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1. 发明申请

US20070091669A1 Giant magneto-resistive static read RAM memory architecture 失效
标题翻译：巨型磁阻静态读取存储器架构
公开(公告)号：US20070091669A1
公开(公告)日：2007-04-26
申请号：US11257327
申请日：2005-10-24
申请人： Owen Hynes , Roy Wang , Romney Katti , Daniel Reed
发明人： Owen Hynes , Roy Wang , Romney Katti , Daniel Reed
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.
摘要翻译：提出了一种包含辐射硬化和低功率存储单元的磁阻存储器系统。磁阻存储单元包括单元中的字线选择晶体管，以帮助消除未选择的单元干扰。此外，磁阻存储器单元包括使用比以前的单元架构更少的电流写入真实和互补位值的全匝写入字线。改进的存储单元可以用于具有精密电流驱动器和自动零感测放大器的存储器系统中，以便进一步降低功率并提高整体系统的可靠性。

2. 发明申请

US20070109839A1 MRAM read sequence using canted bit magnetization 有权
标题翻译： MRAM使用斜位磁化读取序列
公开(公告)号：US20070109839A1
公开(公告)日：2007-05-17
申请号：US11273214
申请日：2005-11-14
申请人： Romney Katti , Owen Hynes , Daniel Reed , Hassan Kaakani
发明人： Romney Katti , Owen Hynes , Daniel Reed , Hassan Kaakani
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A new read scheme is provided for an MRAM bit having a pinned layer (fixed) and a storage layer (free) sandwiching a nonmagnetic spacer layer. By applying a magnetic field to the bit at least partially orthogonal to the easy axis of the bit, the magnetization direction of the storage layer can be partially rotated or canted without switching the logical state of the MRAM bit. The resistivity of the bit is measured (calculated based on a voltage/current relationship) in two ways: (i) with the magnetization direction of the storage layer partially rotated in a first direction and (ii) with the magnetization direction of the storage layer in its bi-stable orientation parallel to the easy axis. Those measures can then be used to compare and determine the logical state of the storage layer. For instance, if the canted resistivity is greater than the uncanted resistivity then the magnetization directions of the pinned and storage layer are parallel, and if the canted resistivity is less than the uncanted resistivity then the magnetization directions of the pinned and storage layer are opposite.
摘要翻译：为具有钉扎层（固定）和夹持非磁性间隔层的存储层（自由）的MRAM位提供了新的读取方案。通过将至少部分地正交于该位的容易轴的位施加磁场，可以在不切换MRAM位的逻辑状态的情况下部分地旋转或倾斜存储层的磁化方向。以两种方式测量位的电阻率（基于电压/电流关系计算）：（i）存储层的磁化方向在第一方向上部分旋转，并且（ii）与存储层的磁化方向其平行于易轴的双稳态取向。然后可以使用这些措施来比较和确定存储层的逻辑状态。例如，如果倾斜电阻率大于无电阻率，那么被钉扎层和存储层的磁化方向是平行的，并且如果斜面电阻率小于未被覆盖的电阻率，那么被钉扎和存储层的磁化方向相反。

3. 发明申请

US20060277747A1 Methods for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20060277747A1
公开(公告)日：2006-12-14
申请号：US11508671
申请日：2006-08-22
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

4. 发明申请

US20050101079A1 Bit end design for pseudo spin valve (PSV) devices 失效
标题翻译：伪自旋阀（PSV）器件的位端设计
公开(公告)号：US20050101079A1
公开(公告)日：2005-05-12
申请号：US10706067
申请日：2003-11-12
申请人： Romney Katti , Paul Fechner , Gordon Shaw , Daniel Reed , David Zou
发明人： Romney Katti , Paul Fechner , Gordon Shaw , Daniel Reed , David Zou
IPC分类号： G11C11/16 , H01L21/8238
CPC分类号： G11C11/16
摘要： In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.
摘要翻译：在制造磁阻存储器件的过程中，通过使用任何合适的设计工具来生产掩模布局。掩模布局布置在具有形成中心部分的中心格栅和形成钻头末端部分的格栅的格栅中，钻头端部的格栅为矩形。使用掩模布局制作掩模，并且掩模具有阶梯位。该掩模用于制造具有锥形位端的磁存储层，以形成具有锥形位端的磁感应层，并制成具有锥形位端的非磁性层。非磁性层位于磁感应层和磁性存储层之间。

5. 发明申请

US20050097725A1 Method for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20050097725A1
公开(公告)日：2005-05-12
申请号：US10706531
申请日：2003-11-12
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/39 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/12 , G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

