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    • 9. 发明授权
    • Epitaxial growth apparatus and epitaxial growth method
    • 外延生长装置和外延生长法
    • US09273414B2
    • 2016-03-01
    • US12945299
    • 2010-11-12
    • Fumihiko KimuraKazuhisa IwanagaTakeshi Masuda
    • Fumihiko KimuraKazuhisa IwanagaTakeshi Masuda
    • C30B25/02C30B29/06C30B25/12
    • C30B29/06C30B25/02C30B25/12
    • An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.
    • 本发明的目的是提供一种能够抑制由于感受器的偏转引起的半导体晶片的面内温度变化的外延生长装置和外延生长方法,并且制造高质量的外延晶片。 具体地说,本发明提供了一种用于在放置在具有用于处理气体的供给口和排气口的室中的半导体晶片上形成外延膜的外延生长装置,该设备包括:用于将半导体晶片放置在其内的基座 房间 以及用于将基座支撑在基座的下部的基座支撑轴,其中,所述基座支撑轴具有与所述基座的中心基本同轴的支撑柱,以及从所述基座的顶端径向延伸的至少四个支撑臂 支撑柱之间具有相等的间隔。