03-28
申请号：EP16797424.5
申请日：2016-05-20
申请人： Pacific Light Technologies Corp. , Zhao, Weiwen , McLaughlin, Nathan , Jansen, Michael , Kurtin, Juanita N.
发明人： ZHAO, Weiwen , MCLAUGHLIN, Nathan , JANSEN, Michael , KURTIN, Juanita
IPC分类号： B05D5/06 , B05D7/24 , C09K11/00 , C09D5/22 , H01L33/04 , H01L33/44 , G02F1/017 , G02F1/1335
CPC分类号： B05D7/54 , B05D7/04 , B82Y20/00 , B82Y40/00 , C03C17/007 , C03C17/008 , C03C17/34 , C03C17/42 , C03C2217/29 , C03C2217/42 , C03C2217/445 , C03C2217/48 , C03C2218/152 , C09K11/025 , C09K11/883 , F21K9/232 , F21K9/64 , G02B5/00 , H01L33/502 , H01L2933/0041 , Y10S977/774 , Y10S977/89 , Y10S977/95
摘要： A method comprises coating a plurality of quantum dots with one or more insulating layers, dispensing the coated quantum dots in a sheet, and installing the coated quantum dots sheet in an light emitting diode (LED) lighting or electronic display device.

2. 发明申请

WO2016187599A1 INSULATOR-COATED QUANTUM DOTS FOR USE IN LED LIGHTING AND DISPLAY DEVICES 审中-公开
标题翻译：用于LED照明和显示设备的绝缘体涂层量子点
公开(公告)号：WO2016187599A1
公开(公告)日：2016-11-24
申请号：PCT/US2016/033656
申请日：2016-05-20
申请人： PACIFIC LIGHT TECHNOLOGIES, CORP. , ZHAO, Weiwen , MCLAUGHLIN, Nathan , JANSEN, Michael , KURTIN, Juanita
发明人： ZHAO, Weiwen , MCLAUGHLIN, Nathan , JANSEN, Michael , KURTIN, Juanita
IPC分类号： B05D5/06 , B05D7/24 , C09K11/00 , C09D5/22 , H01L33/04 , H01L33/44 , G02F1/017 , G02F1/1335
CPC分类号： B05D7/54 , B05D7/04 , B82Y20/00 , B82Y40/00 , C03C17/007 , C03C17/008 , C03C17/34 , C03C17/42 , C03C2217/29 , C03C2217/42 , C03C2217/445 , C03C2217/48 , C03C2218/152 , C09K11/025 , C09K11/883 , F21K9/232 , F21K9/64 , G02B5/00 , H01L33/502 , H01L2933/0041 , Y10S977/774 , Y10S977/89 , Y10S977/95
摘要： A method comprises coating a plurality of quantum dots with one or more insulating layers, dispensing the coated quantum dots in a sheet, and installing the coated quantum dots sheet in a light emitting diode (LED) lighting or electronic display device.
摘要翻译：一种方法包括用一个或多个绝缘层涂覆多个量子点，将涂覆的量子点分配在片材中，以及将涂覆的量子点片材安装在发光二极管（LED）照明或电子显示装置中。

3. 发明申请

WO2016145109A1 QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS 审中-公开
标题翻译：量子点与多个绝缘涂层
公开(公告)号：WO2016145109A1
公开(公告)日：2016-09-15
申请号：PCT/US2016/021605
申请日：2016-03-09
申请人： PACIFIC LIGHT TECHNOLOGIES, CORP. , THEOBALD, Brian , BERTRAM, Matthew , ZHAO, Weiwen , KURTIN, Juanita N. , PUETZ, Norbert
发明人： THEOBALD, Brian , BERTRAM, Matthew , ZHAO, Weiwen , KURTIN, Juanita N. , PUETZ, Norbert
IPC分类号： H01L21/205
CPC分类号： H01L33/502 , B82Y20/00 , B82Y40/00 , C09C3/06 , C09C3/063 , Y10S977/774 , Y10S977/824 , Y10S977/893 , Y10S977/95
摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.
摘要翻译：制造半导体结构，包括从第一半导体材料形成纳米晶核，从至少部分地围绕纳米晶核的第二不同的半导体材料形成纳米晶体壳，其中纳米晶核和纳米晶体壳形成量子点。制造还涉及形成封装量子点的绝缘体层以产生涂覆的量子点，并且使用原子层沉积（ALD）工艺在涂覆的量子点上形成额外的绝缘体层。

