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1. 发明申请

US20120211839A1 METHODS OF CHANNEL STRESS ENGINEERING AND STRUCTURES FORMED THEREBY 有权
标题翻译：通道应力工程方法及其形成结构
公开(公告)号：US20120211839A1
公开(公告)日：2012-08-23
申请号：US13458198
申请日：2012-04-27
申请人： Oleg Golonzka , Hemant Deshpande , Ajay K. Sharma , Cory Weber , Ashutosh Ashutosh
发明人： Oleg Golonzka , Hemant Deshpande , Ajay K. Sharma , Cory Weber , Ashutosh Ashutosh
IPC分类号： H01L27/092
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/32 , H01L29/7847
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a source/drain region in an NMOS portion of a substrate, wherein the source/drain region of the NMOS portion comprises at least one dislocation, and wherein a PMOS source/drain region in a PMOS portion of the substrate does not comprise a dislocation.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括在衬底的NMOS部分中形成源极/漏极区域，其中NMOS部分的源极/漏极区域包括至少一个位错，并且其中衬底的PMOS部分中的PMOS源极/漏极区域不包括错位。

2. 发明授权

US08716806B2 Methods of channel stress engineering and structures formed thereby 有权
标题翻译：通道应力工程及其结构的方法
公开(公告)号：US08716806B2
公开(公告)日：2014-05-06
申请号：US13458198
申请日：2012-04-27
申请人： Oleg Golonzka , Hemant Deshpande , Ajay K Sharma , Cory Weber , Ashutosh Ashutosh
发明人： Oleg Golonzka , Hemant Deshpande , Ajay K Sharma , Cory Weber , Ashutosh Ashutosh
IPC分类号： H01L21/70
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/32 , H01L29/7847
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a source/drain region in an NMOS portion of a substrate, wherein the source/drain region of the NMOS portion comprises at least one dislocation, and wherein a PMOS source/drain region in a PMOS portion of the substrate does not comprise a dislocation.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括在衬底的NMOS部分中形成源极/漏极区域，其中NMOS部分的源极/漏极区域包括至少一个位错，并且其中衬底的PMOS部分中的PMOS源极/漏极区域不包括错位。

3. 发明授权

US08193049B2 Methods of channel stress engineering and structures formed thereby 有权
标题翻译：通道应力工程及其结构的方法
公开(公告)号：US08193049B2
公开(公告)日：2012-06-05
申请号：US12316955
申请日：2008-12-17
申请人： Oleg Golonzka , Hemant Deshpande , Ajay K. Sharma , Cory Weber , Ashutosh Ashutosh
发明人： Oleg Golonzka , Hemant Deshpande , Ajay K. Sharma , Cory Weber , Ashutosh Ashutosh
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/32 , H01L29/7847
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a source/drain region in an NMOS portion of a substrate, wherein the source/drain region of the NMOS portion comprises at least one dislocation, and wherein a PMOS source/drain region in a PMOS portion of the substrate does not comprise a dislocation.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括在衬底的NMOS部分中形成源极/漏极区域，其中NMOS部分的源极/漏极区域包括至少一个位错，并且其中衬底的PMOS部分中的PMOS源极/漏极区域不包括错位。

4. 发明申请

US20100148270A1 Methods of channel stress engineering and structures formed thereby 有权
标题翻译：通道应力工程及其结构的方法
公开(公告)号：US20100148270A1
公开(公告)日：2010-06-17
申请号：US12316955
申请日：2008-12-17
申请人： Oleg Golonzka , Hemant Deshpande , Ajay K. Sharma , Cory Weber , Ashutosh Ashutosh
发明人： Oleg Golonzka , Hemant Deshpande , Ajay K. Sharma , Cory Weber , Ashutosh Ashutosh
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/32 , H01L29/7847
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a source/drain region in an NMOS portion of a substrate, wherein the source/drain region of the NMOS portion comprises at least one dislocation, and wherein a PMOS source/drain region in a PMOS portion of the substrate does not comprise a dislocation.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括在衬底的NMOS部分中形成源极/漏极区域，其中NMOS部分的源极/漏极区域包括至少一个位错，并且其中衬底的PMOS部分中的PMOS源极/漏极区域不包括错位。

