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    • 6. 发明申请
    • Magnetron Sputtering Source, Sputter-Coating Installation, and Method for Coating a Substrate
    • 磁控溅射源,溅射涂布安装以及涂覆基板的方法
    • US20080173535A1
    • 2008-07-24
    • US11904299
    • 2007-09-24
    • Joerg Krempel-Hesse
    • Joerg Krempel-Hesse
    • C23C14/35C23C14/56
    • H01J37/3408C23C14/3407C23C14/35H01J37/3423H01J37/3455
    • A magnetron sputter source for a sputter-coating installation includes a cathode and a target assigned to the cathode or formed as the cathode. The target provides coating and/or treatment material for the coating and/or treatment of a substrate. Furthermore, the magnetron sputtering source has means for generating a coating plasma and a magnet arrangement for generating a magnetic field for the purpose of influencing the coating plasma such that a plasma channel is generated above a partial section of a surface of the target. The magnet arrangement and the surface of the target are arranged such that they can be moved relative to each other, and the plasma channel is traversable above the surface of the target. The magnetron sputtering source is adjustable such that, when the plasma channel moves over the surface of the target, a duration of exposure of the surface to the plasma is reduced by an increase in a relative velocity (v, v+u) between the magnet arrangement and the target.
    • 用于溅射涂覆装置的磁控溅射源包括阴极和分配给阴极或形成为阴极的靶。 目标提供用于涂覆和/或处理基材的涂层和/或处理材料。 此外,磁控管溅射源具有用于产生涂覆等离子体的装置和用于产生磁场以用于影响涂覆等离子体的磁体装置,使得在目标的表面的部分部分之上产生等离子体通道。 磁体布置和靶的表面被布置成使得它们可以相对于彼此移动,并且等离子体通道在目标表面之上穿越。 磁控溅射源是可调节的,使得当等离子体通道在目标表面上移动时,通过磁体之间的相对速度(v,v + u)的增加来减小表面暴露于等离子体的持续时间 安排和目标。