专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050109955A1 Charged particle beam lithography system, pattern drawing method, and method of manufacturing semiconductor device 有权
标题翻译：带电粒子束光刻系统，图案绘制方法和制造半导体器件的方法
公开(公告)号：US20050109955A1
公开(公告)日：2005-05-26
申请号：US10959508
申请日：2004-10-07
申请人： Osamu Nagano , Atsushi Ando
发明人： Osamu Nagano , Atsushi Ando
IPC分类号： G03F7/20 , A61N5/00 , H01J37/147 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam lithography system includes: a charged particle beam source which generates a charged particle beam and irradiates a substrate therewith; an aperture in which has been formed a pattern of a shape corresponding to an arbitrary pattern to be drawn; an illuminator which adjusts the diameter of the charged particle beam and illuminates the aperture with the charged particle beam; a first deflector which deflects the charged particle beam by an electrical field to cause the charged particle beam to be incident on an arbitrary pattern, allowing the charged particle beam to pass through the aperture and be reflected back along the optical axis; a first demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has passed through the aperture with the use of an electrical field or electromagnetic field; a second demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has been demagnified by the first demagnification projection optical system, with the use of an electrical field or electromagnetic field to form an image on the substrate; and a beam diameter adjuster which adjusts the illuminator in such a manner that the beam diameter at crossovers of the charged particle beam, formed between the aperture and the first demagnification optical projection system and within the second demagnification optical projection system, is greater than the size of the pattern.
摘要翻译：带电粒子束光刻系统包括：带电粒子束源，其产生带电粒子束并照射衬底; 已经形成了与要拉制的任意图案相对应的形状的图案的孔; 照明器，其调节带电粒子束的直径并用带电粒子束照射孔径; 第一偏转器，其通过电场使带电粒子束偏转，以使带电粒子束入射到任意图案上，允许带电粒子束通过孔径并沿光轴反射回; 第一缩小光学投影系统，其通过使用电场或电磁场来对通过所述孔径的带电粒子束的孔径图像进行缩小; 第二缩小光学投影系统，其通过使用电场或电磁场在所述基板上形成图像来对由所述第一缩尺投影光学系统进行了缩小的带电粒子束的孔径图像进行缩小; 以及光束直径调节器，其以这样的方式调节照明器，使得形成在孔和第一缩小光学投影系统之间并且在第二缩小光学投影系统内的带电粒子束的交叉处的光束直径大于尺寸的模式。

2. 发明授权

US06940080B2 Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device 有权
标题翻译：带电粒子束光刻系统，使用带电粒子束的光刻法，控制带电粒子束的方法以及制造半导体器件的方法
公开(公告)号：US06940080B2
公开(公告)日：2005-09-06
申请号：US10394208
申请日：2003-03-24
申请人： Osamu Nagano , Susumu Hashimoto , Yuichiro Yamazaki , Atsushi Ando
发明人： Osamu Nagano , Susumu Hashimoto , Yuichiro Yamazaki , Atsushi Ando
IPC分类号： G03F7/20 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a cell aperture having a cell pattern corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field to enter a desired cell pattern of the cell aperture; a demagnification projection optical system which demagnifies the charged particle beam form the cell aperture with a second electric field to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer.
摘要翻译：带电粒子束光刻系统包括带电粒子束发射器，其以低于导致邻近效应的电压的加速电压向晶片发射带电粒子束; 照明光学系统，其调节带电束的光束半径; 具有对应于要写入的期望图案的单元图案的单元孔径; 第一偏转器，其利用第一电场偏转带电粒子束以进入所述单元孔径的期望的单元图案; 一种缩小投影光学系统，其用带有第二电场的带电粒子束形成电池孔，以在晶片上形成图像; 以及第二偏转器，其利用第三电场使带电粒子束从电池孔径偏转，以调整带电粒子束在晶片上的照射位置。