5. 发明授权

US09858155B2 System and method for managing data with service level agreements that may specify non-uniform copying of data 有权
公开(公告)号：US09858155B2
公开(公告)日：2018-01-02
申请号：US12947385
申请日：2010-11-16
申请人： Ashutosh Ashutosh , David F. Chang , Madhav Mutalik
发明人： Ashutosh Ashutosh , David F. Chang , Madhav Mutalik
IPC分类号： G06F7/00 , G06F11/14 , G06F17/30
CPC分类号： G06F11/1453 , G06F11/1451 , G06F11/1461 , G06F17/30085 , G06F17/30088 , G06F17/30097 , G06F17/30159
摘要： Systems and methods are disclosed for a system for managing data in accordance with service level agreements (SLAs) that specify schedules on a calendar basis for performing prescribed data management functions and for reducing inter-function redundancy. This system may include a data management engine for performing data management functions, including at least a snapshot function, and at least one back-up function. The data management engine may include a service level policy engine that receives SLAs in electronic form and which controls the scheduling of the data management functions. Each electronic SLA may be associated with a corresponding application and may specify at least one service level policy, each policy specifying a source pool, a destination pool, a copy frequency, a retention period and schedule information. A collection of policies is capable of expressing a non-uniform schedule for when a given function should be performed.

6. 发明授权

US08060436B2 Software application domain and storage domain risk analysis process and method 有权
标题翻译：软件应用领域和存储域风险分析流程与方法
公开(公告)号：US08060436B2
公开(公告)日：2011-11-15
申请号：US10244686
申请日：2002-09-16
申请人： David Fu-Tien Chang , Ashutosh Ashutosh
发明人： David Fu-Tien Chang , Ashutosh Ashutosh
IPC分类号： G06Q40/00
CPC分类号： G06F11/323 , G06F3/0635 , G06F3/067 , G06Q40/00 , G06Q40/025 , G06Q40/04 , G06Q40/06 , G06Q40/08 , H04L41/046 , H04L41/06 , H04L41/0853 , H04L41/12 , H04L41/22 , H04L43/045 , H04L43/0888 , H04L67/1097 , H04L69/329
摘要： A method for analyzing management risk of a computer network includes selecting a portion of a storage system, determining a first downtime cost associated with a component included in the portion of the storage system, assigning the first downtime cost to the component, and disseminating the assigning of the downtime cost to a user.
摘要翻译：一种用于分析计算机网络的管理风险的方法包括选择存储系统的一部分，确定与所述存储系统的所述部分中包括的组件相关联的第一停机时间成本，将所述第一停机时间成本分配给所述组件，以及传播所述分配的用户的停机成本。

7. 发明申请

US20110147804A1 Drive current enhancement in tri-gate MOSFETS by introduction of compressive metal gate stress using ion implantation 审中-公开
标题翻译：通过使用离子注入引入压缩金属栅极应力来驱动三栅极MOSFET的电流增强
公开(公告)号：US20110147804A1
公开(公告)日：2011-06-23
申请号：US12646673
申请日：2009-12-23
申请人： Rishabh Mehandru , Cory E. Weber , Ashutosh Ashutosh , Jack Hwang
发明人： Rishabh Mehandru , Cory E. Weber , Ashutosh Ashutosh , Jack Hwang
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/7845 , H01L21/3215 , H01L29/66795 , H01L29/785
摘要： A semiconductor device comprises a fin and a metal gate film. The fin is formed on a surface of a semiconductor material. The metal gate film formed on the fin and comprises ions implanted in the metal gate film to form a compressive stress within the metal gate. In one exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and an orientation of the fin is along a direction with respect to the crystalline lattice of the semiconductor. In another exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and the orientation of the fin is along a direction with respect to the crystalline lattice of the semiconductor. The fin comprises an out-of-plane compression that is generated by the compressive stress within the metal gate film.
摘要翻译：半导体器件包括翅片和金属栅极膜。翅片形成在半导体材料的表面上。金属栅极膜形成在翅片上并且包括注入金属栅极膜中的离子，以在金属栅极内形成压应力。在一个示例性实施例中，半导体材料的表面包括（100）晶格取向，并且鳍的取向相对于半导体的晶格沿着<100>方向。在另一个示例性实施例中，半导体材料的表面包括（100）晶格取向，鳍的取向相对于半导体的晶格沿着<110>方向。翅片包括由金属栅膜内的压应力产生的平面外压缩。