6. 发明授权

US10263936B2 Computational systems and methods for identifying a communications partner 有权
公开(公告)号：US10263936B2
公开(公告)日：2019-04-16
申请号：US13374247
申请日：2011-12-16
申请人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K. Y. Jung , Jordin T. Kare , Royce A. Levien , Richard T. Lord , Robert W. Lord , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, Jr.
发明人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K. Y. Jung , Jordin T. Kare , Royce A. Levien , Richard T. Lord , Robert W. Lord , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, Jr.
IPC分类号： G06F15/16 , H04L12/58 , H04L29/08
摘要： Methods, apparatuses, computer program products, devices and systems are described that carry out accepting at least one email communication from at least one member of a network; disambiguating the at least one search term including associating the at least one search term with at least one of network-participation identifier data or device-identifier data; and presenting the sender profile in association with the at least one email communication.

7. 发明授权

US09473647B2 Computational systems and methods for identifying a communications partner 有权
公开(公告)号：US09473647B2
公开(公告)日：2016-10-18
申请号：US13373872
申请日：2011-12-02
申请人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K. Y. Jung , Jordin T. Kare , Royce A. Levien , Richard T. Lord , Robert W. Lord , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, Jr.
发明人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K. Y. Jung , Jordin T. Kare , Royce A. Levien , Richard T. Lord , Robert W. Lord , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, Jr.
IPC分类号： H04M11/00 , H04M7/12 , H04M3/42
CPC分类号： H04M11/00 , H04M3/42042 , H04M3/42068 , H04M7/128 , H04M2203/655
摘要： Methods, apparatuses, computer program products, devices and systems are described that carry out accepting at least one telephone communication from at least one member of a network; disambiguating the at least one search term including associating the at least one search term with at least one of network-participation identifier data or device-identifier data; and presenting the sender profile in association with the at least one telephone communication.

8. 发明授权

US08959082B2 Context-sensitive query enrichment 有权
标题翻译：上下文相关查询丰富
公开(公告)号：US08959082B2
公开(公告)日：2015-02-17
申请号：US13373825
申请日：2011-11-30
申请人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K. Y. Jung , Jordin T. Kare , Royce A. Levien , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, Jr.
发明人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K. Y. Jung , Jordin T. Kare , Royce A. Levien , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, Jr.
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06F17/30032 , G06F17/30047
摘要： Structures and protocols are presented for facilitating a search partly based on a movement status of a search-capable device or on a position of a person's limb or on an association with another search-capable device.
摘要翻译：呈现结构和协议，以便部分地基于可搜索设备的移动状态或者人的肢体的位置或与另一个具有搜索能力的设备的关联来促进搜索。

9. 发明授权

US08796954B2 Dimming control for electronic lamp 有权
标题翻译：电子灯调光控制
公开(公告)号：US08796954B2
公开(公告)日：2014-08-05
申请号：US13272446
申请日：2011-10-13
申请人： Wanfeng Zhang , Radu Pitigoi-Aron , Daniel Reed
发明人： Wanfeng Zhang , Radu Pitigoi-Aron , Daniel Reed
IPC分类号： H05B37/02 , H05B39/04
CPC分类号： H05B33/0815
摘要： In one embodiment, an apparatus includes circuitry configured to receive a dimming input to control a dimming level of a lamp. Also, the apparatus includes circuitry configured to generate a control signal based on the dimming input. The control signal indicates the dimming level for a converter of the lamp and the converter is configured to interpret the control signal to control to the dimming level of the lamp using a sinusoidal signal.
摘要翻译：在一个实施例中，一种装置包括被配置为接收调光输入以控制灯的调光水平的电路。而且，该装置包括经配置以基于调光输入产生控制信号的电路。控制信号指示灯的转换器的调光电平，并且转换器被配置为使用正弦信号来解释控制信号以控制灯的调光电平。

10. 发明申请

US20130110804A1 Context-sensitive query enrichment 审中-公开
公开(公告)号：US20130110804A1
公开(公告)日：2013-05-02
申请号：US13317984
申请日：2011-10-31
申请人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K.Y. Jung , Jordin T. Kare , Royce A. Levien , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, JR.
发明人： Marc E. Davis , Matthew G. Dyor , William Gates , Xuedong Huang , Roderick A. Hyde , Edward K.Y. Jung , Jordin T. Kare , Royce A. Levien , Qi Lu , Mark A. Malamud , Nathan P. Myhrvold , Satya Nadella , Daniel Reed , Harry Shum , Clarence T. Tegreene , Lowell L. Wood, JR.
IPC分类号： G06F17/30
CPC分类号： G06F3/017 , G06F3/0304 , G06F16/9032
摘要： Structures and protocols are presented for facilitating a search partly based on a movement status of a search-capable device or on a position of a person's limb or on an association with another search-capable device.

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