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    • 1. 发明授权
    • Process for producing hydrophilic polymers
    • 生产亲水聚合物的方法
    • US4528340A
    • 1985-07-09
    • US645501
    • 1984-08-29
    • Osamu HayashiHideo KuriharaYukio Matsumoto
    • Osamu HayashiHideo KuriharaYukio Matsumoto
    • C08C19/06C08G59/16C08F8/32
    • C08C19/06C08G59/1455
    • A hydrophilic modified diene polymer material is produced by the steps of epoxidizing a diene polymer material consisting of at least one member selected from rubber polymers which have a molecular weight of 10,000 or more and contain an 85 molar % of more 1,4-addition structure based on the entire molar amount of double bonds contained therein, and crystalline 1,2-polybutadiene polymers which have a melting point of from 60.degree. C. to 170.degree. C., and a reduced viscosity (nsp/c) of 0.2 or more determined in a tetrahydronaphthalene solution in a concentration of 200 mg/100 ml at a temperature of 100.degree. C., and contain a 75 molar % or more 1,2-addition structure based on the entire molar amount of double bonds contained therein, for example, with a combination of a carboxylic acid and a peroxide compound, or a carboxylic peracid, to an extent such that the degree of epoxidization of the rubber polymers is in the range of from 5% to 60% and the degree of epoxidization of the crystalline 1,2-polybutadiene is in the range of from 5% to 45%; and ring-opening at least a portion of the epoxy rings in the resultant epoxidized polymeric material by heating it in the presence of a tertiary amine and a carboxylic acid.
    • 通过以下步骤制备亲水改性二烯聚合物材料:通过环氧化二烯聚合物材料的步骤,所述二烯聚合物材料由选自分子量为10,000以上且含有85摩尔%以上的1,4-加成结构的橡胶聚合物中的至少一种构成 基于其中所含的双重摩尔量的全部摩尔量,以及熔点为60℃至170℃的结晶1,2-聚丁二烯聚合物,并且具有0.2以上的比浓粘度(nsp / c) 在四氢化萘溶液中以200mg / 100ml的浓度在100℃下测定,并且基于其中所含的双重摩尔量的总摩尔量含有75摩尔%以上的1,2-加成结构,对于 例如,通过羧酸和过氧化物化合物或羧酸过酸的组合,使得橡胶聚合物的环氧化度在5%至60%的范围内,并且环氧化程度 结晶1 ,2-聚丁二烯在5%至45%的范围内; 并通过在叔胺和羧酸的存在下加热环氧化聚合物材料中的环氧环的至少一部分来开环。
    • 2. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US07154127B2
    • 2006-12-26
    • US11027945
    • 2005-01-04
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • H01L33/00
    • H01L33/38H01L33/42
    • A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.
    • 在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。 电流阻挡层部分地形成在其表面上。 在其整个表面上形成电流扩散电极。 在其上形成接合电极。 半导体层叠部分和电流扩散电极被分离成发光单元部分A,电极焊盘部分B和用于连接电极焊盘部分B和发光单元部分A之间或两个发光单元部分A之间的连接部分C 通过蚀刻去除发光单元部分A之间的半导体层叠部分,以除了连接部分C之外的间隙。接合电极形成在电极焊盘部分B上。
    • 3. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US07019323B2
    • 2006-03-28
    • US10690580
    • 2003-10-23
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • H01L29/06
    • H01L33/405Y10S257/918
    • A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.
    • 通过将具有发光层形成部分的半导体层叠部分经由金属层粘附到导电基板来形成半导体发光器件。 金属层至少具有用于与半导体层叠部分欧姆接触的第一金属层,由Ag制成的第二金属层和由金属制成的第三金属层,其允许在低温下粘附到导电基板。 结果,由于在金属层中存在Ag,来自金属层的光的反射率增加。 此外,金属层中的金属被禁止扩散到半导体层中,使得半导体层不吸收光。 因此,能够进一步提高半导体发光元件的亮度。
    • 4. 发明授权
    • Fuel injection control system
    • 燃油喷射控制系统
    • US6135090A
    • 2000-10-24
    • US213754
    • 1998-12-17
    • Katsuyoshi KawachiYukio MatsumotoKazumitsu Kobayashi
    • Katsuyoshi KawachiYukio MatsumotoKazumitsu Kobayashi
    • F02M37/00F02D1/02F02D41/38F02M59/20F02M59/36F02M37/04
    • F02D41/3809
    • A fuel injection control system for an internal combustion engine comprises a plurality of fuel injector valves, a pumping system having a suction valve, a discharge valve, and a high-pressure pump section sucking fuel into a pressurized chamber with the suction valve opened on a suction stroke and for discharging the fuel in the pressurized chamber toward the injector valves with the discharge valve opened on a discharge stroke. A relief passage is connected, at one end, to a lowpressure line upstream of the suction valve. The other end of the relief passage is connected to the pressurized chamber. A fuel-pressure control valve is disposed in the relief passage for regulating a fuel pressure of the fuel injected from each of the fuel injector valves by opening the fuel-pressure control valve only for a specified time duration from a controllable middle stage of the discharge stroke to the end of the discharge stroke.
    • 一种用于内燃机的燃料喷射控制系统包括多个燃料喷射阀,具有吸入阀,排出阀以及将燃料吸入加压室的高压泵部的泵送系统,其中吸入阀在一个 吸入行程,并且在排出阀在排出冲程打开时将压缩室中的燃料排出到喷射阀。 释放通道一端连接到吸入阀上游的低压线。 释放通道的另一端连接到加压室。 燃料压力控制阀设置在释放通道中,用于通过从放电的可控中间阶段仅打开燃料压力控制阀一段特定的持续时间来调节从每个燃料喷射阀喷射的燃料的燃料压力 行程到排放行程结束。
    • 10. 发明授权
    • Rice cooker-warmer
    • 电饭煲温暖
    • US4455480A
    • 1984-06-19
    • US354791
    • 1982-03-04
    • Yukio MatsumotoTerutaka AoshimaKatsuharu Matsuo
    • Yukio MatsumotoTerutaka AoshimaKatsuharu Matsuo
    • A47J27/00A47J27/62G05D23/24H05B1/02
    • A47J27/62G05D23/1912G05D23/24
    • The output of a first bridge circuit including as one component element a thermistor for detecting the temperature of a pan is compared with a preset value in a first operational amplifier. The first operational amplifier provides a low level output when the detected temperature is below a predetermined temperature. When this low level output is supplied to a second operational amplifier, the output thereof goes to a high level to turn on a transistor so as to energize a relay for passing current to a cooking heater. When a cooking end temperature is reached, the internal resistance of the thermistor is reduced, and as a result the output of the first operational amplifier goes to a high level, causing the output of the second operational amplifier to go to a low level. Thus, a warming heater is energized while the cooking heater is de-energized.
    • 在第一运算放大器中将包括用于检测锅的温度的热敏电阻作为一个组成元件的第一桥式电路的输出与预设值进行比较。 当检测到的温度低于预定温度时,第一运算放大器提供低电平输出。 当该低电平输出被提供给第二运算放大器时,其输出达到高电平以导通晶体管,以便为继电器通电以将电流传递到烹饪加热器。 当达到烹饪结束温度时,热敏电阻的内部电阻降低,结果,第一运算放大器的输出变为高电平,导致第二运算放大器的输出变为低电平。 因此,在烹饪加热器断电的同时加热加热器通电。