8. 发明授权

US07842983B2 Boundaries with elevated deuterium levels 有权
标题翻译：氘浓度升高的边界
公开(公告)号：US07842983B2
公开(公告)日：2010-11-30
申请号：US12215250
申请日：2008-06-26
申请人： Ashutosh Ashutosh , Huicheng Chang , Adrien R. Lavoie , Aaron A. Budrevich
发明人： Ashutosh Ashutosh , Huicheng Chang , Adrien R. Lavoie , Aaron A. Budrevich
IPC分类号： H01L29/76
CPC分类号： H01L21/3003 , H01L21/26506 , H01L29/665
摘要： A device is annealed in a deuterium atmosphere. Deuterium penetrates the device to a boundary, which is passivated by the deuterium.
摘要翻译：器件在氘气氛中退火。氘渗透到边界，被氘钝化。

9. 发明申请

US20120286372A1 Reliability of high-K gate dielectric layers 有权
标题翻译：高K栅介质层的可靠性
公开(公告)号：US20120286372A1
公开(公告)日：2012-11-15
申请号：US11725521
申请日：2007-03-19
申请人： Adrien R. Lavoie , Aaron A. Budrevich , Ashutosh Ashutosh , Huicheng Chang
发明人： Adrien R. Lavoie , Aaron A. Budrevich , Ashutosh Ashutosh , Huicheng Chang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/3003 , H01L21/28176 , H01L21/28194 , H01L29/66545 , H01L29/66772
摘要： A method for improving the reliability of a high-k gate dielectric layer comprises incorporating a noble metal into a transistor gate stack that contains the high-k gate dielectric layer and annealing the transistor gate stack in a molecular hydrogen or deuterium containing atmosphere. The annealing process drives at least a portion of the molecular hydrogen or deuterium toward the high-k gate dielectric layer. When the molecular hydrogen or deuterium contacts the noble metal, it is converted into atomic hydrogen or deuterium that is able to treat the high-k gate dielectric layer and improve its reliability.
摘要翻译：一种用于提高高k栅极电介质层的可靠性的方法包括将贵金属掺入到包含高k栅极电介质层并在分子氢或含氘气氛中退火晶体管栅极叠层的晶体管栅极堆叠中。退火过程将至少一部分分子氢或氘驱向高k栅介质层。当分子氢或氘与贵金属接触时，它被转化为能够处理高k栅介质层并提高其可靠性的原子氢或氘。

10. 发明申请

US20120123999A1 SYSTEM AND METHOD FOR MANAGING DATA WITH SERVICE LEVEL AGREEMENTS THAT MAY SPECIFY NON-UNIFORM COPYING OF DATA 有权
标题翻译：用服务水平协议管理数据的系统和方法可以指定数据的非统一复制
公开(公告)号：US20120123999A1
公开(公告)日：2012-05-17
申请号：US12947385
申请日：2010-11-16
申请人： Ashutosh Ashutosh , David F. Chang , Madhav Mutalik
发明人： Ashutosh Ashutosh , David F. Chang , Madhav Mutalik
IPC分类号： G06F17/00
CPC分类号： G06F11/1453 , G06F11/1451 , G06F11/1461 , G06F17/30085 , G06F17/30088 , G06F17/30097 , G06F17/30159
摘要： Systems and methods are disclosed for a system for managing data in accordance with service level agreements (SLAs) that specify schedules on a calendar basis for performing prescribed data management functions and for reducing inter-function redundancy. This system may include a data management engine for performing data management functions, including at least a snapshot function, and at least one back-up function. The data management engine may include a service level policy engine that receives SLAs in electronic form and which controls the scheduling of the data management functions. Each electronic SLA may be associated with a corresponding application and may specify at least one service level policy, each policy specifying a source pool, a destination pool, a copy frequency, a retention period and schedule information. A collection of policies is capable of expressing a non-uniform schedule for when a given function should be performed.
摘要翻译：公开了用于根据服务级别协议（SLA）来管理数据的系统和方法，所述服务级别协议（SLA）指定日历上的日程表以执行规定的数据管理功能并且用于减少功能间冗余。该系统可以包括用于执行数据管理功能的数据管理引擎，至少包括快照功能和至少一个备份功能。数据管理引擎可以包括以电子形式接收SLA并且控制数据管理功能的调度的服务级策略引擎。每个电子SLA可以与相应的应用相关联，并且可以指定至少一个服务级别策略，每个策略指定源池，目的地池，复制频率，保留期和调度信息。一组策略能够表达一个不均匀的时间表，以便何时执行给定的功能。

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