3. 发明授权

US07095023B2 Charged particle beam apparatus, charged particle detection method, and method of manufacturing semiconductor device 失效
标题翻译：带电粒子束装置，带电粒子检测方法和制造半导体器件的方法
公开(公告)号：US07095023B2
公开(公告)日：2006-08-22
申请号：US10969856
申请日：2004-10-22
申请人： Osamu Nagano , Atsushi Ando
发明人： Osamu Nagano , Atsushi Ando
IPC分类号： H01J37/08
CPC分类号： H01J37/244
摘要： A charged particle beam apparatus includes: a charged particle beam source which generates a charged particle beam to irradiate the charged particle beam onto a specimen; a demagnification optical system which demagnifies the charged particle beam; a deflector which deflects the charged particle beam to scan the specimen; and a first charged particle detector having a detection surface to detect a charged particle generated from the specimen which has been irradiated with the charged particle beam; wherein the detection surface of the first charged particle detector is disposed so as to face towards the charged particle beam source.
摘要翻译：带电粒子束装置包括：带电粒子束源，其产生带电粒子束以将带电粒子束照射到样本上; 使放电的粒子束缩小的缩小光学系统; 偏转器，其使带电粒子束偏转以扫描样本; 以及具有检测表面的第一带电粒子检测器，用于检测从已经照射带电粒子束的样本产生的带电粒子; 其中所述第一带电粒子检测器的检测表面设置成面向所述带电粒子束源。

4. 发明申请

US20050139789A1 Charged particle beam apparatus, charged particle detection method, and method of manufacturing semiconductor device 失效
标题翻译：带电粒子束装置，带电粒子检测方法和制造半导体器件的方法
公开(公告)号：US20050139789A1
公开(公告)日：2005-06-30
申请号：US10969856
申请日：2004-10-22
申请人： Osamu Nagano , Atsushi Ando
发明人： Osamu Nagano , Atsushi Ando
IPC分类号： G01N23/225 , G21K5/04 , H01J37/08 , H01J37/20 , H01J37/244 , H01J37/305 , H01L21/027 , H01L21/66
CPC分类号： H01J37/244
摘要： A charged particle beam apparatus includes: a charged particle beam source which generates a charged particle beam to irradiate the charged particle beam onto a specimen; a demagnification optical system which demagnifies the charged particle beam; a deflector which deflects the charged particle beam to scan the specimen; and a first charged particle detector having a detection surface to detect a charged particle generated from the specimen which has been irradiated with the charged particle beam; wherein the detection surface of the first charged particle detector is disposed so as to face towards the charged particle beam source.
摘要翻译：带电粒子束装置包括：带电粒子束源，其产生带电粒子束以将带电粒子束照射到样本上; 使放电的粒子束缩小的缩小光学系统; 偏转器，其使带电粒子束偏转以扫描样本; 以及具有检测表面的第一带电粒子检测器，用于检测从已经照射带电粒子束的样本产生的带电粒子; 其中所述第一带电粒子检测器的检测表面设置成面向所述带电粒子束源。

5. 发明授权

US07109501B2 Charged particle beam lithography system, pattern drawing method, and method of manufacturing semiconductor device 有权
标题翻译：带电粒子束光刻系统，图案绘制方法和制造半导体器件的方法
公开(公告)号：US07109501B2
公开(公告)日：2006-09-19
申请号：US10959508
申请日：2004-10-07
申请人： Osamu Nagano , Atsushi Ando
发明人： Osamu Nagano , Atsushi Ando
IPC分类号： H01J37/08 , H01J37/30 , A61N5/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam lithography system includes: a charged particle beam source which generates a charged particle beam and irradiates a substrate therewith; an aperture in which has been formed a pattern of a shape corresponding to an arbitrary pattern to be drawn; an illuminator which adjusts the diameter of the charged particle beam and illuminates the aperture with the charged particle beam; a first deflector which deflects the charged particle beam by an electrical field to cause the charged particle beam to be incident on an arbitrary pattern, allowing the charged particle beam to pass through the aperture and be reflected back along the optical axis; a first demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has passed through the aperture with the use of an electrical field or electromagnetic field; a second demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has been demagnified by the first demagnification projection optical system, with the use of an electrical field or electromagnetic field to form an image on the substrate; and a beam diameter adjuster which adjusts the illuminator in such a manner that the beam diameter at crossovers of the charged particle beam, formed between the aperture and the first demagnification optical projection system and within the second demagnification optical projection system, is greater than the size of the pattern.
摘要翻译：带电粒子束光刻系统包括：带电粒子束源，其产生带电粒子束并照射衬底; 已经形成了与要拉制的任意图案相对应的形状的图案的孔; 照明器，其调节带电粒子束的直径并用带电粒子束照射孔径; 第一偏转器，其通过电场使带电粒子束偏转，以使带电粒子束入射到任意图案上，允许带电粒子束通过孔径并沿光轴反射回; 第一缩小光学投影系统，其通过使用电场或电磁场来对通过所述孔径的带电粒子束的孔径图像进行缩小; 第二缩小光学投影系统，其通过使用电场或电磁场在所述基板上形成图像来对由所述第一缩尺投影光学系统进行了缩小的带电粒子束的孔径图像进行缩小; 以及光束直径调节器，其以这样的方式调节照明器，使得形成在孔和第一缩小光学投影系统之间并且在第二缩小光学投影系统内的带电粒子束的交叉处的光束直径大于尺寸的模式。