4. 发明申请

WO2016183530A1 COMPOSITION OF, AND METHOD FOR FORMING, A SEMICONDUCTOR STRUCTURE WITH MULTIPLE INSULATOR COATINGS 审中-公开
标题翻译：用多种绝缘体涂层形成半导体结构的组合物和方法
公开(公告)号：WO2016183530A1
公开(公告)日：2016-11-17
申请号：PCT/US2016/032557
申请日：2016-05-13
申请人： PACIFIC LIGHT TECHNOLOGIES, CORP. , ZHAO, Weiwen , KURTIN, Juanita N.
发明人： ZHAO, Weiwen , KURTIN, Juanita N.
IPC分类号： C09K11/00 , H01L33/04 , H01L33/52 , H01L33/56 , H01L33/44
CPC分类号： C09K11/025 , B82B3/0019 , C09K11/883 , H01L33/502 , Y10S438/962 , Y10S977/774 , Y10S977/952
摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum.
摘要翻译：制造半导体结构，包括从第一半导体材料形成纳米晶核，从至少部分地包围纳米晶核的第二不同的半导体材料形成纳米晶体壳，其中纳米晶核和纳米晶体壳形成量子点。制造还涉及形成封装量子点的绝缘体层以产生涂覆的量子点，并在涂覆的量子上形成附加的绝缘体层。

5. 发明公开

EP3268981A1 QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS 有权转让
标题翻译：量子点与多个绝缘涂层
公开(公告)号：EP3268981A1
公开(公告)日：2018-01-17
申请号：EP16762453.5
申请日：2016-03-09
申请人： Pacific Light Technologies Corp. , Theobald, Brian , Bertram, Matthew , Zhao, Weiwen , Kurtin, Juanita N. , Puetz, Norbert
发明人： THEOBALD, Brian , BERTRAM, Matthew , ZHAO, Weiwen , KURTIN, Juanita N. , PUETZ, Norbert
IPC分类号： H01L21/205
CPC分类号： H01L33/502 , B82Y20/00 , B82Y40/00 , Y10S977/774 , Y10S977/824 , Y10S977/893 , Y10S977/95
摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

6. 发明申请

WO2015026464A1 SEMICONDUCTOR STRUCTURE WITH INSULATOR COATING 审中-公开
标题翻译：具有绝缘体涂层的半导体结构
公开(公告)号：WO2015026464A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/047380
申请日：2014-07-21
申请人： PACIFIC LIGHT TECHNOLOGIES CORP.
发明人： KURTIN, Juanita N. , ZHAO, Weiwen
IPC分类号： H01L33/04
CPC分类号： H01L33/502 , B01J13/08 , B82Y20/00 , B82Y40/00 , C01B19/007 , C01P2002/60 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C09K11/025 , C09K11/883 , H01L33/501 , Y10S977/774 , Y10S977/824 , Y10S977/892 , Y10S977/896 , Y10S977/95
摘要： Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.
摘要翻译：描述了具有绝缘体涂层的半导体结构和制造具有绝缘体涂层的半导体结构的方法。在一个实例中，涂覆半导体结构的方法包括将含硅二氧化硅前体物质添加到纳米晶体的溶液中。该方法还涉及在涉及含硅二氧化硅前体物质的反应中在纳米晶体上形成二氧化硅基绝缘体层。该方法还包括在初始形成二氧化硅基绝缘体层之后添加额外量的含硅二氧化硅前体物质，同时继续形成二氧化硅基绝缘体层以最终封装每个纳米晶体。

7. 发明申请

WO2018140895A1 COMPOSITION OF, AND METHOD FOR FORMING, A SEMICONDUCTOR STRUCTURE WITH POLYMER AND INSULATOR COATINGS 审中-公开
公开(公告)号：WO2018140895A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/015780
申请日：2018-01-29
申请人： PACIFIC LIGHT TECHNOLOGIES CORP.
发明人： ZHAO, Weiwen , KURTIN, Juanita, N.
IPC分类号： H01L33/50 , C09K11/02 , C09K11/08 , H01L51/50
摘要： A semiconductor structure includes a quantum dot. A polymeric organic layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional organic layer and/or inorganic insulator layer encapsulates the coated quantum dot.

