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1. 发明授权

US5514628A Two-step sinter method utilized in conjunction with memory cell replacement by redundancies 失效
标题翻译：结合存储器单元更换冗余的两步烧结方法
公开(公告)号：US5514628A
公开(公告)日：1996-05-07
申请号：US451644
申请日：1995-05-26
申请人： Osaomi Enomoto , Yoichi Miyai , Yoshihiro Ogata , Yoshinobu Yoneoka
发明人： Osaomi Enomoto , Yoichi Miyai , Yoshihiro Ogata , Yoshinobu Yoneoka
IPC分类号： H01L21/324 , H01L27/118
CPC分类号： H01L21/324 , H01L27/118
摘要： A process is disclosed herein for increasing yield in a semiconductor circuity having redundant circuitry for replacing defective normal circuitry in the semiconductor integrated circuit. In the first step, an insufficient sinter operation (50) is carried out in a hydrogen atmosphere at a temperature of less than 350.degree. C. At this temperature, no significant change will be seen in the interface trap density. Thereafter, the integrated circuit is tested (54,56) and the defective normal circuitry then is replaced (58) with the redundant circuitry. The integrated circuit is then subjected to a sufficient sinter operation (64) which is an operation wherein the substrate is disposed at a temperature between 350.degree. C.-500.degree. C. for more than 30 minutes. This sufficient sinter operation is performed in a hydrogen atmosphere, allowing dangling bonds at the interface to be terminated with hydrogen. Preferable, the optimal temperature for the sufficient sinter is approximately 400.degree. C. The integrated circuit is then subjected to a reliability and burn-in procedure.
摘要翻译：本文公开了一种用于提高具有用于替换半导体集成电路中的有缺陷的正常电路的冗余电路的半导体电路中的产量的方法。在第一步骤中，在低于350℃的氢气气氛中进行不充分的烧结操作（50）。在该温度下，界面陷阱密度将不会发生明显的变化。此后，测试集成电路（54,56），然后用冗余电路替换有缺陷的正常电路（58）。然后对集成电路进行充分的烧结操作（64），其是将衬底置于350℃-5500℃的温度下超过30分钟的操作。这种充分的烧结操作在氢气氛中进行，允许界面处的悬挂键用氢终止。优选的是，足够的烧结体的最佳温度为约400℃。然后对集成电路进行可靠性和老化过程。

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