6. 发明授权

US07487286B2 Flash memory and method for controlling the memory 有权
标题翻译：闪存和控制存储器的方法
公开(公告)号：US07487286B2
公开(公告)日：2009-02-03
申请号：US11083016
申请日：2005-03-18
申请人： Osamu Nagano , Isamu Nakajima
发明人： Osamu Nagano , Isamu Nakajima
IPC分类号： G06F12/00 , G06F13/00
CPC分类号： G11C7/1051 , G06F12/0246 , G11C7/1063 , G11C11/16 , G11C11/22 , G11C16/102 , G11C16/26
摘要： A flash memory is arranged to notice the state inside the flash memory to the outside for supporting a garbage collection. The flash memory includes a state information generator and an output unit. The state information generator generates state information that indicates a state of each user area for noticing it to the outside. The output unit outputs the state information to the outside for noticing the state inside the flash memory to the outside.
摘要翻译：闪存被布置为将闪存中的状态注意到外部用于支持垃圾收集。闪存包括状态信息发生器和输出单元。状态信息生成器生成指示每个用户区域向外部注意的状态的状态信息。输出单元将状态信息输出到外部，以将闪存中的状态注意到外部。

7. 发明申请

US20070187622A1 Charged particle beam apparatus, defect correcting method, etching method, deposition method, and charge preventing method 有权
标题翻译：带电粒子束装置，缺陷校正方法，蚀刻方法，沉积方法和电荷防止方法
公开(公告)号：US20070187622A1
公开(公告)日：2007-08-16
申请号：US11657467
申请日：2007-01-25
申请人： Osamu Nagano
发明人： Osamu Nagano
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , H01J2237/31744
摘要： A charged particle beam apparatus includes a column, the column having: a charged particle beam source which generates a charged particle beam to apply a charged particle beam to the surface of a substrate, a position where the charged particle beam is irradiated to the substrate being a beam position; and a gas mechanism provided in proximity to the substrate to supply a gas to the surface of the substrate, the gas mechanism having an opening which permits passage of the charged particle beam, a gas supply opening which locally injects the gas to the vicinity of the beam position, and a gas exhaust opening which exhausts the injected gas in the vicinity of the beam position to exhaust the gas.
摘要翻译：带电粒子束装置包括柱，所述柱具有：带电粒子束源，其产生带电粒子束以将带电粒子束施加到衬底的表面，将带电粒子束照射到衬底的位置为梁位置; 以及气体机构，其设置在所述基板附近，以将气体供应到所述基板的表面，所述气体机构具有允许所述带电粒子束通过的开口;气体供给开口，其将所述气体局部地喷射到所述基板的附近; 射束位置和排气口，其排出喷射气体附近的喷射气体以排出气体。

8. 发明授权

US6008469A Laser beam branching apparatus 失效
标题翻译：激光束分支装置
公开(公告)号：US6008469A
公开(公告)日：1999-12-28
申请号：US951557
申请日：1997-10-16
申请人： Atsuhiko Kawamura , Osamu Nagano
发明人： Atsuhiko Kawamura , Osamu Nagano
IPC分类号： G02B7/182 , B23K26/067 , G02B6/28 , G02B6/35 , G02B6/42 , G02B26/08 , B23K26/06 , G02B27/14
CPC分类号： G02B6/352 , B23K26/067 , B23K26/0673 , G02B26/0816 , G02B6/4296 , G02B6/2817 , G02B6/355
摘要： A branching mirror and a transfer mirror receiving a laser beam reflected on the branching mirror and outputting a laser beam in a direction parallel to the laser beam coming into the branching mirror are fixed to and mounted on one mirror holder. The mirror holder is movably provided between a branching position at which the branching mirror is located in a light path of the laser beam and an escaping position at which the branching mirror is located outside the light path of the laser beam, and while the mirror holder is located at the beam branching position, a laser beam from a laser oscillator can be introduced to the branching mirror.
摘要翻译：接收在分支反射镜上反射并在平行于入射到分光镜的激光束的方向上输出激光束的分束镜和转印镜被固定并安装在一个反射镜支架上。反射镜保持器可移动地设置在分支反射镜位于激光束的光路中的分支位置与分支反射镜位于激光束的光路外侧的逸出位置之间，而镜支架位于光束分支位置，来自激光振荡器的激光束可以被引入分支反射镜。