8. 发明申请

WO2015002842A1 NETWORK OF SEMICONDUCTOR STRUCTURES WITH FUSED INSULATOR COATING 审中-公开
标题翻译：具有绝缘绝缘子涂层的半导体结构网络
公开(公告)号：WO2015002842A1
公开(公告)日：2015-01-08
申请号：PCT/US2014/044663
申请日：2014-06-27
申请人： PACIFIC LIGHT TECHNOLOGIES CORP.
发明人： MANGUM, Benjamin Daniel , ZHAO, Weiwen , HALEY, Kari N. , KURTIN, Juanita N.
IPC分类号： H01L33/44 , H01L33/04
CPC分类号： C09K11/883 , C01B19/007 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C09K11/02 , H01L33/502
摘要： Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH) 2 , Sr(OH) 2 , Ba(OH) 2 , (Me) 4 NOH, (Et) 4 NOH, or (Bu) 4 NOH.
摘要翻译：描述了具有熔融绝缘体涂层的半导体结构的网络以及制造具有熔融绝缘体涂层的半导体结构网络的方法。在一个示例中，制造半导体结构的方法包括形成包括多个离散半导体纳米晶体的混合物。多个离散半导体纳米晶体中的每一个离散地被绝缘体外壳涂覆。该方法还包括向混合物中加入碱以熔化多个离散的纳米晶体中的每一个的绝缘体壳，从而提供绝缘体网络。多个离散半导体纳米晶体中的每一个通过绝缘体网络彼此间隔开。例如但不限于LiOH，RbOH，CsOH，MgOH，Ca（OH）2，Sr（OH）2，Ba（OH）2，（Me）4NOH，（Et）4NOH或（Bu ）4 NOH。

9. 发明公开

EP3017484A1 NETWORK OF SEMICONDUCTOR STRUCTURES WITH FUSED INSULATOR COATING 有权转让
标题翻译：半导体结构的冷凝隔离器涂料网
公开(公告)号：EP3017484A1
公开(公告)日：2016-05-11
申请号：EP14820485.2
申请日：2014-06-27
申请人： Pacific Light Technologies Corp.
发明人： MANGUM, Benjamin Daniel , ZHAO, Weiwen , HALEY, Kari N. , KURTIN, Juanita N. , STOTT, Nathan Evan
IPC分类号： H01L33/44 , H01L33/04
CPC分类号： C09K11/883 , C01B19/007 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C09K11/02 , H01L33/502
摘要： Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH)
2 , Sr(OH)
2 , Ba(OH)
2 , (Me)
4 NOH, (Et)
4 NOH, or (Bu)
4 NOH.

10. 发明授权

EP3017484B1 NETWORK OF SEMICONDUCTOR STRUCTURES WITH FUSED INSULATOR COATING 有权转让
公开(公告)号：EP3017484B1
公开(公告)日：2018-08-01
申请号：EP14820485.2
申请日：2014-06-27
申请人： Pacific Light Technologies Corp.
发明人： MANGUM, Benjamin Daniel , ZHAO, Weiwen , HALEY, Kari N. , KURTIN, Juanita N. , STOTT, Nathan Evan
IPC分类号： H01L33/50 , C09K11/02 , C09K11/88
CPC分类号： C09K11/883 , C01B19/007 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C09K11/02 , H01L33/502
摘要： Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH)2, Sr(OH)2, Ba(OH)2, (Me)4NOH, (Et)4NOH, or (Bu)4NOH.

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