9. 发明授权

US5317116A Pulse welding apparatus 失效
标题翻译：脉冲焊接设备
公开(公告)号：US5317116A
公开(公告)日：1994-05-31
申请号：US668519
申请日：1991-03-27
申请人： Yoichiro Tabata , Shigeo Ueguri , Yoshihiro Ueda , Masanori Mizuno , Yoshiaki Katou , Osamu Nagano
发明人： Yoichiro Tabata , Shigeo Ueguri , Yoshihiro Ueda , Masanori Mizuno , Yoshiaki Katou , Osamu Nagano
IPC分类号： B23K9/073 , B23K9/09 , B23K9/095 , B23K9/10 , G05F1/08
CPC分类号： B23K9/1062 , B23K9/0734 , B23K9/092 , B23K9/0953 , G05F1/08
摘要： A pulse welding apparatus using a pulse discharge such as a pulse arc welding apparatus and a short-circuit transfer arc welding apparatus. A pulse current waveform control circuit, which controls the pulse arc current so that a desired pulse arc current is supplied to the arc welding power supply for outputting the pulse arc current to the welding load unit, is constructed such that the optimum welding operation may be performed without having to adjust circuit components and modify circuit design. The pulse current waveform control circuit is in the form of a microcomputerized digital circuit which operates under a program to provide a desired pulse arc current. A modification of the program can provide any desired pulse arc currents without changing circuits. The optimum welding current waveform parameters or a target arc length signal is learned in the first welding stage and stored into a memory. An arc length feedback control or a current waveform control is performed under the control of program on the basis of the optimum welding current waveform parameters or the target arc length signal so as to control the faulty separation of globules when magnetic blow occurs and so as to reduce the variation of arc length due to external disturbances occurring at the welding torch so that improved welding quality is ensured under various environments.
摘要翻译： PCT No.PCT / JP90 / 00246 Sec。 371日期1991年3月27日 102（e）1991年3月27日PCT提交1990年2月27日PCT公布。公开号WO91 / 01842 日期：1991年2月21日。一种使用脉冲放电的脉冲焊接装置，例如脉冲电弧焊接装置和短路转移电弧焊接装置。控制脉冲电弧电流的脉冲电流波形控制电路被构造为使得最佳焊接操作可以是最佳焊接操作，该脉冲电流波形控制电路控制脉冲电弧电流，使得向焊接电源提供期望的脉冲电弧电流以向焊接负载单元输出脉冲电弧电流执行而不必调整电路组件并修改电路设计。脉冲电流波形控制电路是在程序下操作以提供期望的脉冲电弧电流的微计算机数字电路的形式。该程序的修改可以提供任何期望的脉冲电弧电流而不改变电路。在第一焊接阶段学习最佳焊接电流波形参数或目标电弧长度信号，并存储到存储器中。基于最佳焊接电流波形参数或目标电弧长度信号，在程序控制下执行电弧长度反馈控制或电流波形控制，以便在发生磁场发生时控制球的故障分离，从而减少由焊枪发生的外部干扰引起的电弧长度的变化，从而确保在各种环境下提高焊接质量。

10. 发明授权

US09960010B2 Signal processing method and signal processing apparatus 有权
公开(公告)号：US09960010B2
公开(公告)日：2018-05-01
申请号：US13601303
申请日：2012-08-31
申请人： Motoki Kadowaki , Osamu Nagano
发明人： Motoki Kadowaki , Osamu Nagano
IPC分类号： H01J37/26 , H01J37/22 , H01J37/28
CPC分类号： H01J37/261 , H01J37/222 , H01J37/28 , H01J2237/24465 , H01J2237/24485 , H01J2237/245 , H01J2237/2817
摘要： In accordance with an embodiment, a signal processing method includes scanning a pattern on a substrate with a charged particle beam, detecting secondary charged particles emitted from the substrate by using a detector, outputting a signal, and filtering the signal. The detector is separated or divided into a plurality of regions, and the secondary charged particles are detected separately in each region of the detector. Intensity of the filtering is defined in dependence on a function f(θ) of an angle θ between a reference axis and a direction along which the secondary charged particles enter a detector plane. The reference axis is an arbitrary direction in a plane parallel to a surface of the substrate.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式